Electronic Devices and Circuits
... of electron energy where the electron remain bended too the atom and do not contribute to the electric current. Conduction bend is the range of electron energies higher than valance band where electrons are free to accelerate under the influence of external voltage source resulting in the flow of ch ...
... of electron energy where the electron remain bended too the atom and do not contribute to the electric current. Conduction bend is the range of electron energies higher than valance band where electrons are free to accelerate under the influence of external voltage source resulting in the flow of ch ...
Need to know current electricity
... I can select and use the equation for the total resistance of two for more resistors in parallel (1/Rtotal = 1/R1 + 1/R2 + … ). ...
... I can select and use the equation for the total resistance of two for more resistors in parallel (1/Rtotal = 1/R1 + 1/R2 + … ). ...
Sixth-Generation V-Series IGBT Module Application
... voltage characteristics varied significantly. To solve these problems, the fourth-generation S-series non-punch-through IGBT, which did not need the lifetime control technology, was developed. In the non-punch-through IGBT, the carrier injection efficiency was suppressed by controlling the impurity ...
... voltage characteristics varied significantly. To solve these problems, the fourth-generation S-series non-punch-through IGBT, which did not need the lifetime control technology, was developed. In the non-punch-through IGBT, the carrier injection efficiency was suppressed by controlling the impurity ...
LT3952 - 60V LED Driver with 4A Switch Current
... The input current sense amplifier reduces the switching current in the case of an overload. VC is reduced when the IVINP-IVINN voltage exceeds the 60mV built-in potential. Tie IVINP-IVINN across an external sense resistor to set auxiliary current limit. If unused, tie to VIN. IVINP (Pin 6): Auxiliar ...
... The input current sense amplifier reduces the switching current in the case of an overload. VC is reduced when the IVINP-IVINN voltage exceeds the 60mV built-in potential. Tie IVINP-IVINN across an external sense resistor to set auxiliary current limit. If unused, tie to VIN. IVINP (Pin 6): Auxiliar ...
Transient Peak Currents in Permanent Magnet Synchronous Motors
... a wide constant-power area. In this operation mode, it is necessary to weaken the permanent flux of the motor by applying a negative d-axis current, to ensure that the motor terminal voltage will not exceed the allowed limits (flux weakening operation). This bears the risk that in case of an inverte ...
... a wide constant-power area. In this operation mode, it is necessary to weaken the permanent flux of the motor by applying a negative d-axis current, to ensure that the motor terminal voltage will not exceed the allowed limits (flux weakening operation). This bears the risk that in case of an inverte ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.