* Your assessment is very important for improving the workof artificial intelligence, which forms the content of this project
Download Bip Transistor 20V 5A VCE(sat);500mV max. NPN Single TO-126ML
Ground loop (electricity) wikipedia , lookup
Pulse-width modulation wikipedia , lookup
Mercury-arc valve wikipedia , lookup
Ground (electricity) wikipedia , lookup
Stepper motor wikipedia , lookup
Power inverter wikipedia , lookup
Three-phase electric power wikipedia , lookup
Electrical ballast wikipedia , lookup
Variable-frequency drive wikipedia , lookup
History of electric power transmission wikipedia , lookup
Schmitt trigger wikipedia , lookup
Electrical substation wikipedia , lookup
Power electronics wikipedia , lookup
Distribution management system wikipedia , lookup
Current source wikipedia , lookup
Switched-mode power supply wikipedia , lookup
Voltage regulator wikipedia , lookup
Power MOSFET wikipedia , lookup
Resistive opto-isolator wikipedia , lookup
Buck converter wikipedia , lookup
Surge protector wikipedia , lookup
Stray voltage wikipedia , lookup
Opto-isolator wikipedia , lookup
Voltage optimisation wikipedia , lookup
Alternating current wikipedia , lookup
2SD1685 Ordering number : EN2042B SANYO Semiconductors DATA SHEET 2SD1685 NPN Epitaxial Planar Silicon Transistor 20V/5A Switching Applications Applications • Strobe, voltage regulators, relay drivers, lamp drivers Features • • • Large current capacity • Fast switching time Low saturation voltage No insulator required when mounting because the leadframe of the chip is covered with plastic Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Collector-to-Base Voltage Conditions Ratings VCBO VCEO Collector-to-Emitter Voltage Emitter-to-Base Voltage Unit 60 V 20 V VEBO IC ICP Collector Current Collector Current (Pulse) Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C A W 10 W 150 °C --55 to +150 °C Product & Package Information • Package : TO-126ML • JEITA, JEDEC : TO-126 • Minimum Packing Quantity : 200 pcs./bag 2SD1685G 2SD1685F 3.6 3.3 1.0 Marking Electrical Connection 2 11.0 D1685 3 RANK LOT No. 1.5 7.5 3.0 1.4 1.0 A 8 unit : mm (typ) 7516A-002 4.0 V 5 1.5 Package Dimensions 8.0 6 1 3.0 1.6 0.8 0.8 0.75 15.5 0.7 2 3 1.7 1 1 : Emitter 2 : Collector 3 : Base 2.4 4.8 SANYO : TO-126ML http://www.sanyosemi.com/en/network/ 90512 YKIM/21599TH (KT)/4277TA, TS No.2042-1/6 2SD1685 Electrical Characteristics at Ta=25°C Parameter Symbol Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time min typ Unit max ICBO IEBO VCB=50V, IE=0A VEB=5V, IC=0A hFE1 VCE=2V, IC=500mA hFE2 VCE=2V, IC=3A fT Cob VCE=10V, IC=50mA 120 VCB=10V, f=1MHz IC=3A, IB=60mA 45 VCE(sat) VBE(sat) Base-to-Emitter Saturation Voltage Ratings Conditions 120* 100 nA 100 nA 560* 95 MHz pF 220 IC=3A, IB=60mA 500 mV 1.5 V V(BR)CBO V(BR)CEO IC=10μA, IE=0A 60 V IC=1mA, RBE=∞ 20 V V(BR)EBO ton IE=10μA, IC=0A 6 tstg tf See specified Test Circuit. V 30 ns 300 ns 40 ns * : The 2SD1685 is classified by 500mA hFE as follows : Rank hFE E 120 to 200 F 160 to 320 G 280 to 560 Switching Time Test Circuit IB1 PW=20μs D.C.≤1% OUTPUT IB2 INPUT VR RB RL 5Ω 50Ω + 100μF + 470μF VBE= --5V VCC=10V IC=10IB1= --10IB2=2A Ordering Information Package Shipping 2SD1685G Device TO-126ML 200pcs./bag 2SD1685F TO-126ML 200pcs./bag IC -- VCE 5 A A 20mA 3 15mA 10mA 2 5mA 1 2 3 4 Collector-to-Emitter Voltage, VCE -- V m 50 4 A m 60 A 40m 30mA 3 20mA 15mA 2 10mA 5mA 1 IB=0mA 0 1 IC -- VCE 30mA 4 0 Pb Free 5 Collector Current, IC -- A Collector Current, IC -- A 40m memo IB=0mA 0 5 ITR10012 0 0.2 0.4 0.6 0.8 1.0 Collector-to-Emitter Voltage, VCE -- V ITR10013 No.2042-2/6 2SD1685 IC -- VBE 6 5 DC Current Gain, hFE 3 2 0 0.2 0.4 0.6 --25 ° 1 C Ta= 7 25° 5°C C Collector Current, IC -- A 4 0.8 1.0 5 3 2 100 7 5 3 2 2 3 5 7 2 100 3 5 Collector Current, IC -- mA 100 25°C Ta=75°C --25°C 2 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 Collector Current, IC -- A Collector Current, IC -- A 10 7 5 3 5 7 10 ITR10018 ASO 2 ICP DC IC 3 DC 2 5 7 0.1 2 3 5 7 1.0 2 3 Cob -- VCB 5 7 10 ITR10015 f=1MHz 100 7 5 3 2 2 3 5 7 2 10 3 5 7 100 ITR10017 VBE(sat) -- IC IC / IB=50 5 3 2 1.0 Ta= --25°C 7 5 25°C 75°C 3 2 0.1 5 7 0.01 2 3 5 7 0.1 2 3 5 7 1.0 Collector Current, IC -- A 2 3 5 7 10 ITR10019 1m s 1 10 0ms 0m s op era tio op era tio 1.0 3 Collector-to-Base Voltage, VCB -- V Base-to-Emitter Saturation Voltage, VBE(sat) -- V Collector-to-Emitter Saturation Voltage, VCE(sat) -- mV 2 3 2 7 3 5 5 7 0.01 10 5 7 3 10 1.0 7 1000 ITR10016 IC / IB=50 7 5 2 VCE(sat) -- IC 1000 7 Collector Current, IC -- A Output Capacitance, Cob -- pF Gain-Bandwidth Product, f T -- MHz 7 10 --25°C 100 10 1.2 VCB=10V 10 2 ITR10014 f T -- IC 1000 25°C Ta=75°C 3 2 Base-to-Emitter Voltage, VBE -- V 10 VCE=2V 7 5 0 hFE -- IC 1000 VCE=2V nT c= 25 °C nT a= 7 25 °C 5 3 2 0.1 7 5 Ta=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 3 Collector-to-Emitter Voltage, VCE -- V ITR10020 No.2042-3/6 2SD1685 Bag Packing Specification 2SD1685G, 2SD1685F No.2042-4/6 2SD1685 Outline Drawing 2SD1685G, 2SD1685F Mass (g) Unit 0.97 mm * For reference No.2042-5/6 2SD1685 Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. The products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. If you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer' s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer' s products or equipment. SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein. Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. Please contact us for a confirmation. SANYO Semiconductor Co.,Ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. It is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO Semiconductor Co.,Ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of SANYO Semiconductor Co.,Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO Semiconductor Co.,Ltd. product that you intend to use. Upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of SANYO Semiconductor Co.,Ltd. or any third party. SANYO Semiconductor Co.,Ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above. This catalog provides information as of September, 2012. Specifications and information herein are subject to change without notice. PS No.2042-6/6