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PCP1103 Ordering number : ENA1346 SANYO Semiconductors DATA SHEET PCP1103 PNP Epitaxial Planar Silicon Transistor DC / DC Converter Applications Applications • DC / DC converters, relay drivers, lamp drivers, motor drivers, IGBT gate drivers. Features • • • • • • Adoption of MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High speed switching. High allowable power dissipation. Halogen free compliance. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO -30 V Collector-to-Emitter Voltage VCEO -30 V Emitter-to-Base Voltage VEBO -5 V Collector Current IC -1.5 A Collector Current (Pulse) ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg -5 A -300 mA When mounted on ceramic substrate (450mm2×0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C -55 to +150 °C Marking : RF Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment (home appliances, AV equipment, communication device, office equipment, industrial equipment etc.). The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for applications outside the standard applications of our customer who is considering such use and/or outside the scope of our intended standard applications, please consult with us prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. www.semiconductor-sanyo.com/network N1208EA MS IM TC-00001718 No. A1346-1/4 PCP1103 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE= -2V, IC= -100mA VCE= -10V, IC= -300mA Base-to-Emitter Saturation Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-On Time Storage Time Fall Time -0.1 μA -0.1 μA 200 560 450 MHz 9 pF -250 -375 -0.85 -1.2 mV IC= -0.75A, IB= -15mA IC= -10μA, IE=0A IC= -1mA, RBE=∞ V(BR)EBO ton IE= -10μA, IC=0A See specified Test Circuit. tstg tf See specified Test Circuit. 115 ns See specified Test Circuit. 30 ns V -30 V -30 V -5 V 35 ns Switching Time Test Circuit unit : mm (typ) 7007A-004 IB1 PW=50μs D.C.≤1% Top View OUTPUT IB2 INPUT 4.5 RB 1.6 RL 50Ω + 820μF 4.0 1.0 2.5 1.5 2 Unit max V(BR)CBO V(BR)CEO Package Dimensions 1 typ VCB= -10V, f=1MHz IC= -0.75A, IB= -15mA VCE(sat) VBE(sat) Collector-to-Base Breakdown Voltage min VCB= -30V, IE=0A VEB= -4V, IC=0A fT Cob Output Capacitance Ratings Conditions VCC= --12V IC=--20IB1=20IB2=--0.75A 3 0.4 0.4 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP IC -- VCE A --50m A --40m A m --30 Collector Current, IC -- A --1.8 --1.6 --20mA --1.4 --1.2 --8mA --1.0 --10mA --6mA --4mA --0.8 --0.6 --2mA --0.4 VCE= --2V --1.4 --1.2 --1.0 --0.8 --0.6 --0.4 --0.2 --0.2 0 IC -- VBE --1.6 Collector Current, IC -- A --2.0 Ta=7 5°C 25°C --25°C Bot t om View IB=0mA 0 --0.1 --0.2 --0.3 --0.4 --0.5 --0.6 --0.7 --0.8 Collector-to-Emitter Voltage, VCE -- V --0.9 --1.0 IT14106 0 0 --0.2 --0.4 --0.6 --0.8 --1.0 Base-to-Emitter Voltage, VBE -- V --1.2 IT14107 No. A1346-2/4 PCP1103 hFE -- IC 7 VCE= --2V Gain-Bandwidth Product, f T -- MHz DC Current Gain, hFE Ta=75°C 25°C --25°C 2 100 7 5 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A 7 5 3 2 100 7 5 3 2 --0.01 3 2 3 5 7 --0.1 2 3 5 7 --1.0 2 IT01679 Collector Current, IC -- A VCE(sat) -- IC 5 f=1MHz 7 IC / IB=20 3 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 Output Capacitance, Cob -- pF 1000 IT14108 Cob -- VCB 100 VCE= --10V 2 5 3 f T -- IC 3 3 2 10 7 5 3 2 --0.1 °C 25 7 5 5°C 7 Ta= 3 5 --2 2 °C --0.01 2 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Base Voltage, VCB -- V 2 3 5 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A IT01681 VCE(sat) -- IC 2 7 --0.01 5 VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 5 3 2 C 25° 75°C Ta= C --25° 5 3 2 --0.01 --0.01 2 3 5 7 --0.1 2 3 5 7 --1.0 2 Collector Current, IC -- A ICP= --5A 1m C s n io at er op ) °C 25 a= (T 3 2 --0.1 7 5 Ta=25°C Single pulse When mounted on ceramic substrate (450mm2×0.8mm) 5 7--0.1 25°C 3 2 3 5 2 3 5 7--1.0 2 3 5 7 --10 Collector-to-Emitter Voltage, VCE -- V 2 3 7 --0.1 2 3 5 7 --1.0 Collector Current, IC -- A 2 3 IT14111 PC -- Ta When mounted on ceramic substrate (450mm2×0.8mm) 1.4 μs 100 s 0μ 0m m s s IC= --1.5A --0.01 --0.01 2 3 75°C 5 <10μs 10 10 --1.0 7 5 3 2 Ta=--25°C 7 1.6 50 3 2 --1.0 IT14110 ASO D Collector Current, IC -- A --10 7 5 2 2 --0.01 3 Collector Dissipation, PC -- W Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 7 7 3 IC / IB=50 IC / IB=50 --1.0 --0.1 2 IT14109 1.3 1.2 1.0 0.8 0.6 0.4 0.2 5 IT14112 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT14113 No. A1346-3/4 PCP1103 PC -- Tc 4.0 Collector Dissipation, PC -- W 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14114 SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of November, 2008. Specifications and information herein are subject to change without notice. PS No. A1346-4/4