Thyristor Device Data - rsp

... are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC as ...

... are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC as ...

0.9 Mb PDF - David Kleinfeld

... For R1 = R2 and matched JFETs, i.e., VGS (Q1) = VGS (Q2), the output voltage is exactly the input voltage and we have a perfect follower with a very large input impedance. "Matched" means that IDSS and VGS(off) are the same for each of the two FETs, so that VGS (Q1) = VGS (Q2) since the same current ...

... For R1 = R2 and matched JFETs, i.e., VGS (Q1) = VGS (Q2), the output voltage is exactly the input voltage and we have a perfect follower with a very large input impedance. "Matched" means that IDSS and VGS(off) are the same for each of the two FETs, so that VGS (Q1) = VGS (Q2) since the same current ...

MAX14591 High-Speed, Open-Drain Capable Logic

... The device features a three-state input that can put the device into high-impedance mode. When TS is low, IOVCC_ and IOVL_ are all high impedance and the internal pullup resistors are disconnected. When TS is high, the internal pullup resistors are connected when the corresponding power is in regula ...

... The device features a three-state input that can put the device into high-impedance mode. When TS is low, IOVCC_ and IOVL_ are all high impedance and the internal pullup resistors are disconnected. When TS is high, the internal pullup resistors are connected when the corresponding power is in regula ...

High Power Resistor Series

... Setting the lug at an intermediate point reduces the wattage rating by approximately the same proportion. Example: If the lug is set at half resistance, the wattage is reduced by approximately one-half. ...

... Setting the lug at an intermediate point reduces the wattage rating by approximately the same proportion. Example: If the lug is set at half resistance, the wattage is reduced by approximately one-half. ...

Techo notes – Fixed Resistors

... current through the resistor will be one Amp: I = 12 / 12. 12 divided by 12 equals 1. If we have a voltage of 12 Volt and we require a current of 2 Amp through this resistor, the resistor value will be 6 Ohm R = 12 / 6. Twelve divided by six equals 2, or at least it did when I went to school a long ...

... current through the resistor will be one Amp: I = 12 / 12. 12 divided by 12 equals 1. If we have a voltage of 12 Volt and we require a current of 2 Amp through this resistor, the resistor value will be 6 Ohm R = 12 / 6. Twelve divided by six equals 2, or at least it did when I went to school a long ...

BJT

... minority-carrier concentration results in a negative current In across the base; that is, In flows from right to left (in the negative direction of x). Some of the electrons that are diffusing through the base region will combine with holes, which are the majority carriers in the base. However, sinc ...

... minority-carrier concentration results in a negative current In across the base; that is, In flows from right to left (in the negative direction of x). Some of the electrons that are diffusing through the base region will combine with holes, which are the majority carriers in the base. However, sinc ...

JEDEC STANDARD

... electrode (of a semiconductor device): An element that performs one or more functions of emitting or collecting electrons or holes, or of controlling their movements by an electric field. junction (in a semiconductor device) (general term): A transition region between semiconductor regions of differ ...

... electrode (of a semiconductor device): An element that performs one or more functions of emitting or collecting electrons or holes, or of controlling their movements by an electric field. junction (in a semiconductor device) (general term): A transition region between semiconductor regions of differ ...

x - Research [email protected]

... and stands as a useful circuit in its own right. Using stacks of matched forwardbiased semiconductor junctions which conform to translinear conditions, a bias current can be generated which theoretically removes temperature and series resistance dependence on the particular BJT used. This proves use ...

... and stands as a useful circuit in its own right. Using stacks of matched forwardbiased semiconductor junctions which conform to translinear conditions, a bias current can be generated which theoretically removes temperature and series resistance dependence on the particular BJT used. This proves use ...

Low Level Measurements Handbook - 7th Edition

... input bias current1 when measuring voltage and lower input resistance compared to more sensitive instruments intended for low level DC meas urements. These characteristics cause errors in the measurement; refer to Sections 2 and 3 for further discussion of them. Given these DMM characteristics, it’ ...

... input bias current1 when measuring voltage and lower input resistance compared to more sensitive instruments intended for low level DC meas urements. These characteristics cause errors in the measurement; refer to Sections 2 and 3 for further discussion of them. Given these DMM characteristics, it’ ...

characterization, modeling, and design of esd

... presented. This test method offers many advantages over standard characterization techniques, including the ability to extract critical parameters of an ESD protection circuit and to determine the failure level of a circuit over a wide range of ESD stress durations. Dependencies of ESD circuit perfo ...

... presented. This test method offers many advantages over standard characterization techniques, including the ability to extract critical parameters of an ESD protection circuit and to determine the failure level of a circuit over a wide range of ESD stress durations. Dependencies of ESD circuit perfo ...

NIST Measurement Service for DC Standard Resistors

... the current I in the Hall device and is given by RH(i) = VH(i)/I = RK/i, where the von Klitzing constant RK is believed to be equal to h/e2 , and i is an integer of the quantum Hall state. The value of the U. S. representation of the ohm is consistent with the conventional value of the von Klitzing ...

... the current I in the Hall device and is given by RH(i) = VH(i)/I = RK/i, where the von Klitzing constant RK is believed to be equal to h/e2 , and i is an integer of the quantum Hall state. The value of the U. S. representation of the ohm is consistent with the conventional value of the von Klitzing ...

The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.