Download QS6K1

QS6K1
Transistors
2.5V Drive Nch+Nch MOS FET
QS6K1
zExternal dimensions (Unit : mm)
zStructure
Silicon N-channel
MOS FET
TSMT6
1.0MAX
2.9
1.9
0.95 0.95
zFeatures
1) Low on-resistance.
2) Built-in G-S Protection Diode.
3) Small and Surface Mount Package (TSMT6).
(5)
0.85
0.7
(4)
1.6
2.8
(6)
0~0.1
0.3~0.6
(2)
(1)
(3)
1pin mark
0.16
0.4
Each lead has same dimensions
zApplication
Power switching, DC / DC converter.
Abbreviated symbol : K01
zEquivalent circuit
zPackaging specifications
(6)
Package
∗2
TR
Code
Type
(5)
(4)
Basic ordering unit (pieces)
(4)
(1)
(2)
(3)
3000
∗1
(1)
zAbsolute maximum ratings (Ta=25°C)
<It is the same ratings for the Tr1 and Tr2>
Parameter
Drain-source voltage
Gate-source voltage
Source current
(Body diode)
(5)
∗2
QS6K1
Drain current
(6)
Taping
Continuous
Pulsed
Continuous
Pulsed
Total power dissipation (TC=25°C)
Channel temperature
Storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
IS
ISP ∗1
PD
Tch
Tstg
∗2
∗1
(2)
(3)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
Limits
30
12
±1.0
±4.0
0.8
4.0
1.25
0.9
150
−55 to +150
Unit
V
V
A
A
A
A
W / TOTAL
W / ELEMENT
°C
°C
(1) Tr1 Gate
(2) Tr2 Source
(3) Tr2 Gate
(4) Tr2 Drain
(5) Tr1 Source
(6) Tr1 Drain
∗A protection diode is included between the gate and
the source terminals to protect the diode against static
electricity when the product is in use. Use the protection
circuit when the fixed voltages are exceeded.
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Mounted on a ceramic board
zThermal resistance
Parameter
Channel to ambient
Symbol
Rth (ch-a)
∗
Limits
100
139
Unit
°C / W / TOTAL
°C / W / ELEMENT
∗ Mounted on a ceramic board
Rev.B
1/3
QS6K1
Transistors
zElectrical characteristics (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Symbol
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS
Zero gate voltage drain current
IDSS
Gate threshold voltage
VGS (th)
Static drain-source on-state
resistance
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
∗
RDS (on)
Yfs
Ciss
Coss
Crss
td (on)
tr
td (off)
tf
Qg
Qgs
Qgd
∗
∗
∗
∗
∗
∗
∗
∗
Min.
−
30
−
0.5
−
−
−
1.0
−
−
−
−
−
−
−
−
−
−
Typ.
Max.
−
−
−
−
170
180
260
−
77
25
15
7
7
15
6
1.7
0.4
0.4
10
−
1
1.5
238
252
364
−
−
−
−
−
−
−
−
2.4
−
−
Unit
µA
V
µA
V
Conditions
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
VGS=12V, VDS=0V
ID=1mA, VGS=0V
VDS=30V, VGS=0V
VDS=10V, ID=1mA
ID=1.0A, VGS=4.5V
ID=1.0A, VGS=4.0V
ID=1.0A, VGS=2.5V
ID=1.0A, VDS=10V
VDS=10V
VGS=0V
f=1MHz
ID=500mA, VDD 15V
VGS=4.5V
RL=30.0Ω
RG=10Ω
VDD 15V
VGS=4.5V
ID=1.0A
Unit
V
Conditions
IS=3.2A, VGS=0V
mΩ
∗Pulsed
zBody diode characteristics (Source-Drain) (Ta=25°C)
<It is the same characteristics for the Tr1 and Tr2>
Parameter
Forward voltage
Symbol
VSD ∗
Min.
−
Typ.
−
Max.
1.2
∗Pulsed
Rev.B
2/3
QS6K1
Transistors
zElectrical characteristic curves
1000
Ciss
Coss
Crss
1
0.01
0.1
1
10
td (off)
10
td (on)
tr
1
0.01
100
0.1
DRAIN-SOURCE VOLTAGE : VDS (V)
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
0.01
0.001
0.0
0.5
1.0
1.5
2.0
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
DRAIN CURRENT : ID (A)
1
VDS=10V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0
0
10
2
ID=1A
400
ID=0.5A
300
200
100
0
2
4
6
8
10
12
VGS=0V
Pulsed
14
1
100
0.01
0.01
0.0
16
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
1
0.5
1.0
10
1.5
SOURCE-DRAIN VOLTAGE : VSD (V)
Fig.6 Source Current vs.
Source-Drain Voltage
10000
VGS=4V
Pulsed
0.1
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
1000
3
Fig.3 Dynamic Input Characteristics
500
0
1
TOTAL GATE CHARGE : Qg (nC)
10
10000
VGS=4.5V
Pulsed
0.1
1
GATE-SOURCE VOLTAGE : VGS (V)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
100
0.01
2
Ta=25°C
Pulsed
600
Fig.4 Typical Transfer Characteristics
1000
3
10
700
GATE-SOURCE VOLTAGE : VGS (V)
10000
4
Fig.2 Switching Characteristics
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
10
1
5
DRAIN CURRENT : ID (A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
10
tf
100
Ta=25°C
7 VDD=15V
ID=1A
6 RG=10Ω
Pulsed
GATE-SOURCE VOLTAGE : VGS (V)
100
8
Ta=25°C
VDD=15V
VGS=4.5V
RG=10Ω
Pulsed
SOURCE CURRENT : Is (A)
Ta=25°C
f=1MHz
VGS=0V
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1000
1000
100
0.01
VGS=2.5V
Pulsed
Ta=125°C
Ta=75°C
Ta=25°C
Ta= −25°C
0.1
1
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.7 Static Drain-Source
On-State Resistance
vs. Drain Current (Ι)
Fig.8 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙ)
Fig.9 Static Drain-Source
On-State Resistance
vs. Drain Current (ΙΙΙ)
Rev.B
10
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1