Download Bip Transistor 25V 700mA VCE(sat);25mV(max.) NPN Single PCP

2SD1618
Ordering number : EN1784C
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistors
2SD1618
Low-Voltage High-Current Amplifier,
Muting Applications
Features
•
•
Low collector-to-emitter saturation voltage
Very small size making it easy to provide highdensity, small-sized hybrid IC’s
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
20
V
15
V
5
V
Collector Current
VEBO
IC
0.7
A
Collector Current (Pulse)
ICP
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
1.5
A
500
mW
1.3
W
150
°C
--55 to +150
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
1.6
1
2
0.4
Packing Type: TD
4.0
1.0
2.5
1.5
2SD1618S-TD-E
2SD1618T-TD-E
TD
Marking
LOT No.
4.5
DA
Top View
RANK
3
0.4
0.5
1.5
Electrical Connection
3.0
2
1
0.75
3
1 : Base
2 : Collector
3 : Emitter
Bottom View
SANYO : PCP
http://www.sanyosemi.com/en/network/
80812 TKIM/92098HA (KT)/4017KI/0216AT/2065MY, TS No.1784-1/6
2SD1618
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Conditions
ICBO
IEBO
VCB=15V, IE=0A
VEB=4V, IC=0A
hFE1
VCE=2V, IC=50mA
VCE=2V, IC=500mA
hFE2
Gain-Bandwidth Product
Ratings
min
typ
max
140*
Unit
0.1
μA
0.1
μA
560*
60
fT
VCE(sat)1
VCE=10V, IC=50mA
250
IC=5mA, IB=0.5mA
10
25
mV
VCE(sat)2
IC=100mA, IB=10mA
30
80
mV
VBE(sat)
V(BR)CBO
IC=100mA, IB=10mA
0.8
1.2
V
IC=10μA, IE=0A
20
V
IC=1mA, RBE=∞
15
V
Emitter-to-Base Breakdown Voltage
V(BR)CEO
V(BR)EBO
IE=10μA, IC=0A
5
Output Capacitance
Cob
VCB=10V, f=1MHz
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
MHz
V
8
pF
* : The 2SD1618 is classified by 50mA hFE as follows :
Rank
S
T
U
hFE
140 to 280
200 to 400
280 to 560
Ordering Information
Package
Shipping
2SD1618S-TD-E
Device
PCP
1,000pcs./reel
2SD1618T-TD-E
PCP
1,000pcs./reel
memo
Pb Free
No.1784-2/6
2SD1618
IC -- VCE
mA
6
80
4mA
600
Base Current, IB -- μA
Collector Current, IC -- mA
700
IB -- VBE
100
VCE=5V
50m
A
10
mA
800
500
2mA
400
1mA
300
200
60
40
20
100
IB=0
0
0
0.1
0.2
0.3
0
0.4
Collector-to-Emitter Voltage, VCE -- V
3
DC Current Gain, hFE
3
2
100
7
5
7
5
3
2
7
2
10
3
5
Collector Current, IC -- mA
10
1.0
7
100
ITR08843
Cob -- VCB
5
VCE=2V
100
2
5
2
3
5
2 3
10
5
100
2
3
5
1000 2 3 5
ITR08844
Collector Current, IC -- mA
VCE(sat) -- IC
10000
f=1MHz
IC / IB=10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
Output Capacitance, Cob -- pF
5
3
2
10
7
5
1.0
ITR08842
2
3
3
0.8
7
5
2
0.6
hFE -- IC
1000
5
10
1.0
0.4
Base-to-Emitter Voltage, VBE -- V
VCE=10V
7
0.2
ITR08841
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
0
0.5
3
2
1000
5
3
2
100
5
3
2
10
3
1.0
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
5
1.0
3
5
2
10
3
5
100
2
3
5
1000
ITR08846
ASO
5
Mounted on a ceramic board (250mm2✕0.8mm)
3
1.4
2
1.3
ou
Collector Current, IC -- A
M
1.2
nt
ed
1.0
on
ac
er
am
ic
0.8
bo
ar
No h
0.5
d(
25
0.6
m2
✕0
.8
eat s
0.4
0m
ink
m
1.0
7
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
s
5
DC
Ta op
=2 era
5° tio
C
n
3
2
0.1
Single pulse
3
20
0m
5
0
0
10
IC
7
m
)
0.2
ICP
s
1m ms
10
Collector Dissipation, PC -- W
3
Collector Current, IC -- mA
PC -- Ta
1.6
2
ITR08845
160
ITR08847
5
7
1.0
2
3
5
7
10
2
3
Collector-to-Emitter Voltage, VCE -- V
5
ITR08848
No.1784-3/6
2SD1618
Bag Packing Specification
2SD1618S-TD-E, 2SD1618T-TD-E
No.1784-4/6
2SD1618
Outline Drawing
2SD1618S-TD-E, 2SD1618T-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.1784-5/6
2SD1618
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This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No.1784-6/6