Download Bipolar Transistor 10V 3A VCE(sat);0.4V max. NPN Single PCP

2SD1620
Ordering number : EN1719D
SANYO Semiconductors
DATA SHEET
2SD1620
NPN Epitaxial Planar Silicon Transistor
1.5V, 3V Strobe Applications
Features
Less power dissipation because of low VCE(sat), permitting more flashes of light to be emitted
Large current capacity and highly resistant to breakdown
Excellent linearity of hFE in the region from low current to high current
Ultrasmall size supports high-density, ultrasmall-sized hybrid IC designs
•
•
•
•
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Collector-to-Base Voltage
Collector-to-Emitter Voltage
Collector-to-Emitter Voltage
Emitter-to-Base Voltage
Collector Current
Conditions
Ratings
Unit
VCBO
VCEX
30
V
20
V
VCEO
VEBO
10
V
IC
ICP
Collector Current (Pulse)
6
V
3
A
5
A
Continued on next page.
Package Dimensions
Product & Package Information
unit : mm (typ)
7007B-004
• Package
: PCP
• JEITA, JEDEC
: SC-62, SOT-89, TO-243
• Minimum Packing Quantity : 1,000 pcs./reel
Top View
2SD1620-TD-E
2.5
2
0.4
4.0
1.0
1
Packing Type: TD
1.5
TD
Marking
LOT No.
1.6
DC
4.5
3
0.4
0.5
1.5
3.0
Electrical Connection
2
0.75
1
1 : Base
2 : Collector
3 : Emitter
Bottom View
3
SANYO : PCP
http://www.sanyosemi.com/en/network/
82212 TKIM/31010EA TKIM/31005TN(PC)/21599TH (KT)/N1596TS(KOTO)8-7707/5277KI/3045MW, TS No.1719-1/6
2SD1620
Continued from preceding page.
Parameter
Symbol
Conditions
Ratings
Unit
500
Collector Dissipation
PC
Junction Temperature
Tj
Storage Temperature
Tstg
When mounted on ceramic substrate (250mm2×0.8mm)
mW
1.3
W
150
°C
--55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Collector Cutoff Current
ICBO
IEBO
hFE
Emitter Cutoff Current
DC Current Gain
Gain-Bandwidth Product
Collector-to-Emitter Saturation Voltage
VCE(sat)
V(BR)CBO
Collector-to-Base Breakdown Voltage
Collector-to-Emitter Breakdown Voltage
min
Collector-to-Emitter Breakdown Voltage
V(BR)CEX
V(BR)CEO
Emitter-to-Base Breakdown Voltage
V(BR)EBO
typ
Unit
max
VCB=20V, IE=0A
100
nA
VEB=4V, IC=0A
100
nA
VCE=2V, IC=3A
fT
Cob
Output Capacitance
Ratings
Conditions
140
210
VCE=10V, IC=50mA
200
VCB=10V, f=1MHz
IC=3A, IB=60mA
30
MHz
pF
0.3
0.4
V
IC=10μA, IE=0A
IC=1mA, VBE=3V
30
V
20
V
IC=1mA, RBE=∞
IE=10μA, IC=0A
10
V
6
V
Ordering Information
Device
Package
Shipping
memo
PCP
1,000pcs./reel
Pb Free
2SD1620-TD-E
IC -- VCE
25mA
3
15mA
10mA
2
5mA
1
IB=0mA
0
0.2
0.4
0.6
0.8
4
25mA
15mA
3
10mA
2
5mA
1
2mA
0
40
mA
mA
A
40m
60
4
IC -- VCE
5
Collector Current, IC -- A
Collector Current, IC -- A
5
2mA
1mA
IB=0mA
0
1.0
Collector-to-Emitter Voltage, VCE -- V
1.2
ITR09987
0
5
6
Collector-to-Emitter Voltage, VCE -- V
1
2
3
4
ITR09988
No.1719-2/6
2SD1620
IC -- VBE
3.2
hFE -- IC
1000
VCE=2V
7
2.4
5
DC Current Gain, hFE
Collector Current, IC -- A
VCE=2V
2.8
2.0
1.6
1.2
0.8
3
2
100
0.4
7
0
0
0.2
0.4
0.6
0.8
1.0
Base-to-Emitter Voltage, VBE -- V
5
0.01
1.2
3
5
2
0.1
3
5
2
1.0
f=1MHz
2
7
Output Capacitance, Cob -- pF
Gain-Bandwidth Product, f T -- MHz
5
10
ITR09990
Cob -- VCB
3
VCE=10V
5
3
2
100
100
7
5
3
2
7
5
10
2
3
5
7
2
100
3
5
Collector Current, IC -- mA
10
1.0
7 1000
ITR09991
IC / IB=50
Collector Current, IC -- A
7
ICP=5A
DC
tio
2
Single pulse
Tc=25°C
3
2
3
5
7 10
ITR09993
PC -- Ta
1.6
n
3
7
5
1.0
op
era
7
5
3
7
s
1.0
0.1
5
0m
2
5
Collector Current, IC -- A
10
IC=3A
3
s
100
5
ITR09992
m
2
3
s
3
2
10
10
5
7
1m
7
3
5
ASO
7
5
1000
2
3
10
2
2
0.1
2
Collector-to-Base Voltage, VCB -- V
VCE(sat) -- IC
3
Collector-to-Emitter
Saturation Voltage, VCE(sat) -- mV
3
Collector Current, IC -- A
f T -- IC
1000
2
ITR09989
3
5
7
1.0
2
3
5
7
10
2
3
Collector-to-Emitter Voltage, VCE -- V ITR09995
Collector Dissipation, PC -- W
1.4
M
ou
1.2
nt
1.0
ed
on
ac
er
am
ic
0.8
bo
ar
d(
25
0.6
No h
0m
m2
✕0
.8
eat s
0.4
ink
m
m
)
0.2
0
0
20
40
60
80
100
120
Ambient Temperature, Ta -- °C
140
160
ITR09994
No.1719-3/6
2SD1620
Bag Packing Specification
2SD1620-TD-E
No.1719-4/6
2SD1620
Outline Drawing
2SD1620-TD-E
Land Pattern Example
Mass (g) Unit
0.058 mm
* For reference
Unit: mm
0.9
2.2
3.7
45°
45°
1.0
1.8
1.5
1.0
1.5
3.0
No.1719-5/6
2SD1620
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PS No.1719-6/6