Download RSS065N06

RSS065N06
Transistors
4V Drive Nch MOSFET
RSS065N06
zStructure
Silicon N-channel MOSFET
zDimensions (Unit : mm)
SOP8
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small Surface Mount Package (SOP8).
zApplication
Switching
Each lead has same dimensions
zPackaging specifications
Package
Type
zEquivalent circuit
(8)
Taping
(7)
(6)
(5)
(8) (7) (6) (5)
TB
Code
Basic ordering unit (pieces)
2500
RSS065N06
∗2
(1) (2) (3) (4)
∗1
(1)
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(4)
(1)Source
(2)Source
(3)Source
(4)Gate
(5)Drain
(6)Drain
(7)Drain
(8)Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Source current
(Body diode)
Continuous
Pulsed
Continuous
Pulsed
Total power dissipatino
Channel temperature
Range of storage temperature
Symbol
Limits
VDSS
60
20
VGSS
±6.5
ID
±26
IDP ∗1
1.6
IS
26
ISP ∗1
2.0
PD ∗2
Tch
150
Tstg
−55 to +150
Unit
V
V
A
A
A
A
W
°C
°C
∗1 Pw≤10μs, Duty cycle≤1%
∗2 Mounted on a ceramic board.
zThermal resistance
Parameter
Channel to ambient
∗ Mounted on a ceramic board.
Symbol
Rth (ch-A) ∗
Limits
62.5
Unit
°C / W
1/4
RSS065N06
Transistors
zElectrical characteristics (Ta = 25°C)
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
60
−
1.0
−
−
−
4
−
−
−
−
−
−
−
−
−
−
Typ.
−
−
−
−
24
28
31
−
900
200
100
13
25
60
20
11
2
4
Max.
10
−
1
2.5
37
44
48
−
−
−
−
−
−
−
−
16
−
−
Unit
μA
V
μA
V
mΩ
Conditions
VGS=20V, VDS=0V
ID=1mA, VGS=0V
VDS=60V, VGS=0V
VDS=10V, ID=1mA
ID=6.5A, VGS=10V
ID=6.5A, VGS=4.5V
ID=6.5A, VGS=4.0V
ID=6.5A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=3.3A, VDD 30V
VGS=10V
RL=9.1Ω
RG=10Ω
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
ID=6.5A, VDD 30V
VGS=5V
RL=4.6Ω, RG=10Ω
Unit
V
Conditions
IS=1.6A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta = 25°C)
Parameter
Forward voltage
Symbol
VSD
∗
Min.
−
Typ.
−
Max.
1.2
∗Pulsed
2/4
RSS065N06
Transistors
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
10
1
0.01
GATE-SOURCE VOLTAGE : VGS (V)
100
VGS=4V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
10
1
0.01
0.1
1
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.1 Typical Transfer Characteristics
1000
GATE-SOURCE VOLTAGE : VGS (V)
SWITCHING TIME : t (ns)
100
tr
td(on)
1
0.01
0.1
1
10
DRAIN CURRENT : ID (A)
Fig.7 Switching Characteristics
100
10
1
0.01
0.1
1
Fig.3 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙ)
10000
0
5
Ta=25°C
f=1MHz
VGS=0V
Ta=25°C
Pulsed
10
Ciss
1000
Coss
100
Crss
10
0.01
15
0.1
1
10
100
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Fig.6 Typical Capacitance
vs. Drain-Source Voltage
10
5
0
10
Fig.2 Static Drain-Source
On-State Resistance
vs. Drain Current(Ι)
Ta=25°C
VDD=30V
ID=6.5A
RG=10Ω
Pulsed
0
VGS=4.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
DRAIN CURRENT : ID (A)
50
0
1000
DRAIN CURRENT : ID (A)
10
td(off)
10
10
ID=3.25A
10
Ta=25°C
VDD=30V
VGS=10V
RG=10Ω
Pulsed
tf
1
ID=6.5A
Fig.4 Static Drain-Source
On-State Resistance
vs. Drain Current(ΙΙΙ)
1000
0.1
100
DRAIN CURRENT : ID (A)
10000
VGS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
100
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
1
1000
CAPACITANCE : C (pF)
VDS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
SOURCE CURRENT : IS (A)
DRAIN CURRENT : ID (A)
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
zElectrical characteristic curves
5
10
15
20
VGS=0V
Pulsed
1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.0
0.5
1.0
1.5
TOTAL GATE CHARGE : Qg (nC)
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.8 Dynamic Input Characteristics
Fig.9 Source Current vs.
Source-Drain Voltage
3/4
RSS065N06
Transistors
zMeasurement circuit
Pulse Width
VGS
ID
VDS
90%
50%
10%
VGS
RL
VDS
50%
10%
D.U.T.
10%
RG
VDD
90%
td(on)
ton
Fig.10 Switching Time Test Circuit
90%
td(off)
tr
tr
toff
Fig.11 Switching Time Waveforms
VG
VGS
ID
VDS
RL
IG (Const.)
D.U.T.
Qg
VGS
Qgs
RG
Qgd
VDD
Charge
Fig.12 Gate Charge Test Circuit
Fig.13 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact your nearest sales office.
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www.rohm.com
Copyright © 2007 ROHM CO.,LTD.
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Contact us : webmaster@ rohm.co. jp
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Appendix1-Rev2.0