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Chapter 22
Chapter 22

datasheet - Texas Instruments
datasheet - Texas Instruments

... The TPS769xx uses a PMOS pass element to dramatically reduce both dropout voltage and supply current over more conventional PNP-pass-element LDO designs. The PMOS pass element is a voltage-controlled device and, unlike a PNP transistor, it does not require increased drive current as output current i ...
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DMMT2907A Features & Benefits Mechanical Data

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Industrial IGBT Modules Explanation of Technical Information

... The difference between a preliminary and a final datasheet is, that certain values are still missing, for example the maximum values. These missing values in the preliminary datasheet are marked to be defined (t.b.d.). Modules without ENG on the label reached series production status. All quality re ...
US6J11
US6J11

Electronics Tutorial about the Types of Resistors The Different Types
Electronics Tutorial about the Types of Resistors The Different Types

... out the energy lost. When used in DC circuits the potential difference, also known as a resistors voltage drop, is measured across the terminals as the circuit current flows through the resistor. Most resistors are linear devices that produce a voltage drop across themselves when an electrical curre ...
MAX17502 60V, 1A, Ultra-Small, High-Efficiency, Synchronous Step-Down DC-DC Converter General Description
MAX17502 60V, 1A, Ultra-Small, High-Efficiency, Synchronous Step-Down DC-DC Converter General Description

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DS3904/DS3905 Triple 128-Position Nonvolatile Digital Variable Resistor/Switch General Description

DS3904/DS3905 Triple 128-Position Nonvolatile Digital Variable
DS3904/DS3905 Triple 128-Position Nonvolatile Digital Variable

... Note 4: Absolute linearity is used to determine expected resistance. Absolute linearity is defined as the deviation from the straight line drawn from the value of the resistance at position 00h to the value of the resistance at position 7Fh. Note 5: Relative linearity is used to determine the change ...
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AN-9005 - Fairchild Semiconductor

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- ASU Digital Repository

... high frequency and high temperature applications in the recent years [1,2,3]. The major applications of these devices have been in the blue laser technology and also in microwave power technology. Even though the electron effective mass in the GaN technology is three times when compared to GaAs tech ...
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MMDTA06 Features & Benefits Mechanical Data

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AN-9005 Driving and Layout Design for Fast Switching

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Supplementary Information for
Supplementary Information for

... C5), MicroChem Corp.), baked at 180 °C for 10 min. Then EBL and thermal evaporation were used to define Ti/Pd/Ti (1.5/120/10 nm) S/D contacts on each side of selected GeNW branches, which are within 30o with respect to the surface normal, on the corresponding SiNW backbones (Fig. S1d). The typical ...
QS6J11
QS6J11

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BE01416521657.121

UCC28063A - Texas Instruments
UCC28063A - Texas Instruments

... SNVSA88B – DECEMBER 2014 – REVISED MARCH 2015 ...
2. Overview of Beyond CMOS Devices
2. Overview of Beyond CMOS Devices

< 1 ... 3 4 5 6 7 8 9 10 11 ... 74 >

Memristor



The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.
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