Download XPT IGBT Module

MIXA600AF650TSF
tentative
XPT IGBT Module
VCES
=
650 V
I C25
= 2x 720 A
VCE(sat) =
1.65 V
Common emitter + free wheeling diodes
Part number
MIXA600AF650TSF
Backside: isolated
Features / Advantages:
Applications:
Package: SimBus F
● High level of integration - only one
power semiconductor module required
for the whole drive
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● Temperature sense included
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
● AC motor drives
● Pumps, Fans
● Washing machines
● Air-conditioning system
● Inverter and power supplies
● Isolation Voltage: 3000 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Height: 17 mm
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121107
MIXA600AF650TSF
tentative
Ratings
IGBT
Symbol
VCES
Definition
collector emitter voltage
VGES
max. DC gate voltage
VGEM
max. transient gate emitter voltage
I C25
collector current
Conditions
min.
TVJ =
typ.
25°C
TC = 25°C
I C80
1.8
V
5.5
V
1.8
mA
gate emitter threshold voltage
I C = 3.2 mA; VGE = VCE
TVJ = 25°C
I CES
collector emitter leakage current
VCE = VCES; VGE = 0 V
TVJ = 25°C
TVJ = 25°C
1.65
4
4.8
gate emitter leakage current
VGE = ±20 V
Q G(on)
total gate charge
VCE = 300 V; VGE = 15 V; IC = 600 A
t d(on)
turn-on delay time
tr
current rise time
t d(off)
turn-off delay time
tf
current fall time
Eon
turn-on energy per pulse
Eoff
turn-off energy per pulse
RBSOA
reverse bias safe operating area
1.5
inductive load
TVJ = 150 °C
300 V; IC = 600 A
VGE = ±15 V; R G = 1.3 Ω
VGE = ±15 V; R G = 1.3 Ω
short circuit safe operating area
VCEmax = 650 V
t SC
short circuit duration
VCE = 900 V; VGE = ±15 V
R G = 1.3 Ω; non-repetitive
µA
840
nC
90
ns
50
ns
100
ns
40
ns
6
mJ
22.8
mJ
TVJ = 150 °C
VCEmax = 650 V
SCSOA
thermal resistance case to heatsink
mA
2
TVJ = 150 °C
I GES
V
1.85
TVJ = 150 °C
R thCH
A
A
VGE(th)
thermal resistance junction to case
V
W
I C = 600 A; VGE = 15 V
I SC
±30
720
490
collector emitter saturation voltage
R thJC
V
1750
VCE(sat)
short circuit current
±20
TC = 25°C
total power dissipation
I CM
Unit
V
TC = 80 °C
Ptot
VCE =
max.
650
TVJ = 150 °C
1200
A
10
µs
A
2400
0.085 K/W
K/W
0.05
Diode
VRRM
max. repetitive reverse voltage
TVJ = 25°C
650
V
I F25
forward current
TC = 25°C
490
A
TC = 80 °C
340
A
TVJ = 25°C
1.90
V
*
mA
I F 80
VF
forward voltage
I F = 600 A
IR
reverse current
VR = VRRM
TVJ = 125°C
TVJ = 25°C
* not applicable, see Ices value above
Q rr
reverse recovery charge
I RM
max. reverse recovery current
t rr
reverse recovery time
E rec
reverse recovery energy
R thJC
thermal resistance junction to case
R thCH
thermal resistance case to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
*
mA
tbd
µC
tbd
A
TVJ = 125°C
VR = 300 V
-di F /dt =
0 A/µs
IF = 600 A; VGE = 0 V
TVJ = 125°C
V
1.70
tbd
ns
tbd
mJ
0.095 K/W
0.04
Data according to IEC 60747and per semiconductor unless otherwise specified
K/W
20121107
MIXA600AF650TSF
tentative
Package
Ratings
SimBus F
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
Tstg
storage temperature
-40
125
°C
T VJ
virtual junction temperature
-40
175
°C
Weight
mounting torque
MT
terminal torque
d Spb/Apb
VISOL
Unit
A
XXX XX-XXXXX
Part number
Ordering
Standard
3
6
Nm
Nm
mm
terminal to backside
10.0
mm
3000
V
50/60 Hz, RMS; IISOL ≤ 1 mA
2D Data Matrix
UL
6
2500
V
0.65
V = VCEsat + 2·R·IC resp. V = VF + 2·R·IF
resistance pin to chip
Logo
3
12.7
t = 1 second
t = 1 minute
g
terminal to terminal
creepage distance on surface | striking distance through air
isolation voltage
R pin-chip
max.
350
MD
d Spp/App
typ.
mΩ
Part number
M
I
X
A
600
AF
650
T
SF
YYWWx
Date Code Location
Part Number
MIXA600AF650TSF
=
=
=
=
=
=
=
=
=
Module
IGBT
XPT IGBT
Gen 1 / std
Current Rating [A]
Common emitter + free wheeling diodes
Reverse Voltage [V]
Thermistor \ Temperature sensor
SimBus F
Marking on Product
MIXA600AF650TSF
Delivery Mode
Box
Quantity
3
Code No.
105
Temperature Sensor NTC
Symbol
Definition
Conditions
R 25
resistance
TVJ = 25°
B 25/50
temperature coefficient
typ.
min.
5
4.75
max.
Unit
5.25
kΩ
3375
K
104
R
[ ]
103
Equivalent Circuits for Simulation
I
V0
R0
T VJ = 175 °C
* on die level
IGBT
Diode
102
0
V 0 max
threshold voltage
1.1
1.21
R 0 max
slope resistance *
1.8
1
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
V
mΩ
25
50
75
100
TC [°C]
125
150
Typ. NTC resistance vs. temperature
Data according to IEC 60747and per semiconductor unless otherwise specified
20121107
MIXA600AF650TSF
tentative
Outlines SimBus F
9
0,8
4
R2,5
50
22
57,5
0,46
0
3,75
65
87
10
62
11,06
7,25
0
7,75
37,73
33,92
64,4
60,59
87,26
17
20,5
1,2
3
11
12
57,96
94,5
110
122
137
152
IXYS reserves the right to change limits, conditions and dimensions.
© 2012 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20121107