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IGBT MODULE
Spec.No.IGBT-SP-15013 R0 P1
MBM900FS17F
Target Specification
Silicon N-channel IGBT 1700V F version
C1
C 1AUX
FEATURES
 High current rate package
 Low stray inductance & low Rth(j-c)
 Half-bridge (2in1)
 Built in temperature sensor
 Scalable large current easily handled by paralleling
 Equipped with current sensing terminals
G1
E1AUX
C 2E1
C 2AUX
G2
E2AUX
T
E2main
E2
Circuit diagram
o
ABSOLUTE MAXIMUM RATINGS (Tc=25 C )
Item
Symbol
Unit
VCES
VGES
IC
ICM
IF
IFM
Tvj op
Tstg
VISO
M
M
V
V
Collector Emitter Voltage
Gate Emitter Voltage
Collector Current
Forward Current
DC
1ms
DC
1ms
Junction Temperature
Storage Temperature
Isolation Voltage
Terminals (M3/M8)
Screw Torque
Mounting (M6)
Notes: (1) Recommended Value 5.50.5N·m
MBM900FS17F
1,700
20
900
1,800
900
1,800
-50 ~ +150
-55 ~ +150
4,000(AC 1 minute)
TBD/15
6.0
(1)
A
A
o
o
C
C
VRMS
N·m
ELECTRICAL CHARACTERISTICS
Item
Collector Emitter Cut-Off Current
Gate Emitter Leakage Current
Collector Emitter Saturation Voltage
Gate Emitter Threshold Voltage
Input Capacitance
Internal Gate Resistance
Rise Time
Turn On Time
Switching Times
Fall Time
Turn Off Time
Forward Voltage Drop
Reverse Recovery Time
Symbol
Unit
Min.
Typ.
Max.
1
10
2.35
5.5
43
TBD
TBD
TBD
TBD
TBD
1.78
20
+500
TBD
7.1
TBD
TBD
-
I CES
mA
IGES
VCEsat
VGE(th)
Cies
Rg(int)
tr
ton
tf
toff
VF
nA
V
V
nF
Ω
V
-500
TBD
4.1
TBD
trr
s
-
s
Test Conditions
o
VCE=1,700V, VGE=0V, Tvj =25 C
o
VCE=1,700V, VGE=0V, Tvj =150 C
o
VGE=20V, VCE=0V, Tvj =25 C
o
IC=900A, VGE=15V, Tvj =150 C
o
VCE=10V, IC=90mA, Tvj =25 C
o
VCE=10V, VGE=0V, f=100kHz, Tvj =25 C
o
VCE=10V, VGE=0V, f=100kHz, Tvj =25 C
VCC=900V, IC=900A
Ls=40nH
RG(on/off)=TBD
(2)
o
VGE=15V, Tvj =150 C
o
IF=900A, VGE=0V, Tvj =150 C
VCC=900V, IF=900A, Ls =40nH
o
Tvj =150 C
VCC=900V, IC=900A, Ls =40nH
RG(on/off)=TBD
(2)
o
VGE=15V, Tvj =150 C
Between C1(main) and E2(main)
o
Tc=25 C
o
Tc=25 C
Turn-on Loss per Pulse
Eon
J/P
0.23
Turn-off Loss per Pulse
Eoff
J/P
0.41
Reverse Recovery Loss per Pulse
Err
J/P
0.35
Stray Inductance Module
LSCE
nH
10
NTC-Thermistor
Resistance
R25
kΩ
5
Deviation
△R/R
%
-5
5
IGBT
Rth(j-c)
0.031
Thermal Impedance
K/W
Junction to case
FWD
Rth(j-c)
0.050
Contact Thermal Impedance
Rth(c-f)
K/W
0.02
Case to fin (per 1 arm)
Notes: (2) RG value is a test condition value for evaluation, not recommended value.
Please, determine the suitable RG value by measuring switching behaviors.
* Please contact our representatives at order.
* For improvement, specifications are subject to change without notice.
* For actual application, please confirm this spec sheet is the newest revision.
* ELECTRICAL CHARACTERISTIC values according to IEC 60747–2 IEC 60747–9
IGBT MODULE
MBM900FS17F
OUTLINE DRAWING
Spec.No.IGBT-SP-15013 R0 P2
Target Specification
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Target Specification
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Spec.No.IGBT-SP-15013 R0 P4
Target Specification
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Spec.No.IGBT-SP-15013 R0 P5
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Target Specification
HITACHI POWER SEMICONDUCTORS
Notices
1. The information given herein, including the specifications and dimensions, is subject to
change without prior notice to improve product characteristics. Before ordering,
purchasers are advised to contact Hitachi sales department for the latest version of this
data sheets.
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before use.
3. In cases where extremely high reliability is required (such as use in nuclear power
control, aerospace and aviation, traffic equipment, life-support-related medical
equipment, fuel control equipment and various kinds of safety equipment), safety should
be ensured by using semiconductor devices that feature assured safety or by means of
users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department
staff.
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any other cause during operation of the user’s units according to this data sheets. Hitachi
assumes no responsibility for any intellectual property claims or any other problems that
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sheets.
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secondary damage resulting from use at a value exceeding the absolute maximum rating.
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
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