Current Control of VSI-PWM Inverters
... Simulation results for the hysteresis controller with three dependent controls and the programmed application of the zero voltage vector indicate that the magnitude and phase error in the line currents are small. Also, the current errors remain within the hysteresis band. The average inverter switch ...
... Simulation results for the hysteresis controller with three dependent controls and the programmed application of the zero voltage vector indicate that the magnitude and phase error in the line currents are small. Also, the current errors remain within the hysteresis band. The average inverter switch ...
Load, Switch, and Commutation Considerations
... as shown on the coil voltage waveform (the coil voltage areas cancel). iii. The parallel Zener diode requirement is VZ2 = Vs+VZ1 = 100V+25V = 125V. iv. Zener diode VZ1 in the parallel-load reset circuit: The energy ½LI 2 is transferred from the coil to the Zener diode when the switch is turned off. ...
... as shown on the coil voltage waveform (the coil voltage areas cancel). iii. The parallel Zener diode requirement is VZ2 = Vs+VZ1 = 100V+25V = 125V. iv. Zener diode VZ1 in the parallel-load reset circuit: The energy ½LI 2 is transferred from the coil to the Zener diode when the switch is turned off. ...
AC Induction Motor Stator Resistance Estimation Algorithm
... motor with equal parameters as they were used in simulations. The PDSFC control algorithm was implemented in DSP 56F805 EVM from Freescale Semiconductors. The Freescale AC BLDC power stage was used as a voltage source inverter. The sampling frequency of PWM block was f = 16kHz. The motor was loaded ...
... motor with equal parameters as they were used in simulations. The PDSFC control algorithm was implemented in DSP 56F805 EVM from Freescale Semiconductors. The Freescale AC BLDC power stage was used as a voltage source inverter. The sampling frequency of PWM block was f = 16kHz. The motor was loaded ...
Is-limiter The world fastest limiting and switching device
... current at the first rise, i.e. in less than 1 ms. The maximum instantaneous current occurring remains well below the level of the peak short-circuit current. In comparison with complex conventional solutions, the IS-limiter has both technical and economic advantages when used in transformer or gen ...
... current at the first rise, i.e. in less than 1 ms. The maximum instantaneous current occurring remains well below the level of the peak short-circuit current. In comparison with complex conventional solutions, the IS-limiter has both technical and economic advantages when used in transformer or gen ...
36-V, Prog.-Gain, Voltage-Output, Bidir, Zero
... The device operates from a single +2.7-V to +36-V power supply, drawing a maximum of 350 μA of supply current. The device is specified over the extended operating temperature range (–40°C to +125°C), and is offered in an MSOP-8 package. ...
... The device operates from a single +2.7-V to +36-V power supply, drawing a maximum of 350 μA of supply current. The device is specified over the extended operating temperature range (–40°C to +125°C), and is offered in an MSOP-8 package. ...
LM3409, -Q1, LM3409HV
... both continuous conduction mode (CCM) and discontinuous conduction mode (DCM) with no external control loop compensation, while providing an inherent cycle-by-cycle current limit. The adjustable current sense threshold provides the capability to amplitude (analog) dim the LED current over the full r ...
... both continuous conduction mode (CCM) and discontinuous conduction mode (DCM) with no external control loop compensation, while providing an inherent cycle-by-cycle current limit. The adjustable current sense threshold provides the capability to amplitude (analog) dim the LED current over the full r ...
Pdf - Text of NPTEL IIT Video Lectures
... So, this is the equation that you have to solve. Two thirds K parallel with whatever resistance that is going to be brought after 3 volts is reached, divided by two thirds plus R dash is equal to one third K. So, R dash will become equal to two thirds K. So, that means, if I now bring in another res ...
... So, this is the equation that you have to solve. Two thirds K parallel with whatever resistance that is going to be brought after 3 volts is reached, divided by two thirds plus R dash is equal to one third K. So, R dash will become equal to two thirds K. So, that means, if I now bring in another res ...
ISL45042A - Intersil
... and R2 (see Figure 1). The voltage difference between the VOUT pin and ISET pin (see Figure 5) has to be greater than 1.75V. This will keep the output MOS transistor in the saturation region. Expected current settings and 7-bit accuracy occurs when the output MOS transistor is operating in the satur ...
... and R2 (see Figure 1). The voltage difference between the VOUT pin and ISET pin (see Figure 5) has to be greater than 1.75V. This will keep the output MOS transistor in the saturation region. Expected current settings and 7-bit accuracy occurs when the output MOS transistor is operating in the satur ...
File
... ideal diode operation. • Since the barrier potential and the forward dynamic resistance are neglected, the diode is assumed to have a zero voltage across it when forward-biased, as indicated by the portion of the curve on the ...
... ideal diode operation. • Since the barrier potential and the forward dynamic resistance are neglected, the diode is assumed to have a zero voltage across it when forward-biased, as indicated by the portion of the curve on the ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.