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2SC6096 Ordering number : ENA0434 SANYO Semiconductors DATA SHEET 2SC6096 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • DC / DC converter, relay drivers, lamp drivers, motor drivers, inverter. Features • • • • • Adoption of FBET, MBIT process. High current capacitance. Low collector-to-emitter saturation voltage. High-speed switching. High allowable power dissipation. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Conditions Ratings Unit Collector-to-Base Voltage VCBO 120 V Collector-to-Emitter Voltage VCES 120 V Collector-to-Emitter Voltage VCEO 100 V Emitter-to-Base Voltage VEBO 6.5 V 2 A Collector Current IC Collector Current (Pulse) ICP Base Current IB Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg 3 400 A mA Mounted on a ceramic board (250mm2✕0.8mm) 1.3 W Tc=25°C 3.5 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO Emitter Cutoff Current IEBO DC Current Gain hFE Marking : QG Conditions VCB=80V, IE=0A VEB=4V, IC=0A VCE=5V, IC=100mA Ratings min typ Unit max 300 1 µA 1 µA 600 Continued on next page. Any and all SANYO Semiconductor products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO Semiconductor representative nearest you before usingany SANYO Semiconductor products described or contained herein in such applications. SANYO Semiconductor assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor products described or contained herein. TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 82306 / 62006EA MS IM TB-00002425 No. A0434-1/4 2SC6096 Continued from preceding page. Parameter Symbol Gain-Bandwidth Product fT Cob Output Capacitance Collector-to-Emitter Saturation Voltage VCE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage VBE(sat) V(BR)CBO Collector-to-Emitter Breakdown Voltage V(BR)CES Collector-to-Emitter Breakdown Voltage V(BR)CEO Emitter-to-Base Breakdown Voltage V(BR)EBO Turn-ON Time Fall Time min typ Unit max VCE=10V, IC=300mA VCB=10V, f=1MHz 300 MHz IC=1A, IB=100mA IC=1A, IB=100mA 100 150 mV 0.85 1.2 V 13 IC=10µA, IE=0A IC=100µA, RBE=0Ω IC=1mA, RBE=∞ IE=10µA, IC=0A ton tstg tf Storage Time Ratings Conditions pF 120 V 120 V 100 V 6.5 V See specified Test Circuit. 40 See specified Test Circuit. 1100 ns See specified Test Circuit. 40 ns Package Dimensions ns Switching Time Test Circuit unit : mm 7007A-004 IB1 PW=20µs D.C.≤1% Top View OUTPUT IB2 4.5 1.6 1.5 INPUT VR10 RB RL 1 2 + 100µF 4.0 1.0 2.5 50Ω + 470µF VCC=50V VBE= --5V 3 0.4 0.4 10IB1= --10IB2=IC=0.5A 0.5 1.5 3.0 0.75 1 : Base 2 : Collector 3 : Emitter SANYO : PCP IC -- VCE 60mA 100 1.6 40mA 1.4 1.2 20mA 1.0 10mA 0.8 5mA 0.6 2mA 0.4 VCE=5V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 25°C mA 80mA Collector Current, IC -- A Collector Current, IC -- A 1.8 IC -- VBE 2.0 --25°C 2.0 Ta=75 °C Bottom View 0.2 IB=0mA 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 Collector-to-Emitter Voltage, VCE -- V 0.9 1.0 IT11115 0 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 1.2 IT11116 No. A0434-2/4 2SC6096 hFE -- IC 1000 7 Gain-Bandwidth Product, f T -- MHz Ta=75°C DC Current Gain, hFE 5 25°C --25°C 3 2 100 7 5 3 2 0.01 2 3 5 7 2 0.1 3 5 7 2 1.0 Collector Current, IC -- A 2 100 7 5 3 2 3 5 7 2 0.1 3 5 7 Collector Current, IC -- A IC / IB=10 2 Collector-to-Emitter Saturation Voltage, VCE(sat) -- V 5 3 2 10 7 5 2 1.0 IT11118 VCE(sat) -- IC 3 7 Output Capacitance, Cob -- pF 3 IT11117 f=1MHz 0.1 7 5 75 Ta= 3 2 25° 0.01 °C 5°C --2 C 7 5 3 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 3 0.01 5 7 100 IT11119 Collector-to-Base Voltage, VCB -- V 5 7 0.1 2 Collector Current, IC -- A 3 5 7 1.0 2 Collector Current, IC -- A 3 2 0.1 7 5 3 3 <10µs s Tc=25°C Single Pulse 0.01 0.1 2 3 5 7 1.0 2 3 5 7 10 2 3 5 7 100 2 IT11122 Collector-to-Emitter Voltage, VCE -- V IT11121 PC -- Ta 1.4 2 IT11120 ) 3 7 1.0 µs 1.0 7 5 3 2 5 m IC=2A 2 3 0.01 3 100 25°C 5 2 s m 0µ 8m 50 s 0. 2✕ 1m s C) m 5° m 0m =2 50 10 (2 Tc ) rd n( io °C oa at 25 c b er a= i op (T am C n er D io a c at er on op ted C D oun M 75°C 7 0.1 10 2 2 7 5 ICP=3A 3 Ta= --25°C 3 ASO 5 IC / IB=10 1.0 2 Collector Current, IC -- A VBE(sat) -- IC 3 Base-to-Emitter Saturation Voltage, VBE(sat) -- V VCE=10V 5 2 0.01 3 Cob -- VCB 100 f T -- IC 7 VCE=5V PC -- Tc 4.0 1.3 3.5 M Collector Dissipation, PC -- W Collector Dissipation, PC -- W 1.2 ou nt ed 1.0 on ac er 0.8 am ic bo ar d 0.6 (2 50 m m2 ✕ 0.4 0. 0.2 8m m ) 3.0 2.5 2.0 1.5 1.0 0.5 0 0 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 IT11123 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT11124 No. A0434-3/4 2SC6096 Specifications of any and all SANYO Semiconductor products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Semiconductor Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor products (including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Semiconductor Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. SANYO Semiconductor believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of June, 2006. Specifications and information herein are subject to change without notice. PS No. A0434-4/4