NTP75N03L09, NTB75N03L09 Power MOSFET 75 Amps
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
2009 30 Spring Wiring Matters
... recommended as it is possible to select an inappropriate range setting; the leads may not be sufficiently robust; and the probes may have excessive bare metal exposed; all of which may possibly put the user in danger. Reliance on non-contact type voltage indicators is also not recommended for use as ...
... recommended as it is possible to select an inappropriate range setting; the leads may not be sufficiently robust; and the probes may have excessive bare metal exposed; all of which may possibly put the user in danger. Reliance on non-contact type voltage indicators is also not recommended for use as ...
Application Note Applications for Depletion MOSFETs
... When the input power for the converter is available at voltages higher than the maximum voltage rating of the IC, the voltage has to be reduced with a start-up circuit. A frequent requirement is for operation directly from a rectified 120 VAC or 230 V AC line without the use of tap changing switches ...
... When the input power for the converter is available at voltages higher than the maximum voltage rating of the IC, the voltage has to be reduced with a start-up circuit. A frequent requirement is for operation directly from a rectified 120 VAC or 230 V AC line without the use of tap changing switches ...
Capacitor - IBT LUMHS
... Permittivity – The ratio of the flux density to the electric field intensity in the dielectric. A measure of how easily the dielectric will “permit” the establishment of flux lines within the dielectric. Relative permittivity – Often called the dielectric constant, it is the ratio of the permitt ...
... Permittivity – The ratio of the flux density to the electric field intensity in the dielectric. A measure of how easily the dielectric will “permit” the establishment of flux lines within the dielectric. Relative permittivity – Often called the dielectric constant, it is the ratio of the permitt ...
Littelfuse Selecting an Appropriate ESD Device Application Note
... To compare ESD devices and evaluate their effective resistance during an ESD pulse, it is pertinent to remove all outside factors or variables some of which were previously discussed. To that end, there is another standard, IEC61000-4-5, that defines a current pulse (Figure 6) with a much slower lea ...
... To compare ESD devices and evaluate their effective resistance during an ESD pulse, it is pertinent to remove all outside factors or variables some of which were previously discussed. To that end, there is another standard, IEC61000-4-5, that defines a current pulse (Figure 6) with a much slower lea ...
CM1235 - Small Footprint ESD Clamp Array for
... does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other applicatio ...
... does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other applicatio ...
MB39C602 - Fujitsu
... The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor (CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started. ...
... The DRN pin is connected with the VDD pin through the internal VDD Switch, and VDD capacitor (CVDD) is charged from the DRN pin. When the voltage at the VDD pin reaches the threshold voltage of UVLO, the VDD Switch is turned off, and the internal Bias circuit operates, and the switching is started. ...
Resistor Selection
... the application. Standard resistors carried in stock should be considered first. If a suitable resistor cannot be found in the standard sizes or resistance values, then select a non-standard resistor from the range on available sizes (consult factory). ...
... the application. Standard resistors carried in stock should be considered first. If a suitable resistor cannot be found in the standard sizes or resistance values, then select a non-standard resistor from the range on available sizes (consult factory). ...
Potentiometer
... Main article: Digital potentiometer A digital potentiometer (often called digipot) is an electronic component that mimics the functions of analog potentiometers. Through digital input signals, the resistance between two terminals can be adjusted, just as in an analog potentiometer. There are two mai ...
... Main article: Digital potentiometer A digital potentiometer (often called digipot) is an electronic component that mimics the functions of analog potentiometers. Through digital input signals, the resistance between two terminals can be adjusted, just as in an analog potentiometer. There are two mai ...
UCCx813-x Low-Power Economy BiCMOS
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
... Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absol ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.