Download IQIB100N60A3

IQIB100N60A3
PRELIMINARY DATASHEET
IGBT in Trench & Field Stop-technology in Isolated SOT227 Package
1
2
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Very high switching speed
Very low VCE(sat
Designed for frequency converters and UPS
Very tight parameter distribution
High ruggedness, temperature stability
- Parallel switching capability
Pb-free lead finish; RoHS compliant
3
1
4
3
2, 4
MAXIMUM RATINGS
Parameter
Collector-emitter voltage
DC collector current, limited by Tjmax
TC= 80 oC
Pulsed collector current, tp limited by Tjmax
Gate-emitter voltage
Power dissipation
TC = 25oC
Operating junction and storage temperature
Symbol
Value
Units
VCE
600
V
IC
100
ICpulse
200
VGE
± 20
V
PD
335
W
Tj, Tstg
-55… +175
oC
Symbol
Max. Value
Units
RthJC
0.45
K/W
Viso
2500
V
A
Thermal Resistance
Parameter
Characteristics
IGBT thermal resistance, junction to case
Isolation voltage, RMS (measured between terminals and
mounting base, 50-60 Hz, for 1 minute)
1
Allowed number of short circuits: < 1000; time between short circuits: > 1s.
CAUTION: These devices are ESD sensitive. Use proper handling procedure.
© 2008 iQXPRZ Power Inc. All rights reserved
Lot 4, Allegis IT Park, Carmelray, Industrial Park II
Calamba, Laguna
Philippines
iQXPRZ Power Inc. reserves the right to
change without notice the specifications
and information contained within.
Website: www.iqxprzpower.com
Telefax +632 837 1538
IQIB100N60A3
ELECTRICAL CHARACTERISTICS, at Tj = 25oC, unless otherwise specified
Parameter
Symbol
Min.
Value
Typ.
Max.
VGE = 0V, IC = 0.2 mA
VGE = 15V, IC = 75A
Tj = 25oC
Tj = 175oC
600
-
-
-
1.45
1.70
1.9
-
IC = 1.2 mA, VCE = VGE
4.9
5.8
6.5
Conditions
Unit
Static Characteristics
Collector-emitter breakdown voltage
V(BR)CES
Collector-emitter saturation voltage
VCE(sat)
Gate-emitter threshold voltage
VGE(th)
V
Zero gate voltage collector current
ICES
VCE = 600V, VGE = 0
-
-
1.0
mA
Gate-emitter leakage current
IGES
VCE = 0V, VGE = 20V
-
-
100
nA
VCE = 25V,
VGE = 0V,
f = 1MHz
-
6200
-
-
384
-
-
190
-
VGE = 15V
-
1000
-
Dynamic Characteristics
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate charge
QGate
pF
nC
SWITCHING CHARACTERISTICS, Inductive Load at Tj = 25oC, unless otherwise specified
Parameter
Symbol
Conditions
Min.
Value
Typ.
Max.
-
100
100
-
-
60
70
-
-
600
700
-
-
70
120
-
-
4.85
6.00
-
Unit
IGBT Characteristics
Turn-on delay time
Tvj = 25oC
Tvj = 150oC
Rise time
Tvj = 25oC
Tvj = 150oC
Turn-off delay time
Tvj = 25oC
Tvj = 150oC
Fall time
Tvj = 25oC
Tvj = 150oC
Turn-on energy
Tvj = 25oC
Tvj = 150oC
Turn-off energy
Tvj = 25oC
Tvj = 150oC
© 2008 iQXPRZ Power Inc. All rights reserved
Lot 4, Allegis IT Park, Carmelray, Industrial Park II
Calamba, Laguna
Philippines
td(on)
tr
td(off)
VCE=300V
IC=100A
VGE=15V
RG=24Ω
tf
Eon
Eoff
VCE=300V, IC=100A,
di/dt=1300A/µs
VGE=15V, LS=30nH,
RG=24Ω
VCE=300V, IC=100A,
di/dt=2300A/µs
VGE=15V, LS=30nH,
RG=24Ω
iQXPRZ Power Inc. reserves the right to
change without notice the specifications
and information contained within.
ns
mJ
-
3.7
4.60
-
Website: www.iqxprzpower.com
Telefax +632 837 1538
IQIB100N60A3
Package Outline Drawing
© 2008 iQXPRZ Power Inc. All rights reserved
Lot 4, Allegis IT Park, Carmelray, Industrial Park II
Calamba, Laguna
Philippines
iQXPRZ Power Inc. reserves the right to
change without notice the specifications
and information contained within.
Website: www.iqxprzpower.com
Telefax +632 837 1538