Download DSS60601MZ4 Features Mechanical Data

DSS60601MZ4
60V NPN LOW SATURATION TRANSISTOR IN SOT223
Features
Mechanical Data

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
BVCEO > 60V
IC = 6A High Continuous Current
ICM = 12A Peak Pulse Current
Low Saturation Voltage VCE(sat) < 60mV @ 1A
Complementary PNP Type: DSS60600MZ4
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Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 Standards for High Reliability

Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.115 grams (approximate)
C
SOT223
B
E
Top View
Top View
Pin-Out
Device Symbol
Ordering Information (Note 4)
Product
DSS60601MZ4-13
Notes:
Compliance
AEC-Q101
Marking
ZNS66
Reel Size (inches)
13
Tape width (mm)
12
Quantity per reel
2500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
YWW
ZNS66
ZNS66 = Product Type Marking Code
YWW = Date Code Marking
Y = Last digit of year (ex: 4 = 2014)
WW = Week code 01 - 52
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DSS60601MZ4
Document number: DS31587 Rev. 3 - 2
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DSS60601MZ4
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Collector Current
Symbol
VCBO
VCEO
VEBO
IC
ICM
Value
100
60
6
6
12
Unit
V
V
V
A
A
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Leads (Note 8)
Operating and Storage Temperature Range
Symbol
(Note 5)
(Note 6)
(Note 7)
(Note 5)
(Note 6)
(Note 7)
PD
RθJA
RθJL
TJ, TSTG
Value
3
2
1.2
41.7
62.5
104
12.9
-55 to +150
Unit
W
C/W
C/W
C
ESD Ratings (Note 9)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Notes:
Symbol
ESD HBM
ESD MM
Value
4,000
400
Unit
V
V
JEDEC Class
3A
C
5. For a device mounted with the collector lead on 50mm x 50mm 2oz copper that is on a single-sided 1.6mm FR4 PCB; device is measured under still air
conditions whilst operating in steady-state.
6. Same as note (5), except the device is mounted on 25mm x 25mm 2oz copper.
7. Same as note (5), except the device is mounted on minimum recommended pad (MRP) layout.
8. Thermal resistance from junction to solder-point (at the end of the collector lead).
9. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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Thermal Characteristics and Derating Information
Pw = 1ms
10
10
Pw = 10ms
VCE(sat)
IC Collector Current (A)
IC, COLLECTOR
CURRENT
IC Collector
Current
(A) (A)
100
Limit
1
1
Pw = 100ms
DC
0.1
1s
100ms
100m
10ms
T amb=25°C
0.01
25mm x 25mm
2oz FR4
10m
VCE(sat)
Limit
1
DC
1s
100ms
100m
1ms
100µs
1
0.001
0.1
10
Safe Operating Area
50
T amb=25°C
60
25mm x 25mm
2oz FR4
50
D=0.5
30
20
Single Pulse
D=0.2
D=0.05
10
0
100µ
D=0.1
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Thermal Resistance (°C/W)
Thermal Resistance (°C/W)
10
VCE Collector-Emitter Voltage (V)
70
100
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ
1m
10m 100m
1
10
100
Pulse Width (s)
1k
Max Power Dissipation (W)
Single Pulse
T amb=25°C
Tamb=25°C
40
50mm x 50mm
2oz FR4
30
D=0.5
20
Single Pulse
D=0.2
10
D=0.05
0
100µ
D=0.1
1m
10m 100m
1
10
100
3.0
50mm x 50mm
2oz FR4
2.5
2.0
25mm x 25mm
2oz FR4
1.5
1.0
0.5
0.0
0
Pulse Power Dissipation
20
40
60
80
100 120 140 160
Temperature (°C)
Derating Curve
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DSS60601MZ4
Document number: DS31587 Rev. 3 - 2
1k
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
Max Power Dissipation (W)
100µs
1
1
10
VCE Collector-Emitter
Voltage (V)100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Safe
Area
Fig.Operating
2 Typical Collector
Current
vs. Collector-Emitter Voltage (Note 3)
40
1ms
50mm x 50mm
2oz FR4
10m
10
10ms
T amb=25°C
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Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 10)
Emitter-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
BVCBO
BVCEO
BVEBO
100
60
6












100
50
100
V
V
V
nA
A
nA






80


40



360


40
60
100
220
300
50
0.9
0.9
m
V
V
Collector-Base Cutoff Current
ICBO
Emitter-Base Cutoff Current
ON CHARACTERISTICS (Note 10)
IEBO
Collector-Emitter Saturation Voltage
VCE(SAT)
Equivalent On-Resistance
Base-Emitter Saturation Voltage
Base-Emitter Turn-on Voltage
SMALL SIGNAL CHARACTERISTICS
RCE(SAT)
VBE(SAT)
VBE(ON)
150
120
100
50








Transition Frequency
fT
100


MHz
Output Capacitance
Input Capacitance
Turn-On Time
Delay Time
Rise Time
Turn-Off Time
Storage Time
Fall Time
Cobo
Cibo
ton
td
tr
toff
ts
tf


—
—
—
—
—
—
26
325
87
41
46
294
250
44


—
—
—
—
—
—
pF
pF
ns
ns
ns
ns
ns
ns
DC Current Gain
Notes:
hFE

mV
Test Conditions
IC = 100A
IC = 10mA
IE = 100A
VCB = 40V, IE = 0
VCB = 40V, IE = 0, TJ = 150°C
VEB = 6V, IC = 0
VCE = 2V, IC = 0.5A
VCE = 2V, IC = 1A
VCE = 2V, IC = 2A
VCE = 2V, IC = 6A
IC = 0.1A, IB = 2.0mA
IC = 1A, IB = 100mA
IC = 2A, IB = 200mA
IC = 3A, IB = 60mA
IC = 6A, IB = 600mA
IE = 2A, IB = 200mA
IC = 1A, IB = 100mA
VCE = 2V, IC = 1A
VCE = 10V, IC = 100mA,
f = 100MHz
VCB = 10V, f = 1MHz
VEB = 5V, f = 1MHz
VCC = -30v,
ICC = 150mA
IB1 = - IB2 =15mA
10. Measured under pulsed conditions. Pulse width  300μs. Duty cycle 2%.
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Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1,000
1.4
TA = 150°C
T A = 85°C
1.0
IB = 5mA
0.8
IB = 4mA
0.6
IB = 3mA
0.4
IB = 2mA
0.2
hFE, DC CURRENT GAIN
IC, COLLECTOR CURRENT (mA)
VCE = 2V
1.2
T A = 25°C
100
IB = 1mA
10
0
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical DC Current Gain vs. Collector Current
1
2
3
4
5
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 3 Typical Collector Current
vs. Collector-Emitter Voltage
1
IC/IB = 10
T A = 150°C
0.1
T A = 85°C
TA = 25°C
TA = -55°C
0.01
0.001
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 5 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
VBE(ON), BASE-EMITTER TURN-ON VOLTAGE (V)
0
VCE(SAT), COLLECTOR-EMITTER
SATURATION VOLTAGE (V)
TA = -55°C
1.2
VCE = 2V
1.0
0.8
TA = -55°C
0.6
TA = 25°C
0.4
0.2
0
T A = 85°C
TA = 150°C
1
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
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1,000
1.2
1.0
Cibo
0.8
TA = -55°C
0.6
TA = 25°C
T A = 85°C
0.4
100
TA = 150°C
0.2
Cobo
0
1
1,000
fT, GAIN-BANDWIDTH PRODUCT (MHz)
f = 1MHz
IC/IB = 10
CAPACITANCE (pF)
VBE(SAT), BASE-EMITTER SATURATION VOLTAGE (V)
DSS60601MZ4
10
100
1,000
10,000
IC, COLLECTOR CURRENT (mA)
Fig. 7 Typical Base-Emitter Saturation Voltage
vs. Collector Current
10
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 8 Typical Capacitance Characteristics
100
10
VCE = 10V
f = 100MHz
1
0
10
20 30 40 50 60 70 80 90 100
IC, COLLECTOR CURRENT (mA)
Fig. 9 Typical Gain-Bandwidth Product
vs. Collector Current
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Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D
Q
b1
C
E
SOT223
Dim Min Max Typ
A
1.55 1.65 1.60
A1 0.010 0.15 0.05
b
0.60 0.80 0.70
b1
2.90 3.10 3.00
C
0.20 0.30 0.25
D
6.45 6.55 6.50
E
3.45 3.55 3.50
E1
6.90 7.10 7.00
e
4.60
e1
2.30
L
0.85 1.05 0.95
Q
0.84 0.94 0.89
All Dimensions in mm
E1
Gauge
Plane
0.25
Seating
Plane
e1
b
-1
0°
e
A1
0°
7°
7°
A
L
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
C1
Y2
X2
Dimensions
X1
X2
Y1
Y2
C1
C2
Value (in mm)
3.3
1.2
1.6
1.6
6.4
2.3
C2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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