Download RSU002P03

RSU002P03
Transistors
4V Drive Pch MOSFET
RSU002P03
zStructure
Silicon P-channel MOSFET
zDimensions (Unit : mm)
UMT3
2.0
zFeatures
1) Low On-resistance
2) 4V drive
0.9
0.2
0.3
0.7
2.1
1.25
(3)
0.1Min.
(1)
(2)
0.65 0.65
0.15
1.3
zApplications
Switching
(1) Source
(2) Gate
Abbreviated symbol : WP
(3) Drain
zPackaging specifications
zInner circuit
Package
Type
Each lead has same dimensions
Taping
Code
T106
Basic ordering unit (pieces)
3000
(3)
RSU002P03
(2)
∗2
∗1
(1)
∗1 ESD PROTECTION DIODE
∗2 BODY DIODE
(1) Source
(2) Gate
(3) Drain
zAbsolute maximum ratings (Ta=25°C)
Parameter
Drain-source voltage
Gate-source voltage
Drain current
Continuous
Pulsed
Total power dissipation
Channel temperature
Range of storage temperature
Symbol
VDSS
VGSS
ID
IDP ∗1
PD ∗2
Tch
Tstg
Limits
−30
±20
±0.25
±0.5
0.2
150
−55 to +150
Unit
V
V
A
A
W
°C
°C
Symbol
Rth(ch-a) ∗
Limits
625
Unit
°C/W
∗1 Pw≤10µs, Duty cycle≤1%
∗2 Each terminal mounted on a recommended land
zThermal resistance
Parameter
Channel to ambient
∗ Each terminal mounted on a recommended land
Rev.A
1/4
RSU002P03
Transistors
zElectrical characteristics (Ta=25°C)
Parameter
Symbol Min.
−
Gate-source leakage
IGSS
Drain-source breakdown voltage V(BR) DSS −30
IDSS
Zero gate voltage drain current
−
Gate threshold voltage
VGS (th) −1.0
−
Static drain-source on-state
RDS (on)∗
−
resistance
−
Yfs ∗ 0.2
Forward transfer admittance
Ciss
−
Input capacitance
Coss
−
Output capacitance
Crss
−
Reverse transfer capacitance
td (on) ∗
−
Turn-on delay time
tr ∗
−
Rise time
td (off) ∗
−
Turn-off delay time
tf ∗
−
Fall time
Typ.
−
−
−
−
0.9
1.4
1.6
−
30
4
5
8
5
30
40
Max.
±10
−
−1
−2.5
1.4
2.1
2.4
−
−
−
−
−
−
−
−
Unit
µA
V
µA
V
Ω
Ω
Ω
S
pF
pF
pF
ns
ns
ns
ns
Conditions
VGS=±20V, VDS=0V
ID= −1mA, VGS=0V
VDS= −30V, VGS=0V
VDS= −10V, ID= −1mA
ID= −0.25A, VGS= −10V
ID= −0.15A, VGS= −4.5V
ID= −0.15A, VGS= −4V
VDS= −10V, ID= −0.15A
VDS= −10V
VGS=0V
f=1MHz
VDD −15V
ID= −0.15A
VGS= −10V
RL=100Ω
RG=10Ω
Unit
V
IS= −0.1A, VGS=0V
∗Pulsed
zBody diode characteristics (Source-drain) (Ta=25°C)
Parameter
Forward voltage
Symbol
VSD
Min.
−
Typ.
−
Max.
−1.2
Conditions
Rev.A
2/4
RSU002P03
Transistors
zElectrical characteristics curves
100
Crss
Coss
0.1
1
10
100
td (off)
10
td (on)
tr
1
0.01
100
DRAIN-SOURCE VOLTAGE : −VDS (V)
DRAIN CURRENT : −ID (A)
1
0.1
VDS= −10V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.01
0.001
1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (mΩ)
Fig.1 Typical Capacitance
vs. Drain-Source Voltage
3
2
1
0
Ta=125°C
75°C
25°C
−25°C
1
1
DRAIN CURRENT : −ID (A)
Fig.7 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι )
0.2
0.4
0.6
0.8
TOTAL GATE CHARGE : Qg (nC)
Fig.2 Switching Characteristics
Fig.3 Dynamic Input Characteristics
1
15
ID= −250mA
10
ID= −125mA
5
0
0
1
2
3
4
5
10
6
7
8
9
10
VGS= −4.5V
Pulsed
1
0.1
VGS= 0V
Pulsed
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
SOURCE-DRAIN VOLTAGE : −VSD (V)
Ta=125°C
75°C
25°C
−25°C
0.1
0.01
1
DRAIN CURRENT : −ID (A)
Fig.6 Reverse Drain Current vs.
Source-Drain Voltage
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
4
GATE-SOURCE VOLTAGE : −VGS (V)
VGS= −10V
Pulsed
0.1
5
1
Ta=25°C
Pulsed
Fig.4 Typical Transfer Characteristics
0.1
0.01
RG=10Ω
6 Pulsed
0
0.1
20
GATE-SOURCE VOLTAGE : −VGS (V)
10
7 ID= −250mA
1
DRAIN CURRENT : −ID (A)
Fig.8 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙ )
10
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
1
0.01
tf
Ta=25°C
VDD= −15V
GATE-SOURCE VOLTAGE : −VGS (V)
10
Ta=25°C
VDD= −15V
VGS= −10V
RG=10Ω
Pulsed
REVERSE DRAIN CURRENT : −IDR (A)
Ciss
8
1000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
Ta=25°C
f=1MHz
VGS=0V
VGS= −4V
Pulsed
Ta=125°C
75°C
25°C
−25°C
1
0.1
0.01
0.1
1
DRAIN CURRENT : −ID (A)
Fig.9 Static Drain-Source
On-State Resistance vs.
Drain current ( ΙΙΙ )
Rev.A
3/4
RSU002P03
Transistors
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE : RDS (on) (Ω)
10
Ta=25°C
Pulsed
VGS= −4.0V
−4.5V
−10V
1
0
0.01
0.1
1
DRAIN CURRENT : −ID (A)
Fig.10 Static Drain-Source
On-State Resistance vs.
Drain current ( Ι )
Rev.A
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1