Download RRR030P03

4V Drive Pch MOSFET
RRR030P03
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
TSMT3
1.0MAX
2.9
0.85
0.4
0.7
(3)
1.6
2.8
zFeatures
1) Low On-resistance
2) Space saving-small surface mount package (TSMT3)
3) 4V drive
0.3~0.6
0~0.1
(2)
(1)
0.95 0.95
0.16
1.9
(1) Gate
Each lead has same dimensions
(2) Source
(3) Drain
zApplications
Switching
Abbreviated symbol : UA
zInner circuit
(3)
zPackaging specifications
Package
Type
∗2
Taping
(1)
TL
Code
Basic ordering unit (pieces)
∗1
3000
RRR030P03
(2)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Gate
(2) Source
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Total power dissipation
Channel temperature
Range of storage temperature
Continuous
Pulsed
Continuous
Pulsed
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±3
±12
−0.8
−12
1.0
150
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
125
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 When mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
∗ When mounted on a ceramic board
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c 2009 ROHM Co., Ltd. All rights reserved.
○
1/4
2009.04 - Rev.A
Data Sheet
RRR030P03
zElectrical characteristics (Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
−
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS −30
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-state
RDS (on)∗
−
resistance
−
Yfs ∗ 2.4
Forward transfer admittance
Ciss
−
Input capacitance
Coss
−
Output capacitance
Crss
−
Reverse transfer capacitance
td (on) ∗
−
Turn-on delay time
tr ∗
−
Rise time
td (off) ∗
−
Turn-off delay time
tf ∗
−
Fall time
Qg ∗
−
Total gate charge
Qgs ∗
−
Gate-source charge
Qgd ∗
−
Gate-drain charge
−
−
−
−
55
85
95
−
480
70
70
7
18
50
35
5.2
1.6
1.6
±10
−
−1
−2.5
75
115
125
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS= ±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −3A, VGS= −10V
ID= −1.5A, VGS= −4.5V
ID= −1.5A, VGS= −4V
VDS= −10V, ID= −3A
VDS= −10V
VGS=0V
f=1MHz
VDD −15V
ID= −1.5A
VGS= −10V
RL 10Ω
RGS=10Ω
VDD −15V, ID= −3A
VGS= −5V
RL 5Ω, RG=10Ω
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS= −3A, VGS=0V
∗Pulsed
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c 2009 ROHM Co., Ltd. All rights reserved.
○
2/4
2009.04 - Rev.A
Data Sheet
RRR030P03
zElectrical characteristic curves
3
Ta=25°C
Pulsed
-3.8V
2
-3.2V
1.5
-3.0V
1
-2.8V
0.5
2
-3.2V
1.5
-3.0V
1
VGS= -2.8V
0.5
VGS=-2.5V
0
0
0.2
0.4
0.6
0.8
1
2
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.1 Typical output characteristics(Ⅰ)
1000
Ta=25°C
Pulsed
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
1000
VGS= -4.0V
VGS= -4.5V
VGS= -10V
100
1
10
8
Ta= 75°C
Ta= 25°C
Ta= - 25°C
0.1
0.01
10
0
1
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
VGS= -4.5V
Pulsed
10
1
FORWARD TRANSFER ADMITTANCE :
|Yfs| [S]
10
DRAIN-CURRENT : -ID [A]
Fig.7 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅳ)
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c 2009 ROHM Co., Ltd. All rights reserved.
○
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
10
10
0.1
Resistance vs. Drain Current(Ⅲ)
10
Ta= -25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1
0.1
10
DRAIN-CURRENT : -ID [A]
VDS= -10V
Pulsed
1
1
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current(Ⅱ)
10
4
100
DRAIN-CURRENT : -ID [A]
100
3
Fig.2 Typical output characteristics(Ⅱ)
Fig.5 Static Drain-Source On-State
Ta=125°C
Ta=75°C
Ta=25°C
Ta= -25°C
2
GATE-SOURCE VOLTAGE : -VGS[V]
1
Resistance vs. Drain Current(Ⅰ)
0.1
Ta= 125°C
Fig.3 Typical Transfer Characteristics
0.1
DRAIN-CURRENT : -ID [A]
VGS= -4.0V
Pulsed
1
DRAIN-SOURCE VOLTAGE : -VDS[V]
VGS= -10V
Pulsed
Fig.4 Static Drain-Source On-State
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
6
10
0.1
1000
4
100
10
VDS= -10V
Pulsed
0.001
0
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
0
REVERSE DRAIN CURRENT : -Is [A]
DRAIN CURRENT : -ID [A]
2.5
10
Ta=25°C
Pulsed
-10V
-4.5V
-3.6V
2.5
DRAIN CURRENT : -ID [A]
-10V
-4.5V
DRAIN CURRENT : -ID [A]
3
VGS=0V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=-25°C
1
0.1
0.01
1
DRAIN-CURRENT : -ID [A]
Fig.8 Forward Transfer Admittance
vs. Drain Current
3/4
10
0
0.2
0.4
0.6
0.8
1
1.2
SOURCE-DRAIN VOLTAGE : -VSD [V]
Fig.9 Reverse Drain Current
vs. Sourse-Drain Voltage
2009.04 - Rev.A
Data Sheet
RRR030P03
1000
tf
ID = -1.5A
ID = -3.0A
200
100
100
10
tr
0
10
Ta=25°C
VDD = -15V
VGS=-10V
RG=10Ω
Pulsed
td (off)
GATE-SOURCE VOLTAGE : -VGS [V]
Ta=25°C
Pulsed
SWITCHING TIME : t [ns]
STATIC DRAIN-SOURCE ON-STATE
RESISTANCE : RDS(ON)[mΩ]
300
td (on)
1
0
2
4
6
8
10
GATE-SOURCE VOLTAGE : -VGS[V]
0.01
0.1
1
8
6
4
Ta=25°C
VDD = -15V
ID = -3.0A
RG=10Ω
Pulsed
2
0
10
0
DRAIN-CURRENT : -ID [A]
4
6
8
10
TOTAL GATE CHARGE : Qg [nC]
Fig.11 Switching Characteristics
Fig.10 Static Drain-Source On-State
Resistance vs. Gate Source Voltage
2
Fig.12 Dynamic Input Characteristics
1000
CAPACITANCE : C [pF]
Coss
Ciss
100
Crss
Ta=25°C
f=1MHz
VGS=0V
10
0.01
0.1
1
10
100
DRAIN-SOURCE VOLTAGE : -VDS[V]
Fig.13 Typical Capacitance
vs. Drain-Source Voltage
zMeasurement circuit
VGS
Pulse width
ID
VDS
VGS
10%
50%
RL
D.U.T.
50%
90%
10%
VDS
90%
td(on)
90%
td(off)
tr
ton
Fig.1-1 Switching Time Measurement Circuit
VGS
toff
VG
ID
VDS
Qg
VGS
D.U.T.
RG
tf
Fig.1-2 Switching Waveforms
RL
IG (Const.)
10%
VDD
RG
Qgs
VDD
Qgd
Charge
Fig.2-1 Gate Charge Measurement Circuit
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c 2009 ROHM Co., Ltd. All rights reserved.
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Fig.2-2 Gate Charge Waveform
4/4
2009.04 - Rev.A
Notice
Notes
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The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
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