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2SC6096
Ordering number : ENA0434
SANYO Semiconductors
DATA SHEET
2SC6096
NPN Epitaxial Planar Silicon Transistor
High-Voltage Switching Applications
Applications
•
DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter.
Features
•
•
•
•
•
Adoption of FBET, MBIT process.
High current capacitance.
Low collector-to-emitter saturation voltage.
High-speed switching.
High allowable power dissipation.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
120
V
Collector-to-Emitter Voltage
VCES
120
V
Collector-to-Emitter Voltage
VCEO
100
V
Emitter-to-Base Voltage
VEBO
6.5
V
2
A
Collector Current
IC
Collector Current (Pulse)
ICP
Base Current
IB
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
3
400
A
mA
Mounted on a ceramic board (250mm2✕0.8mm)
1.3
W
Tc=25°C
3.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Marking : QG
Conditions
VCB=80V, IE=0A
VEB=4V, IC=0A
VCE=5V, IC=100mA
Ratings
min
typ
Unit
max
300
1
µA
1
µA
600
Continued on next page.
Any and all SANYO Semiconductor products described or contained herein do not have specifications
that can handle applications that require extremely high levels of reliability, such as life-support systems,
aircraft's control systems, or other applications whose failure can be reasonably expected to result in
serious physical and/or material damage. Consult with your SANYO Semiconductor representative
nearest you before usingany SANYO Semiconductor products described or contained herein in such
applications.
SANYO Semiconductor assumes no responsibility for equipment failures that result from using products
at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition
ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
products described or contained herein.
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
82306 / 62006EA MS IM TB-00002425 No. A0434-1/4
2SC6096
Continued from preceding page.
Parameter
Symbol
Gain-Bandwidth Product
fT
Cob
Output Capacitance
Collector-to-Emitter Saturation Voltage
VCE(sat)
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
VBE(sat)
V(BR)CBO
Collector-to-Emitter Breakdown Voltage
V(BR)CES
Collector-to-Emitter Breakdown Voltage
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
Turn-ON Time
Fall Time
min
typ
Unit
max
VCE=10V, IC=300mA
VCB=10V, f=1MHz
300
MHz
IC=1A, IB=100mA
IC=1A, IB=100mA
100
150
mV
0.85
1.2
V
13
IC=10µA, IE=0A
IC=100µA, RBE=0Ω
IC=1mA, RBE=∞
IE=10µA, IC=0A
ton
tstg
tf
Storage Time
Ratings
Conditions
pF
120
V
120
V
100
V
6.5
V
See specified Test Circuit.
40
See specified Test Circuit.
1100
ns
See specified Test Circuit.
40
ns
Package Dimensions
ns
Switching Time Test Circuit
unit : mm
7007A-004
IB1
PW=20µs
D.C.≤1%
Top View
OUTPUT
IB2
4.5
1.6
1.5
INPUT
VR10
RB
RL
1
2
+
100µF
4.0
1.0
2.5
50Ω
+
470µF
VCC=50V
VBE= --5V
3
0.4
0.4
10IB1= --10IB2=IC=0.5A
0.5
1.5
3.0
0.75
1 : Base
2 : Collector
3 : Emitter
SANYO : PCP
IC -- VCE
60mA
100
1.6
40mA
1.4
1.2
20mA
1.0
10mA
0.8
5mA
0.6
2mA
0.4
VCE=5V
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
25°C
mA
80mA
Collector Current, IC -- A
Collector Current, IC -- A
1.8
IC -- VBE
2.0
--25°C
2.0
Ta=75
°C
Bottom View
0.2
IB=0mA
0
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
Collector-to-Emitter Voltage, VCE -- V
0.9
1.0
IT11115
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
1.2
IT11116
No. A0434-2/4
2SC6096
hFE -- IC
1000
7
Gain-Bandwidth Product, f T -- MHz
Ta=75°C
DC Current Gain, hFE
5
25°C
--25°C
3
2
100
7
5
3
2
0.01
2
3
5
7
2
0.1
3
5
7
2
1.0
Collector Current, IC -- A
2
100
7
5
3
2
3
5
7
2
0.1
3
5
7
Collector Current, IC -- A
IC / IB=10
2
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
5
3
2
10
7
5
2
1.0
IT11118
VCE(sat) -- IC
3
7
Output Capacitance, Cob -- pF
3
IT11117
f=1MHz
0.1
7
5
75
Ta=
3
2
25°
0.01
°C
5°C
--2
C
7
5
3
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
3
0.01
5 7 100
IT11119
Collector-to-Base Voltage, VCB -- V
5
7 0.1
2
Collector Current, IC -- A
3
5
7 1.0
2
Collector Current, IC -- A
3
2
0.1
7
5
3
3
<10µs
s
Tc=25°C
Single Pulse
0.01
0.1
2
3
5 7 1.0
2
3
5 7 10
2
3
5 7 100
2
IT11122
Collector-to-Emitter Voltage, VCE -- V
IT11121
PC -- Ta
1.4
2
IT11120
)
3
7 1.0
µs
1.0
7
5
3
2
5
m
IC=2A
2
3
0.01
3
100
25°C
5
2
s
m
0µ
8m
50
s
0.
2✕
1m
s
C)
m
5°
m
0m
=2
50
10
(2
Tc
) rd
n(
io
°C oa
at
25 c b
er
a= i
op
(T am
C
n er
D
io a c
at
er on
op ted
C
D oun
M
75°C
7 0.1
10
2
2
7
5
ICP=3A
3
Ta= --25°C
3
ASO
5
IC / IB=10
1.0
2
Collector Current, IC -- A
VBE(sat) -- IC
3
Base-to-Emitter
Saturation Voltage, VBE(sat) -- V
VCE=10V
5
2
0.01
3
Cob -- VCB
100
f T -- IC
7
VCE=5V
PC -- Tc
4.0
1.3
3.5
M
Collector Dissipation, PC -- W
Collector Dissipation, PC -- W
1.2
ou
nt
ed
1.0
on
ac
er
0.8
am
ic
bo
ar
d
0.6
(2
50
m
m2
✕
0.4
0.
0.2
8m
m
)
3.0
2.5
2.0
1.5
1.0
0.5
0
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
IT11123
0
20
40
60
80
100
120
Case Temperature, Tc -- °C
140
160
IT11124
No. A0434-3/4
2SC6096
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the performance, characteristics, and functions of the described products in the independent state,
and are not guarantees of the performance, characteristics, and functions of the described products
as mounted in the customer's products or equipment. To verify symptoms and states that cannot be
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This catalog provides information as of June, 2006. Specifications and information herein are subject
to change without notice.
PS No. A0434-4/4