Chapter 4 Analog CMOS Subcircuits 4.1 MOS Switch
... its OFF resistance , rOFF. Ideally rON is zero and rOFF is infinite. Reality is such that rON is never zero and rOFF is never infinite. Moreover, these values are never constant with respect to terminal conditions. In general, switches can have some form of voltage offset which is modeled by VOS of ...
... its OFF resistance , rOFF. Ideally rON is zero and rOFF is infinite. Reality is such that rON is never zero and rOFF is never infinite. Moreover, these values are never constant with respect to terminal conditions. In general, switches can have some form of voltage offset which is modeled by VOS of ...
Backlight Driver for 5 LEDs with Charge Pump and PWM Control
... The backlight outputs are supported by a high efficiency, high current fractional charge pump output. The charge pump multiplies the input voltage by 1, 1.5, or 2 times. The charge pump switches at a fixed frequency of 250kHz in 1.5x and 2x modes and is disabled in 1x mode to save power and improve ...
... The backlight outputs are supported by a high efficiency, high current fractional charge pump output. The charge pump multiplies the input voltage by 1, 1.5, or 2 times. The charge pump switches at a fixed frequency of 250kHz in 1.5x and 2x modes and is disabled in 1x mode to save power and improve ...
doctor - Shodhganga
... inductor, resonance occurs. For certain circuit parameters and forcing frequency, when a slight variation in one of them occurs, the signal is suddenly enhanced somewhere in the circuit. There are many situations found in electrical system networks in which each case of the above circuit parameters ...
... inductor, resonance occurs. For certain circuit parameters and forcing frequency, when a slight variation in one of them occurs, the signal is suddenly enhanced somewhere in the circuit. There are many situations found in electrical system networks in which each case of the above circuit parameters ...
SE-325 Manual
... monitored loop. If a ground fault in the sensing-resistor conductor is unlikely, a minimal loss of protection will result if it does not pass through the ground-fault-CT window. CAUTION: Voltage at terminal N rises to line-to-neutral voltage when a ground fault occurs. The same clearances are requir ...
... monitored loop. If a ground fault in the sensing-resistor conductor is unlikely, a minimal loss of protection will result if it does not pass through the ground-fault-CT window. CAUTION: Voltage at terminal N rises to line-to-neutral voltage when a ground fault occurs. The same clearances are requir ...
TPS40180 Single Phase Stackable Controller
... Stacked modules can be configured to switch at different times while running at the same base frequency creating a multiple phase supply. Up to eight phases can be configured, and multiple modules can be set up to switch on the same phase if required. Input and output ripple current reduction occurs ...
... Stacked modules can be configured to switch at different times while running at the same base frequency creating a multiple phase supply. Up to eight phases can be configured, and multiple modules can be set up to switch on the same phase if required. Input and output ripple current reduction occurs ...
CdZnTe Semiconductor Detectors for Spectroscopic X
... into pixilated detector arrays. After the material was cut to 3 mm thick slices using a multi-wire saw single crystal pieces were selected for dicing some of which contained twin defects. Either fixed abrasive blade saw or multi-wire saw was used for dicing out the 8.7 mm 8.7 mm 3.0 mm CdZnTe single ...
... into pixilated detector arrays. After the material was cut to 3 mm thick slices using a multi-wire saw single crystal pieces were selected for dicing some of which contained twin defects. Either fixed abrasive blade saw or multi-wire saw was used for dicing out the 8.7 mm 8.7 mm 3.0 mm CdZnTe single ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.