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Transcript
QS5U26
Transistor
2.5V Drive Pch+SBD MOSFET
QS5U26
zStructure
Silicon P-channel MOSFET
Schottky Barrier DIODE
zDimensions (Unit : mm)
TSMT5
1.0MAX
2.9
1.9
0.95 0.95
(5)
(4)
(2)
(3)
0.7
1.6
2.8
(1)
0~0.1
0.3~0.6
zFeatures
1) The QS5U26 combines Pch MOSFET with
a Schottky barrier diode in a TSMT5 package.
2) Low on-state resistance with fast switching.
3) Low voltage drive (2.5V).
4) Built-in schottky barrier diode has low forward voltage.
0.85
0.4
0.16
Each lead has same dimensions
Abbreviated symbol : U26
zApplications
Switching
zPackaging specifications
Package
Type
Code
Basic ordering unit (pieces)
zEquivalent circuit
Taping
(5)
(4)
TR
3000
∗2
QS5U26
∗1
(1)
∗1 ESD protection diode
∗2 Body diode
(2)
(3)
(1)Gate
(2)Source
(3)Anode
(4)Cathode
(5)Drain
Rev.B
1/4
QS5U26
Transistor
zAbsolute maximum ratings (Ta=25°C)
<MOSFET>
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Channel temperature
Power Dissipation
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
Tch
PD ∗3
Limits
−20
±12
±1.5
±6.0
−0.75
−3.0
150
Unit
V
V
A
A
A
A
°C
0.9
W / ELEMENT
Limits
30
20
0.5
2.0
150
Unit
V
V
A
A
°C
0.7
W / ELEMENT
<Di >
Parameter
Symbol
VRM
VR
IF
IFSM ∗2
Tj
Repetitive peak reverse voltage
Reverse voltage
Forward current
Forward current surge peak
Junction temperature
Power Dissipation
PD ∗3
<MOSFET AND Di >
Parameter
Total power dissipatino
Symbol
PD ∗3
Limits
1.25
Tstg
−55 to 150
Range of strage temperature
Unit
W / TOTAL
°C
∗1 Pw≤10µs, Duty cycle≤1% ∗2 60Hz • 1cyc. ∗3 Mounted on a ceramic board.
zElectrical characteristics (Ta=25°C)
<MOSFET>
Parameter
Symbol Min.
Gate-source leakage
−
IGSS
Drain-source breakdown voltage V(BR) DSS −20
Zero gate voltage drain current
IDSS
−
Gate threshold voltage
VGS (th) −0.7
−
Static drain-source on-starte
∗
RDS (on)
−
resistance
−
Forward transfer admittance
Yfs ∗ 1.0
Input capacitance
Ciss
−
Coss
Output capacitance
−
Crss
Reverse transfer capacitance
−
td (on) ∗
Turn-on delay time
−
tr ∗
Rise time
−
td (off) ∗
Turn-off delay time
−
tf ∗
Fall time
−
Total gate charge
−
Qg
Qgs
−
Gate-source charge
−
Gate-drain charge
Qgd
Typ.
−
−
−
−
160
180
260
−
325
60
40
10
10
35
10
4.2
1.0
1.1
Max.
±10
−
−1
−2.0
200
240
340
−
−
−
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
mΩ
mΩ
mΩ
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Conditions
VGS=±12V, VDS=0V
ID=−1mA, VGS=0V
VDS=−20V, VGS=0V
VDS=−10V, ID=−1mA
ID=−1.5A, VGS=−4.5V
ID=−1.5A, VGS=−4V
ID=−0.75A, VGS=−2.5V
VDS=−10V, ID=−0.75A
VDS=−10V
VGS=0V
f=1MHz
ID=−0.75A
VDD −15V
VGS=−4.5V
RL=20Ω
RG=10Ω
VDD −15V
VGS=−4.5V
ID=−1.5A
∗ Pulsed
<Body diode (source−drain)>
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
−1.2
Unit
V
Conditions
IS=−0.75A, VGS=0V
Symbol
Min.
−
−
−
Typ.
−
−
−
Max.
0.36
0.47
100
Unit
V
V
µA
IF=0.1A
IF=0.5A
VR=20V
<Di >
Parameter
Forward voltage
VF
Reverse current
IR
Conditions
Rev.B
2/4
QS5U26
Transistor
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
0.01
0.001
0
0.5
1
1.5
2
2.5
3
3.5
4
GATE-SOURCE VOLTAGE : −VGS (V)
1000
VGS=−2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
100
10
0.1
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.1 Typical Transfer Characteristics
10
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
10
0.1
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
0.1
0.01
0
0.5
1
1.5
2
100
Ta=125°C
Ta=75°C
Ta=25°C
Ta=−25°C
10
0.1
1
10
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current (Ι)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙ)
400
Ta=25°C
Pulsed
ID=−0.75A
ID=−1.5A
350
300
250
200
150
100
50
0
0
2
4
6
8
10
1000
12
Ta=25°C
Pulsed
VGS=−2.5V
VGS=−4.0V
VGS=−4.5V
100
10
0.1
1
10
GATE-SOURCE VOLTAGE : −VGS (V)
DRAIN CURRENT : −ID (A)
Fig.5 Static Drain-Source On-State
Resistance vs. Gate-Source
Voltage
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current ( )
10000
VGS=0V
Pulsed
CAPACITANCE : C (pF)
REVERCE DRAIN CURRENT : −IDR (A)
10
10
VGS=−4V
Pulsed
DRAIN CURRENT : −ID (A)
DRAIN CURRENT : −ID (A)
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current (ΙΙΙ)
1
1000
DRAIN CURRENT : −ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
VGS=−4.5V
Pulsed
1000
Ta=25°C
f=1MHZ
VGS=0V
SWITCHING TIME : t (ns)
VDS=−10V
Pulsed
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : −ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
1000
Ciss
100
Coss
Crss
10
0.01
0.1
1
10
100
Ta=25°C
VDD=−15V
VGS=−4.5V
RG=10Ω
Pulsed
100
tf
td(off)
td(on)
10
tr
1
0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : −VSD (V)
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
Fig.7 Reverse Drain Current vs.
Source-Drain Current
Fig.8 Typical Capacitance vs.
Drain-Source Voltage
Fig.9 Switching Characteristics
Rev.B
3/4
QS5U26
Transistor
100
REVERSE CURRENT : IR (mA)
FORWARD CURRENT : IF (mA)
1000
125°C
75°C
25°C
−25°C
100
10
1
0.1
0
0.1
0.2
0.3
0.4
0.5
10
125°C
1
75°C
0.1
25°C
0.01
−25°C
0.001
0.0001
0
10
20
30
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.10 Forward Current
vs. Forward Voltage
Fig.11 Reverse Current
vs. Reverse Voltage
40
zNotice
SBD has a large reverse leak current compared to other type of diode. Therefore; it would raise a junction temperature,
and increase a reverse power loss. Further rise of inside temperature would cause a thermal runaway.
This built-in SBD has low VF characteristics and therefore, higher leak current. Please consider enough the surrounding
temperature, generating heat of MOSFET and the reverse current.
Rev.B
4/4
Appendix
Notes
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM
CO.,LTD.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you
wish to use any such Product, please be sure to refer to the specifications, which can be obtained from ROHM
upon request.
Examples of application circuits, circuit constants and any other information contained herein illustrate the
standard usage and operations of the Products. The peripheral conditions must be taken into account when
designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document. However, should
you incur any damage arising from any inaccuracy or misprint of such information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and examples of
application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or
exercise intellectual property or other rights held by ROHM and other parties. ROHM shall bear no responsibility
whatsoever for any dispute arising from the use of such technical information.
The Products specified in this document are intended to be used with general-use electronic equipment or
devices (such as audio visual equipment, office-automation equipment, communication devices, electronic
appliances and amusement devices).
The Products are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a Product may fail or
malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard against the
possibility of physical injury, fire or any other damage caused in the event of the failure of any Product, such as
derating, redundancy, fire control and fail-safe designs. ROHM shall bear no responsibility whatsoever for your
use of any Product outside of the prescribed scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or system
which requires an extremely high level of reliability the failure or malfunction of which may result in a direct
threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment,
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responsibility in any way for use of any of the Products for the above special purposes. If a Product is intended
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Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
ROHM Customer Support System
www.rohm.com
Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev3.0