Download RRR040P03

4V Drive Pch MOSFET
RRR040P03
 Structure
Silicon P-channel MOSFET
 Dimensions (Unit : mm)
TSMT3
Features
1) Low On-resistance.
2) Space saving small surface mount package (TSMT3).
3) 4V drive.
(3)
(1)
(2)
Abbreviated symbol : UG
 Application
Switching
 Packaging specifications
 Inner circuit
Package
Code
Basic ordering unit (pieces)
RRR040P03
Taping
TL
3000

Type
(3)
∗2
(1)
∗1
 Absolute maximum ratings (Ta = 25C)
Parameter
Symbol
Limits
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
 20
V
Drain current
Source current
(Body Diode)
Continuous
ID
4
A
Pulsed
Continuous
IDP
IS
*1
 16
0.8
A
A
Pulsed
ISP
*1
16
A
PD
*2
1.0
W
Tch
Tstg
150
55 to +150
C
C
Symbol
Limits
Unit
125
C / W
Power dissipation
Channel temperature
Range of storage temperature
(1) Gate
(2) Source
(3) Drain
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
*1 Pw10s, Duty cycle1%
*2 Mounted on a ceramic board.
 Thermal resistance
Parameter
Channel to Ambient
Rth
(ch-a)*
*Mounted on a ceramic board.
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1/5
2010.04 - Rev.A
RRR040P03
Data Sheet
 Electrical characteristics (Ta = 25C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR)DSS
Min.
Typ.
Max.
Unit
Conditions
-
-
10
A
VGS=20V, VDS=0V
30
-
-
V
ID=1mA, VGS=0V
IDSS
-
-
1
A
VDS=30V, VGS=0V
Gate threshold voltage
VGS (th)
1.0
-
2.5
V
VDS=10V, ID=1mA
Static drain-source on-state
resistance
-
32
45
*
RDS (on)
ID=4A, VGS=10V
-
45
63
m ID=2A, VGS=4.5V
-
52
72
ID=2A, VGS=4.0V
Zero gate voltage drain current
l Yfs l*
2.7
-
-
S
ID=4A, VDS=10V
Input capacitance
Ciss
-
1000
-
pF
VDS=10V
Output capacitance
Coss
-
150
-
pF
VGS=0V
Reverse transfer capacitance
Crss
-
130
-
pF
f=1MHz
Turn-on delay time
td(on) *
-
15
-
ns
ID=2A, VDD 15V
Forward transfer admittance
Rise time
tr *
-
30
-
ns
VGS=10V
td(off) *
-
85
-
ns
RL=7.5
tf *
-
45
-
ns
RG=10
Total gate charge
Qg *
-
10.5
-
nC
ID=4A, VDD 15V
Gate-source charge
Gate-drain charge
Qgs *
Qgd *
-
3.0
3.3
-
nC
nC
VGS=5V RL=3.8
RG=10
Turn-off delay time
Fall time
*Pulsed
Body diode characteristics (Source-Drain) (Ta = 25C)
Parameter
Forward Voltage
Symbol
VSD *
Min.
Typ.
Max.
Unit
Conditions
-
-
1.2
V
Is=4A, VGS=0V
*Pulsed
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2/5
2010.04 - Rev.A
RRR040P03
Data Sheet
 Electrical characteristics curves
VGS= -2.8V
2
1
Ta=25°C
VGS= -2.8V Pulsed
VGS= -2.5V
3
VGS= -10V
VGS= -4.5V
VGS=-4.0V
VGS=-3.0V
2
1
VGS= -2.5V
0
0.6
0.8
1
0
2
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
100
10
0.1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
0.1
1
1
10
DRAIN-CURRENT : -ID[A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅳ)
10
4
1000
VGS= -4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
100
10
0.1
1
10
DRAIN-CURRENT : -ID[A]
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.01
3
GATE-SOURCE VOLTAGE : -VGS[V]
10
VDS= -10V
Pulsed
1
2
Fig.3 Typical Transfer Characteristics
Fig.5 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅱ)
FORWARD TRANSFER ADMITTANCE : |Yfs| [S]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
10
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0
DRAIN-CURRENT : -ID[A]
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
1
0.01
10
10
10
VGS= -4.0V
Pulsed
0.1
8
100
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅰ)
100
6
VGS= -10V
Pulsed
DRAIN-CURRENT : -ID[A]
1000
0.1
Fig.2 Typical Output Characteristics( Ⅱ)
1000
VGS= -4.0V
VGS= -4.5V
VGS= -10V
Ta= 125°C
Ta= 75°C
1 Ta= 25°C
Ta= - 25°C
DRAIN-SOURCE VOLTAGE : -VDS[V]
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical Output Characteristics( Ⅰ)
Ta=25°C
Pulsed
4
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(on)[mΩ]
0.4
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current( Ⅲ)
SOURCE CURRENT : -Is [A]
0.2
10
VDS= -10V
Pulsed
0.001
0
0
1000
DRAIN CURRENT : -ID[A]
3
100
4
Ta=25°C
Pulsed
VGS= -10V
VGS= -4.5V
VGS= -4.0V
DRAIN CURRENT : -ID[A]
DRAIN CURRENT : -ID[A]
4
10
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
0.1
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/5
0
0.5
1
1.5
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2010.04 - Rev.A
Data Sheet
ID= -2.0A
100
10000
Ta=25°C
Pulsed
ID= -4.0A
50
tf
100
td(on)
10
tr
0
1
0
5
10
15
GATE-SOURCE VOLTAGE : -VGS[V]
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
10000
CAPACITANCE : C [pF]
td(off)
1000
8
Ta=25°C
VDD= -15V
VGS= -10V
RG=10Ω
Pulsed
Ta=25°C
f=1MHz
VGS=0V
0.01
0.1
1
10
DRAIN-CURRENT : -ID[A]
Fig.11 Switching Characteristics
GATE-SOURCE VOLTAGE : -VGS [V]
150
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
RRR040P03
6
4
Ta=25°C
VDD= -15V
ID= -4.0A
RG=10Ω
Pulsed
2
0
0
5
10
15
TOTAL GATE CHARGE : Qg [nC]
Fig.12 Dynamic Input Characteristics
Ciss
1000
Crss
100
Coss
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
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©2010 ROHM Co., Ltd. All rights reserved.
4/5
2010.04 - Rev.A
RRR040P03
Data Sheet
 Measurement circuits
Pulse Width
ID
VDS
VGS
VGS
10%
50%
90%
50%
RL
10%
D.U.T.
VDD
RG
VDS
10%
90%
td(on)
tr
ton
90%
td(off)
tf
toff
Fig.1-2 Switching Waveforms
Fig.1-1 Switching time measurement circuit
VG
ID
VDS
VGS
Qg
RL
VGS
IG(Const.)
D.U.T.
Qgs
Qgd
VDD
Charge
Fig.2-1 Gate charge measurement circuit
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Fig.2-2 Gate Charge Waveform
5/5
2010.04 - Rev.A
Notice
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R1010A