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IGBT MODULE Spec.No.IGBT-SP-15013 R0 P1 MBM900FS17F Target Specification Silicon N-channel IGBT 1700V F version C1 C 1AUX FEATURES High current rate package Low stray inductance & low Rth(j-c) Half-bridge (2in1) Built in temperature sensor Scalable large current easily handled by paralleling Equipped with current sensing terminals G1 E1AUX C 2E1 C 2AUX G2 E2AUX T E2main E2 Circuit diagram o ABSOLUTE MAXIMUM RATINGS (Tc=25 C ) Item Symbol Unit VCES VGES IC ICM IF IFM Tvj op Tstg VISO M M V V Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current DC 1ms DC 1ms Junction Temperature Storage Temperature Isolation Voltage Terminals (M3/M8) Screw Torque Mounting (M6) Notes: (1) Recommended Value 5.50.5N·m MBM900FS17F 1,700 20 900 1,800 900 1,800 -50 ~ +150 -55 ~ +150 4,000(AC 1 minute) TBD/15 6.0 (1) A A o o C C VRMS N·m ELECTRICAL CHARACTERISTICS Item Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Internal Gate Resistance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Forward Voltage Drop Reverse Recovery Time Symbol Unit Min. Typ. Max. 1 10 2.35 5.5 43 TBD TBD TBD TBD TBD 1.78 20 +500 TBD 7.1 TBD TBD - I CES mA IGES VCEsat VGE(th) Cies Rg(int) tr ton tf toff VF nA V V nF Ω V -500 TBD 4.1 TBD trr s - s Test Conditions o VCE=1,700V, VGE=0V, Tvj =25 C o VCE=1,700V, VGE=0V, Tvj =150 C o VGE=20V, VCE=0V, Tvj =25 C o IC=900A, VGE=15V, Tvj =150 C o VCE=10V, IC=90mA, Tvj =25 C o VCE=10V, VGE=0V, f=100kHz, Tvj =25 C o VCE=10V, VGE=0V, f=100kHz, Tvj =25 C VCC=900V, IC=900A Ls=40nH RG(on/off)=TBD (2) o VGE=15V, Tvj =150 C o IF=900A, VGE=0V, Tvj =150 C VCC=900V, IF=900A, Ls =40nH o Tvj =150 C VCC=900V, IC=900A, Ls =40nH RG(on/off)=TBD (2) o VGE=15V, Tvj =150 C Between C1(main) and E2(main) o Tc=25 C o Tc=25 C Turn-on Loss per Pulse Eon J/P 0.23 Turn-off Loss per Pulse Eoff J/P 0.41 Reverse Recovery Loss per Pulse Err J/P 0.35 Stray Inductance Module LSCE nH 10 NTC-Thermistor Resistance R25 kΩ 5 Deviation △R/R % -5 5 IGBT Rth(j-c) 0.031 Thermal Impedance K/W Junction to case FWD Rth(j-c) 0.050 Contact Thermal Impedance Rth(c-f) K/W 0.02 Case to fin (per 1 arm) Notes: (2) RG value is a test condition value for evaluation, not recommended value. Please, determine the suitable RG value by measuring switching behaviors. * Please contact our representatives at order. * For improvement, specifications are subject to change without notice. * For actual application, please confirm this spec sheet is the newest revision. * ELECTRICAL CHARACTERISTIC values according to IEC 60747–2 IEC 60747–9 IGBT MODULE MBM900FS17F OUTLINE DRAWING Spec.No.IGBT-SP-15013 R0 P2 Target Specification IGBT MODULE MBM900FS17F Spec.No.IGBT-SP-15013 R0 P3 Target Specification IGBT MODULE MBM900FS17F Spec.No.IGBT-SP-15013 R0 P4 Target Specification IGBT MODULE Spec.No.IGBT-SP-15013 R0 P5 MBM900FS17F Target Specification HITACHI POWER SEMICONDUCTORS Notices 1. The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are advised to contact Hitachi sales department for the latest version of this data sheets. 2. Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3. In cases where extremely high reliability is required (such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users’ fail-safe precautions or other arrangement. Or consult Hitachi’s sales department staff. 4. In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user’s units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5. In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6. No license is granted by this data sheets under any patents or other rights of any third party or Hitachi Power Semiconductor Device, Ltd. 7. This data sheets may not be reproduced or duplicated, in any form, in whole or in part, without the expressed written permission of Hitachi Power Semiconductor Device, Ltd. 8. The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations. 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