Download Bip Transistor 50V 10A VCE(sat);360mV NPN Single TO-220F-3FS

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Transcript
2SD1012
Ordering number : EN0676F
SANYO Semiconductors
DATA SHEET
NPN Epitaxial Planar Silicon Transistor
2SD1012
Low-Voltage Large-Current
Amplifier Applications
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Collector Current (Pulse)
Collector Dissipation
Conditions
Ratings
Unit
VCBO
VCEO
20
V
15
V
VEBO
IC
5
V
0.7
A
ICP
PC
1.5
A
250
mW
Junction Temperature
Tj
Storage Temperature
Tstg
125
°C
--55 to +125
°C
Package Dimensions
Product & Package Information
unit : mm (typ)
7524-004
• Package
: SPA
• JEITA, JEDEC
: SC-72
• Minimum Packing Quantity : 2,500 pcs./box, 500pcs./bag
2SD1012G-SPA
2SD1012G-SPA-AC
2SD1012F-SPA
2SD1012F-SPA-AC
2.2
Marking
0.4
0.5
LOT No.
0.6
15.0
2
0.7
0.7
3.0
3.8
0.4
1
3
1.3
1.3
2
3
0.4
1
Electrical Connection
D1012
Rank
1.8
3.0
4.0
1 : Emitter
2 : Collector
3 : Base
SANYO : SPA
http://www.sanyosemi.com/en/network/
O2412 TKIM/91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No.676-1/10
2SD1012
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
Conditions
ICBO
IEBO
VCB=15V, IE=0A
VEB=4V, IC=0A
hFE1
VCE=2V, IC=50mA
VCE=2V, IC=500mA Pulse
hFE2
Gain-Bandwidth Product
fT
Cob
Common Base Output Capacitance
Collector-to-Emitter Saturation Voltage
Base-to-Emitter Saturation Voltage
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
Emitter-to-Base Breakdown Voltage
Ratings
min
typ
max
160*
Unit
1.0
μA
1.0
μA
960*
80
VCE=10V, IC=50mA
250
8
VCE(sat)1
VCB=10V, f=1MHz
IC=5mA, IB=0.5mA
VCE(sat)2
IC=100mA, IB=10mA
VBE(sat)
V(BR)CBO
IC=100mA, IB=10mA
IC=10μA, IE=0A
20
V
V(BR)CEO
V(BR)EBO
IC=1mA, RBE=∞
15
V
IE=10μA, IC=0A
5
V
10
MHz
pF
25
mV
30
80
mV
0.8
1.2
V
* : The 2SD1012 is classified by 50mA hFE as follows :
Rank
hFE
F
160 to 320
G
280 to 560
H
480 to 960
Ordering Information
Device
2SD1012G-SPA
2SD1012G-SPA-AC
2SD1012F-SPA
2SD1012F-SPA-AC
Package
Shipping
SPA
500pcs./bag
SPA-WA
2,500pcs./box
SPA
500pcs./bag
SPA-WA
2,500pcs./box
memo
Pb Free
No.676-2/10
2SD1012
IC -- VCE
6m
600
IB -- VBE
100
A
VCE=5V
80
Base Current, IB -- μA
50m
A
Collector Current, IC -- mA
700
10
mA
800
4mA
500
2mA
400
300
1mA
200
60
40
20
100
0
IB=0mA
0
0.1
0.2
0.3
0.4
Collector-to-Emitter Voltage, VCE -- V
3
DC Current Gain, hFE
Gain-Bandwidth Product, f T -- MHz
3
2
100
7
5
2
3
5
Collector Current, IC -- mA
10
1.0
7
100
ITR08386
Cob -- VCB
5
VCE=2V
5
2
10
hFE -- IC
7
3
7
2 3
5
10
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
2
10
7
5
2 3
5
100
2 3
5
1000
Collector Current, IC -- mA
2 3
5
ITR08387
VCE(sat) -- IC
10000
f=1MHz
1.0
ITR08385
100
2
5
0.8
2
3
3
0.6
7
5
2
0.4
1000
5
10
1.0
0.2
Base-to-Emitter Voltage, VBE -- V
VCE=10V
7
0
ITR08384
f T -- IC
1000
Output Capacitance, Cob -- pF
0
0.5
IC / IB=10
5
3
2
1000
5
3
2
100
5
3
2
10
3
1.0
2
3
5
7
2
10
Collector-to-Base Voltage, VCB -- V
Collector Current, IC -- A
10
m
10
IC=0.7A
7
0m
s
s
5
3
DC
2
op
era
tio
0.1
7
n
5
3
2
2
3
5
7
1.0
2
3
5
10
5
7
10
Collector-to-Emitter Voltage, VCE -- V
2
3
ITR08390
2
3
5
100
2
PC -- Ta
320
ICP=1.5A
1.0
3
Collector Current, IC -- mA
Collector Dissipation, PC -- mW
2
2
ITR08388
ASO
3
0.01
5
1.0
3
3
5
1000
ITR08389
280
240
200
160
120
80
40
0
0
20
40
60
80
100
Ambient Temperature, Ta -- °C
120
140
ITR09908
No.676-3/10
2SD1012
PO -- VIN
100
7
5
3
2
10
7
VCC=3V
RL=8Ω
f=1kHz
5
5
7
2
1.0
3
5
7
VCC=3V
RL=8Ω
0dB : 44.7dB / 1kHz
0
Response -- dB
5
3
2
10
7
5
3
2
3
5
7
--2
--4
--6
--8
10
2
3
5
7
100
Output Power, PO -- mW
ITR08391
f response
2
VCC=3V
RL=8Ω
f=1kHz
7
1.0
2
10
Input Voltage, VIN -- mV
4
Total Harmonic Distortion, THD -- %
Output Power, PO -- mW
2
3
THD -- PO
100
2
3
ITR08392
ICC -- PO
5
Current Dissipation, ICC -- mA
3
VCC=3V
RL=8Ω
f=1kHz
3
2
100
7
5
3
2
--10
--12
3
5 7 100
2
3
5 7 1k
2
3
5 7 10k
2
3
Frequency, f -- Hz
PO -- VCC
5
10
3
5
7
10
2
3
5
7
Output Power, PO -- mW
100
2
3
ITR08394
RL=8Ω
THD=10%
f=1kHz
3
Output Power, PO -- mW
5 7 100k
ITR08393
2
100
7
5
3
2
10
1.4
1.8
2.2
2.6
3.0
Supply Voltage, VCC -- V
3.4
3.8
ITR08395
No.676-4/10
2SD1012
Taping Specification
2SD1012G-SPA-AC, 2SD1012F-SPA-AC
No.676-5/10
2SD1012
No.676-6/10
2SD1012
Outline Drawing
2SD1012G-SPA-AC, 2SD1012F-SPA-AC
Mass (g) Unit
0.13
mm
* For reference
No.676-7/10
2SD1012
Bag Packing Specification
2SD1012G-SPA, 2SD1012F-SPA
No.676-8/10
2SD1012
Outline Drawing
2SD1012G-SPA, 2SD1012F-SPA
Mass (g) Unit
0.13
mm
* For reference
No.676-9/10
2SD1012
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
grant any guarantee thereof. If you should intend to use our products for new introduction or other application
different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer' s
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
products at values that exceed, even momentarily, rated values (such as maximum ratings, operating
condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
high current, high voltage, or drastic temperature change, even if it is used within the range of absolute
maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a
confirmation.
SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all
semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures
or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give
rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment,
adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but
are not limited to protective circuits and error prevention circuits for safe design, redundant design, and
structural design.
In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are
controlled under any of applicable local export control laws and regulations, such products may require the
export license from the authorities concerned in accordance with the above law.
No part of this publication may be reproduced or transmitted in any form or by any means, electronic or
mechanical, including photocopying and recording, or any information storage or retrieval system, or
otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd.
Any and all information described or contained herein are subject to change without notice due to
product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the
SANYO Semiconductor Co.,Ltd. product that you intend to use.
Upon using the technical information or products described herein, neither warranty nor license shall be
granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any
third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third
party's intellectual property rights which has resulted from the use of the technical information and products
mentioned above.
This catalog provides information as of October, 2012. Specifications and information herein are subject
to change without notice.
PS No.676-10/10