Using Electrostatic Discharge Test Method for Full
... ESD risk during fast handling processes [3]. Better process engineering design can create a slow, safe discharge (ground) path using a dissipative material in direct contact with a charged part or material in order to reduce ESD risks. This engineering activity is usually designed within the specifi ...
... ESD risk during fast handling processes [3]. Better process engineering design can create a slow, safe discharge (ground) path using a dissipative material in direct contact with a charged part or material in order to reduce ESD risks. This engineering activity is usually designed within the specifi ...
LM2840/41/42/40Q/41Q/42Q 100/300/600 mA
... To reduce problems with conducted noise pick up, the ground side of the feedback network should be connected directly to the GND pin with its own connection. The feedback network, resistors R1 and R2, should be kept close to the FB pin, and away from the inductor to minimize coupling noise into the ...
... To reduce problems with conducted noise pick up, the ground side of the feedback network should be connected directly to the GND pin with its own connection. The feedback network, resistors R1 and R2, should be kept close to the FB pin, and away from the inductor to minimize coupling noise into the ...
2 SERIES AND PARALLEL CONSECTIONS
... elements are connected to one another. The branch currents and branch voltages are in turn related according to the characteristics of the circuit elements. As seen in the previous section, these characteristics for twoterminal resistors may be linear or nonlinear, time-invariant or time-varying. Th ...
... elements are connected to one another. The branch currents and branch voltages are in turn related according to the characteristics of the circuit elements. As seen in the previous section, these characteristics for twoterminal resistors may be linear or nonlinear, time-invariant or time-varying. Th ...
TPS61194-Q1 Low-EMI Automotive LED Driver With 4 100
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absol ...
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absol ...
TPS65150-Q1 Low Input Voltage, Compact LCD Bias IC With VCOM
... Fault delay. Connecting a capacitor from this pin to VI sets the delay time from the point when one or more of the of the outputs V(VS), V(VGH), V(VGL) drops below its power good threshold until the device shuts down. To restart the device, the input voltage must be cycled to ground. This feature ca ...
... Fault delay. Connecting a capacitor from this pin to VI sets the delay time from the point when one or more of the of the outputs V(VS), V(VGH), V(VGL) drops below its power good threshold until the device shuts down. To restart the device, the input voltage must be cycled to ground. This feature ca ...
LM2574/LM2574HV SIMPLE SWITCHER 0.5A Step
... replacement for popular three-terminal linear regulators. Because of its high efficiency, the copper traces on the printed-circuit board (PCB) are normally the only heat sinking needed. A standard series of inductors optimized for use with the LM2574 are available from several different manufacturer ...
... replacement for popular three-terminal linear regulators. Because of its high efficiency, the copper traces on the printed-circuit board (PCB) are normally the only heat sinking needed. A standard series of inductors optimized for use with the LM2574 are available from several different manufacturer ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.