Download Bipolar Transistors 20V 5A VCE(sat)500mV max. NPN Single PCP

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Transcript
2SD1628
Ordering number : EN1781B
SANYO Semiconductors
DATA SHEET
2SD1628
NPN Epitaxial Planar Silicon Transistor
High-Current Switching Applications
Applications
Strobe DC-DC converters, relay drivers, hammer drivers, lamp drivers, motor drovers
•
Features
• High hFE
Low saturation voltage
Large current capacity
Very small size making it easy to provide highdensity, small-sized hybrid IC’s
Halogen free compliance
•
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Conditions
Ratings
Unit
VCBO
VCEO
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
60
V
20
V
VEBO
IC
ICP
Collector Current
Collector Current (Pulse)
6
V
5
A
8
A
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
1.6
2.5
1.0
1
2
0.4
Packing Type: TD
4.0
1.5
2SD1628G-TD-E
2SD1628G-TD-H
2SD1628F-TD-E
2SD1628F-TD-H
TD
Marking
LOT No.
4.5
DK
Top View
RANK
3
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
SANYO : PCP
http://www.sanyosemi.com/en/network/
82212 TKIM/21599TH (KT)/5277KI/3045MW, TS No.1781-1/6
2SD1628
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
500
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
mW
1.5
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE1
Emitter Cutoff Current
DC Current Gain
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Storage Time
ton
tstg
Fall Time
tf
Unit
max
100
nA
VEB=5V, IC=0A
100
nA
120*
560*
95
120
VCB=10V, f=1MHz
IC=3A, IB=60mA
VCE(sat)
VBE(sat)
Turn-ON Time
typ
VCB=50V, IE=0A
VCE=2V, IC=3A
VCE=10V, IC=50mA
fT
Cob
Output Capacitance
min
VCE=2V, IC=0.5A
hFE2
Gain-Bandwidth Product
Ratings
Conditions
MHz
45
pF
500
IC=3A, IB=60mA
mV
1.5
V
30
See specified Test Circuit.
ns
300
ns
40
ns
* : The 2SD1628 is classified by 0.5A hFE as follows :
Rank
hFE
E
120 to 200
F
160 to 320
G
280 to 560
Switching Time Test Circuit
IB1
PW=10μs
D.C.=2%
tr, tf ≤ 7ms
OUTPUT
IB2
INPUT
1Ω
200VR
5Ω
1μF+
1μF
+
50Ω
VBE= --5V
VCC=10V
IC=10IB1= --10IB2=2A
Ordering Information
Package
Shipping
memo
2SD1628G-TD-E
Device
PCP
1,000pcs./reel
Pb Free
2SD1628G-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
2SD1628F-TD-E
PCP
1,000pcs./reel
Pb Free
2SD1628F-TD-H
PCP
1,000pcs./reel
Pb Free and Halogen Free
IC -- VCE
30mA
20mA
15mA
3
10mA
2
pulse
8mA
10
A
40m
Collector Current, IC -- A
4
60
IC -- VCE
2.0
mA
mA
mA 80m
A
pulse
100
Collector Current, IC -- A
5
5mA
1
1.6
6mA
1.2
4mA
0.8
2mA
0.4
IB=0
0
0
0.2
0.4
0.6
IB=0
0
0.8
Collector-to-Emitter Current, VCE -- V
1.0
ITR10003
0
0.4
0.8
1.2
1.6
2.0
Collector-to-Emitter Voltage, VCE -- V
ITR10004
No.1781-2/6
2SD1628
IC -- VBE
5
hFE -- IC
1000
VCE=2V
pulse
VCE=2V
pulse
7
DC Current Gain, hFE
Collector Current, IC -- A
5
4
3
2
3
2
100
7
5
3
1
2
0
10
0
0.4
0.8
1.2
1.6
2.0
Base-to-Emitter Voltage, VBE -- V
3
5
2
100
3
5
2
1000
Output Capacitance, Cob -- pF
5
3
2
100
7
5
3
5
f=1MHz
pulse
VCE=10V
pulse
7
3
ITR10006
Cob -- VCB
2
100
7
5
3
2
2
10
2
10
3
5
7
2
100
3
5
Collector Current, IC -- mA
10
1.0
7
1000
ITR10007
3
5
7
2
10
3
7 100
ITR10008
Collector Dissipation, PC -- W
1.6
1.0
7
5
3
2
0.1
7
M
1.4
ou
nt
1.2
ed
on
ac
er
1.0
am
ic
bo
ar
0.8
d(
25
0.6
No h
0m
m2
✕0
.8
eat s
0.4
ink
m
m
)
0.2
5
3
0.1
5
PC -- Ta
1.8
IC / IB=50
pulse
2
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- V
2
Collector Current, IC -- mA
f T -- IC
1000
Gain-Bandwidth Product, f T -- MHz
10
ITR10005
0
2
3
5
7
2
1.0
3
5
Collector Current, IC -- A
7
10
ITR10009
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR10010
ASO
10
7
Collector Current, IC -- A
ICP
IC
3
10
0m
s
s
1m s
m
10
5
2
DC
op
era
1.0
tio
7
n
5
3
2
0.1
7
Single pulse
Mounted on a ceramic board (250mm2✕0.8mm)
5
3
2
3
5
7
1.0
2
3
5
7
10
2
3
Collector-to-Emitter Voltage, VCE -- V ITR10011
No.1781-3/6
2SD1628
Bag Packing Specification
2SD1628G-TD-E, 2SD1628G-TD-H, 2SD1628F-TD-E, 2SD1628F-TD-H
No.1781-4/6
2SD1628
Outline Drawing
Land Pattern Example
2SD1628G-TD-E, 2SD1628G-TD-H, 2SD1628F-TD-E, 2SD1628F-TD-H
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.1781-5/6
2SD1628
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
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solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
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semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
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are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
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No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
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Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of August, 2012. Specifications and information herein are subject
to change without notice.
PS No.1781-6/6