Download Bip Transistor 20V 5A VCE(sat);500mV max. NPN Single TO-126ML

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Transcript
2SD1685
Ordering number : EN2042B
SANYO Semiconductors
DATA SHEET
2SD1685
NPN Epitaxial Planar Silicon Transistor
20V/5A Switching Applications
Applications
•
Strobe, voltage regulators, relay drivers, lamp drivers
Features
•
•
• Large current capacity
• Fast switching time
Low saturation voltage
No insulator required when mounting because the leadframe of the chip is covered with plastic
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Unit
60
V
20
V
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
Tc=25°C
A
W
10
W
150
°C
--55 to +150
°C
Product & Package Information
• Package
: TO-126ML
• JEITA, JEDEC
: TO-126
• Minimum Packing Quantity : 200 pcs./bag
2SD1685G
2SD1685F
3.6
3.3
1.0
Marking
Electrical Connection
2
11.0
D1685
3
RANK LOT No.
1.5
7.5
3.0
1.4
1.0
A
8
unit : mm (typ)
7516A-002
4.0
V
5
1.5
Package Dimensions
8.0
6
1
3.0
1.6
0.8
0.8
0.75
15.5
0.7
2
3
1.7
1
1 : Emitter
2 : Collector
3 : Base
2.4
4.8
SANYO : TO-126ML
http://www.sanyosemi.com/en/network/
90512 YKIM/21599TH (KT)/4277TA, TS No.2042-1/6
2SD1685
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Collector-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Turn-ON Time
Storage Time
Fall Time
min
typ
Unit
max
ICBO
IEBO
VCB=50V, IE=0A
VEB=5V, IC=0A
hFE1
VCE=2V, IC=500mA
hFE2
VCE=2V, IC=3A
fT
Cob
VCE=10V, IC=50mA
120
VCB=10V, f=1MHz
IC=3A, IB=60mA
45
VCE(sat)
VBE(sat)
Base-to-Emitter Saturation Voltage
Ratings
Conditions
120*
100
nA
100
nA
560*
95
MHz
pF
220
IC=3A, IB=60mA
500
mV
1.5
V
V(BR)CBO
V(BR)CEO
IC=10μA, IE=0A
60
V
IC=1mA, RBE=∞
20
V
V(BR)EBO
ton
IE=10μA, IC=0A
6
tstg
tf
See specified Test Circuit.
V
30
ns
300
ns
40
ns
* : The 2SD1685 is classified by 500mA hFE as follows :
Rank
hFE
E
120 to 200
F
160 to 320
G
280 to 560
Switching Time Test Circuit
IB1
PW=20μs
D.C.≤1%
OUTPUT
IB2
INPUT
VR
RB
RL
5Ω
50Ω
+
100μF
+
470μF
VBE= --5V
VCC=10V
IC=10IB1= --10IB2=2A
Ordering Information
Package
Shipping
2SD1685G
Device
TO-126ML
200pcs./bag
2SD1685F
TO-126ML
200pcs./bag
IC -- VCE
5
A
A
20mA
3
15mA
10mA
2
5mA
1
2
3
4
Collector-to-Emitter Voltage, VCE -- V
m
50
4
A
m
60
A
40m
30mA
3
20mA
15mA
2
10mA
5mA
1
IB=0mA
0
1
IC -- VCE
30mA
4
0
Pb Free
5
Collector Current, IC -- A
Collector Current, IC -- A
40m
memo
IB=0mA
0
5
ITR10012
0
0.2
0.4
0.6
0.8
1.0
Collector-to-Emitter Voltage, VCE -- V
ITR10013
No.2042-2/6
2SD1685
IC -- VBE
6
5
DC Current Gain, hFE
3
2
0
0.2
0.4
0.6
--25
°
1
C
Ta=
7
25° 5°C
C
Collector Current, IC -- A
4
0.8
1.0
5
3
2
100
7
5
3
2
2
3
5
7
2
100
3
5
Collector Current, IC -- mA
100
25°C
Ta=75°C
--25°C
2
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
2
Collector Current, IC -- A
Collector Current, IC -- A
10
7
5
3
5 7 10
ITR10018
ASO
2
ICP
DC
IC
3
DC
2
5 7 0.1
2
3
5 7 1.0
2
3
Cob -- VCB
5 7 10
ITR10015
f=1MHz
100
7
5
3
2
2
3
5
7
2
10
3
5
7 100
ITR10017
VBE(sat) -- IC
IC / IB=50
5
3
2
1.0
Ta= --25°C
7
5
25°C
75°C
3
2
0.1
5 7 0.01
2
3
5 7 0.1
2
3
5 7 1.0
Collector Current, IC -- A
2
3
5 7 10
ITR10019
1m
s
1
10 0ms
0m
s
op
era
tio
op
era
tio
1.0
3
Collector-to-Base Voltage, VCB -- V
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
2
3
2
7
3
5
5 7 0.01
10
5
7
3
10
1.0
7 1000
ITR10016
IC / IB=50
7
5
2
VCE(sat) -- IC
1000
7
Collector Current, IC -- A
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
7
10
--25°C
100
10
1.2
VCB=10V
10
2
ITR10014
f T -- IC
1000
25°C
Ta=75°C
3
2
Base-to-Emitter Voltage, VBE -- V
10
VCE=2V
7
5
0
hFE -- IC
1000
VCE=2V
nT
c=
25
°C
nT
a=
7
25
°C
5
3
2
0.1
7
5
Ta=25°C
Single pulse
2
3
5
7
1.0
2
3
5
7
10
2
3
Collector-to-Emitter Voltage, VCE -- V ITR10020
No.2042-3/6
2SD1685
Bag Packing Specification
2SD1685G, 2SD1685F
No.2042-4/6
2SD1685
Outline Drawing
2SD1685G, 2SD1685F
Mass (g) Unit
0.97
mm
* For reference
No.2042-5/6
2SD1685
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of September, 2012. Specifications and information herein are subject
to change without notice.
PS No.2042-6/6