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Modeling Read-Out for Solid-State Quantum Computers in Silicon Vincent Conrad Supervisors: C.Pakes & L. Hollenberg Introduction Solid-State Quantum Computers in Silicon Single Electron Transistors Modeling Read-Out Results & Conclusion Further Work Solid-State Quantum Computers in Silicon Scalable Hard Qubits Kane Quantum Computer Spin-Qubit Buried Donor Charge Qubit Quantum Computer Charge-Qubit Kane Quantum Computer Kane Quantum Computer spin-qubit Buried Donor Charge-Qubit Quantum Computer Charge-qubit Single Electron Tunneling Potential Barriers Quantised energy levels Fermi Level of Source is lower then first unoccupied level of dot { Energy spacing must be greater then thermal smearing E k BT Single Electron Tunneling Applying a potential shifts energy Fermi energy of source the nowdot’s higher thenlevels. dot’s 1st unoccupied energy level. An electron can now occupy the dot. Coulomb blockade prevents others. S E T Transistor Single-Electron control Including a control gate allows us to manipulate the island’s energy levels. source dot (island) drain controlled single electron tunneling Orthodox SET theory The only quantized energy levels occur in the island. The time of electron tunneling through the barrier is assumed to be negligibly small. Coherent quantum processes consisting of several simultaneous tunneling events ("co-tunneling") are ignored. ( ne q o ) n1eC 2 n2 eC1 F 2C C C 2 Energy stored in a capacitor Work done by tunneling events SET Sensitivity extremely sensitive to voltage variations on the island conductance control gate voltage electron motion Read-Out drain Single electron’s motion between dopants. Vary potential on the sourceisland (control gate). island Induced island charge. Require induced charge > SET sensitivity. electron hole Q = CV Spin-Qubit Read-Out q Ce (Ve Vi ) Ch (Vh Vi ) Q = CV Charge Qubit Read-Out q C (V Vi ) C h (Vh Vi ) ' h ' h Results N.B. For charge qubit q is difference between two points. q = 2.49x10-2 e q = 2.14x10-2 e Conclusions Induced island charge >> SET Sensitivity 2 x 10-2 e >> 3.2 x 10-6 e Need an answer before information loss Electron-spin relaxation time (spin-qubit) Charge dissipation time (charge-qubit) Time given by shot-noise limit 6 2 Well t min inside 3.2 estimated 10 e / qtimes for both information loss mechanisms Both qubit types should produce measurable results using current technology made by the SRCQCT Further Work More complete architecture simulations. Full type3 simulation ISE-TCAD input files prepared. Estimate 100 000 node points required. Accounts and ISE-TCAD setup at HPC. Beowulf in-house cluster under construction. Matching simulations to experiment. Convert type3 simulation to replicate macroscopic charge-qubit experiment. A circuitry interlude: Nano-circuits are pretty darn small. Type3 Device hole electron electron and hole (spin-qubit) Integrated Systems Engineering – I S E –Computer T C A D Aided Technology Design coarse Poisson’s Equation Software package designed for microchip industry. (r ) 2 User specifies mesh V (r ) spacing to vary over 0 DESSIS MESH PICASSO regions of interest.Graphical user interface for visual analysisAC of analysis simulations. Orthodox approach to single-electron tunneling. fine I A V j C V Extend ISE-TCAD to nanotech/mesoscopic devices.