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2SD1012 Ordering number : EN0676F SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor 2SD1012 Low-Voltage Large-Current Amplifier Applications Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Conditions Ratings Unit VCBO VCEO 20 V 15 V VEBO IC 5 V 0.7 A ICP PC 1.5 A 250 mW Junction Temperature Tj Storage Temperature Tstg 125 °C --55 to +125 °C Package Dimensions Product & Package Information unit : mm (typ) 7524-004 • Package : SPA • JEITA, JEDEC : SC-72 • Minimum Packing Quantity : 2,500 pcs./box, 500pcs./bag 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC 2.2 Marking 0.4 0.5 LOT No. 0.6 15.0 2 0.7 0.7 3.0 3.8 0.4 1 3 1.3 1.3 2 3 0.4 1 Electrical Connection D1012 Rank 1.8 3.0 4.0 1 : Emitter 2 : Collector 3 : Base SANYO : SPA http://www.sanyosemi.com/en/network/ O2412 TKIM/91003TN (KT)/91098HA (KT)/1115MY/1283KI, TS No.676-1/10 2SD1012 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Conditions ICBO IEBO VCB=15V, IE=0A VEB=4V, IC=0A hFE1 VCE=2V, IC=50mA VCE=2V, IC=500mA Pulse hFE2 Gain-Bandwidth Product fT Cob Common Base Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Ratings min typ max 160* Unit 1.0 μA 1.0 μA 960* 80 VCE=10V, IC=50mA 250 8 VCE(sat)1 VCB=10V, f=1MHz IC=5mA, IB=0.5mA VCE(sat)2 IC=100mA, IB=10mA VBE(sat) V(BR)CBO IC=100mA, IB=10mA IC=10μA, IE=0A 20 V V(BR)CEO V(BR)EBO IC=1mA, RBE=∞ 15 V IE=10μA, IC=0A 5 V 10 MHz pF 25 mV 30 80 mV 0.8 1.2 V * : The 2SD1012 is classified by 50mA hFE as follows : Rank hFE F 160 to 320 G 280 to 560 H 480 to 960 Ordering Information Device 2SD1012G-SPA 2SD1012G-SPA-AC 2SD1012F-SPA 2SD1012F-SPA-AC Package Shipping SPA 500pcs./bag SPA-WA 2,500pcs./box SPA 500pcs./bag SPA-WA 2,500pcs./box memo Pb Free No.676-2/10 2SD1012 IC -- VCE 6m 600 IB -- VBE 100 A VCE=5V 80 Base Current, IB -- μA 50m A Collector Current, IC -- mA 700 10 mA 800 4mA 500 2mA 400 300 1mA 200 60 40 20 100 0 IB=0mA 0 0.1 0.2 0.3 0.4 Collector-to-Emitter Voltage, VCE -- V 3 DC Current Gain, hFE Gain-Bandwidth Product, f T -- MHz 3 2 100 7 5 2 3 5 Collector Current, IC -- mA 10 1.0 7 100 ITR08386 Cob -- VCB 5 VCE=2V 5 2 10 hFE -- IC 7 3 7 2 3 5 10 Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 3 2 10 7 5 2 3 5 100 2 3 5 1000 Collector Current, IC -- mA 2 3 5 ITR08387 VCE(sat) -- IC 10000 f=1MHz 1.0 ITR08385 100 2 5 0.8 2 3 3 0.6 7 5 2 0.4 1000 5 10 1.0 0.2 Base-to-Emitter Voltage, VBE -- V VCE=10V 7 0 ITR08384 f T -- IC 1000 Output Capacitance, Cob -- pF 0 0.5 IC / IB=10 5 3 2 1000 5 3 2 100 5 3 2 10 3 1.0 2 3 5 7 2 10 Collector-to-Base Voltage, VCB -- V Collector Current, IC -- A 10 m 10 IC=0.7A 7 0m s s 5 3 DC 2 op era tio 0.1 7 n 5 3 2 2 3 5 7 1.0 2 3 5 10 5 7 10 Collector-to-Emitter Voltage, VCE -- V 2 3 ITR08390 2 3 5 100 2 PC -- Ta 320 ICP=1.5A 1.0 3 Collector Current, IC -- mA Collector Dissipation, PC -- mW 2 2 ITR08388 ASO 3 0.01 5 1.0 3 3 5 1000 ITR08389 280 240 200 160 120 80 40 0 0 20 40 60 80 100 Ambient Temperature, Ta -- °C 120 140 ITR09908 No.676-3/10 2SD1012 PO -- VIN 100 7 5 3 2 10 7 VCC=3V RL=8Ω f=1kHz 5 5 7 2 1.0 3 5 7 VCC=3V RL=8Ω 0dB : 44.7dB / 1kHz 0 Response -- dB 5 3 2 10 7 5 3 2 3 5 7 --2 --4 --6 --8 10 2 3 5 7 100 Output Power, PO -- mW ITR08391 f response 2 VCC=3V RL=8Ω f=1kHz 7 1.0 2 10 Input Voltage, VIN -- mV 4 Total Harmonic Distortion, THD -- % Output Power, PO -- mW 2 3 THD -- PO 100 2 3 ITR08392 ICC -- PO 5 Current Dissipation, ICC -- mA 3 VCC=3V RL=8Ω f=1kHz 3 2 100 7 5 3 2 --10 --12 3 5 7 100 2 3 5 7 1k 2 3 5 7 10k 2 3 Frequency, f -- Hz PO -- VCC 5 10 3 5 7 10 2 3 5 7 Output Power, PO -- mW 100 2 3 ITR08394 RL=8Ω THD=10% f=1kHz 3 Output Power, PO -- mW 5 7 100k ITR08393 2 100 7 5 3 2 10 1.4 1.8 2.2 2.6 3.0 Supply Voltage, VCC -- V 3.4 3.8 ITR08395 No.676-4/10 2SD1012 Taping Specification 2SD1012G-SPA-AC, 2SD1012F-SPA-AC No.676-5/10 2SD1012 No.676-6/10 2SD1012 Outline Drawing 2SD1012G-SPA-AC, 2SD1012F-SPA-AC Mass (g) Unit 0.13 mm * For reference No.676-7/10 2SD1012 Bag Packing Specification 2SD1012G-SPA, 2SD1012F-SPA No.676-8/10 2SD1012 Outline Drawing 2SD1012G-SPA, 2SD1012F-SPA Mass (g) Unit 0.13 mm * For reference No.676-9/10 2SD1012 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of October, 2012. Specifications and information herein are subject to change without notice. PS No.676-10/10