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2SC4134 Ordering number : EN2510B SANYO Semiconductors DATA SHEET 2SC4134 NPN Epitaxial Planar Silicon Transistor High-Voltage Switching Applications Applications • Power supplies, relay drivers, lamp drivers Features • • • • High breakdown voltage and large current capacity Adoption FBET, MBIT processes Fast switching speed Small and slim package permitting 2SC4134-applied sets to be made more compact Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage VEBO IC ICP Collector Current Collector Current (Pulse) Unit 120 V 100 V 6 V 1 A 2 A Continued on next page. Package Dimensions unit : mm (typ) Package Dimensions unit : mm (typ) 7518-003 7003-003 0.5 0.6 1 2 2.3 0.5 3 2.3 2.5 0.8 1 7.5 0.8 1.6 0.85 1.2 2 3 0 to 0.2 0.6 1 : Base 2 : Collector 3 : Emitter 4 : Collector 1.2 0.85 0.7 2SC4134S-TL-E 2SC4134T-TL-E 0.5 1.5 4 5.5 5.5 4 2.3 6.5 5.0 2SC4134S-E 2SC4134T-E 7.0 1.5 0.5 7.0 2.3 6.5 5.0 1.2 2.3 2.3 1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA SANYO : TP Product & Package Information • Package : TP • JEITA, JEDEC : SC-64, TO-251 • Minimum Packing Quantity : 500 pcs./bag Marking (TP, TP-FA) • Package : TP-FA • JEITA, JEDEC : SC-63, TO-252 • Minimum Packing Quantity : 700 pcs./reel Packing Type (TP-FA) : TL Electrical Connection 2,4 C4134 RANK 1 LOT No. TL 3 http://www.sanyosemi.com/en/network/ 80812 TKIM/N1003TN (KT)/72098HA (KT)/8219MO/4097TA, TS No.2510-1/9 2SC4134 Continued from preceding page. Parameter Symbol Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Conditions Ratings Tc=25°C Unit 0.8 W 10 W 150 °C --55 to +150 °C Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current ICBO IEBO hFE Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Collector-to-Emitter Saturation Voltage VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage V(BR)CBO V(BR)CEO Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage V(BR)EBO ton Turn-ON Time Storage Time tstg tf Fall Time Ratings min typ max Unit VCB=100V, IE=0A 100 nA VEB=4V, IC=0A 100 nA VCE=5V, IC=100mA fT Cob Output Capacitance Conditions 100* 400* VCE=10V, IC=100mA 120 VCB=10V, f=1MHz IC=400mA, IB=40mA 8.5 IC=400mA, IB=40mA IC=10μA, IE=0A IC=1mA, RBE=∞ IE=10μA, IC=0A pF 0.1 0.4 V 0.85 1.2 V 120 V 100 V 6 V 80 See specified Test Circuit. MHz ns 850 ns 50 ns * : The 2SC4134 is classified by 100mA hFE as follows : Rank R S T hFE 100 to 200 140 to 280 200 to 400 Switching Time Test Circuit IB1 IB2 OUTPUT INPUT PW=20μs DC≤1% RB VR + 50Ω 100μF --5V RL + 470μF 50V IC=10IB1= --10IB2=400mA Ordering Information Device 2SC4134S-E 2SC4134T-E Package Shipping TP 500pcs./bag TP 500pcs./bag 2SC4134S-TL-E TP-FA 700pcs./reel 2SC4134T-TL-E TP-FA 700pcs./reel memo Pb Free No.2510-2/9 2SC4134 IC -- VCE 2.5 mA 20mA 15mA A 30m A 25m 0.8 10mA 0.6 5mA 0.4 3mA 2mA 1mA 0.2 IB=0 0 0 1 2 3 1.0mA 200 0.5mA 100 IB=0 0 10 IC -- VBE 30 40 50 ITR03998 hFE -- IC 1000 VCE=5V VCE=5V 7 5 DC Current Gain, hFE 0.8 0.6 0.4 0.2 3 Ta=75°C 2 --25°C 25°C 100 7 5 3 2 0 10 0 0.2 0.4 0.6 0.8 1.0 Base-to-Emitter Voltage, VBE -- V 7 0.01 1.2 5 3 2 25°C Ta=--25°C 75°C 5 3 5 7 2 0.1 3 5 Collector Current, IC -- A 7 2 1.0 ITR04004 2 3 5 7 1.0 3 IC / IB=10 5 3 2 100 7 Ta=75°C 5 25 °C --25°C 2 3 5 7 0.1 2 3 5 7 1.0 2 ITR04006 Cob -- VCB 100 VCE=10V 2 ITR04002 Collector Current, IC -- A f T -- IC 3 0.1 7 2 7 0.01 3 2 7 VCE(sat) -- IC 3 7 0.01 5 1000 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 7 7 3 Collector Current, IC -- A IC / IB=10 1.0 2 ITR04000 VBE(sat) -- IC 10 f=1kHz 7 2 Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 20 Collector-to-Emitter Voltage, VCE -- V ITR03996 Ta=7 5°C 25°C --25°C Collector Current, IC -- A 1.5mA 300 5 1.0 Base-to-Emitter Saturation Voltage, VBE(sat) -- V 2.0mA 400 0 4 Collector-to-Emitter Voltage, VCE -- V 1.2 IC -- VCE 500 Collector Current, IC -- mA Collector Current, IC -- A 1.0 100 7 5 3 2 5 3 2 10 7 5 3 10 2 7 0.01 2 3 5 7 0.1 2 Collector Current, IC -- A 3 5 7 1.0 ITR04007 7 1.0 2 3 5 7 10 2 3 5 7 Collector-to-Base Voltage, VCB -- V 2 100 ITR04008 No.2510-3/9 2SC4134 ASO ICP=2.0A 1 10 ms m s IC=1.0A 1.0 7 5 op tio 5°C =2 era n 0.1 7 5 ms 2 100 DC 3 Tc Collector Current, IC -- A 2 Ta = 25 °C 3 2 Ta=25°C Single Pulse 0.01 7 5 5 7 1.0 2 PC -- Ta 12 Collector Dissipation, PC -- W 3 10 8 6 4 2 No heat sink 0.8 0 3 5 7 10 2 3 5 7 100 2 ITR04009 Collector-to-Emitter Voltage, VCE -- V 0 20 40 60 80 100 120 Ambient Temperature, Ta -- °C 140 160 ITR04010 No.2510-4/9 2SC4134 Taping Specification 2SC4134S-TL-E, 2SC4134T-TL-E No.2510-5/9 2SC4134 Outline Drawing 2SC4134S-TL-E, 2SC4134T-TL-E Land Pattern Example Mass (g) Unit 0.282 mm Unit: mm * For reference 7.0 7.0 2.5 2.0 1.5 2.3 2.3 No.2510-6/9 2SC4134 Bag Packing Specification 2SC4134S-E, 2SC4134T-E No.2510-7/9 2SC4134 Outline Drawing 2SC4134S-E, 2SC4134T-E Mass (g) Unit 0.315 mm * For reference No.2510-8/9 2SC4134 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of August, 2012. Specifications and information herein are subject to change without notice. PS No.2510-9/9