TPS75003 - Texas Instruments
... the Xilinx Spartan-3, Spartan-3E and Spartan-3L. Two non-synchronous buck controllers can be configured to supply up to 3A for both CORE and I/O rails. A low dropout linear regulator powers auxiliary rails up to 300mA. All channels have independent enable and soft-start, allowing control of inrush c ...
... the Xilinx Spartan-3, Spartan-3E and Spartan-3L. Two non-synchronous buck controllers can be configured to supply up to 3A for both CORE and I/O rails. A low dropout linear regulator powers auxiliary rails up to 300mA. All channels have independent enable and soft-start, allowing control of inrush c ...
Failure Mechanisms For Transient Voltage Suppressors
... applications, this same needed information for quantifying transients and their source is not well defined due to the obscure overall nature of various possible transient events. This can also eventually generate other questions in what failure mechanisms exist for silicon p-n junction Transient Vol ...
... applications, this same needed information for quantifying transients and their source is not well defined due to the obscure overall nature of various possible transient events. This can also eventually generate other questions in what failure mechanisms exist for silicon p-n junction Transient Vol ...
and Dual-Channel Antenna LDO With Current
... Output of current sense for sensing. To set the SENSE output voltage level, connect a resistor between this pin and GND. In addition, connect a 1-µF capacitor from this pin to GND for frequency compensation of the current-sense loop. Short this pin to GND if not used. Output of current sense for sen ...
... Output of current sense for sensing. To set the SENSE output voltage level, connect a resistor between this pin and GND. In addition, connect a 1-µF capacitor from this pin to GND for frequency compensation of the current-sense loop. Short this pin to GND if not used. Output of current sense for sen ...
Optimization of Integrated Transistors for Very High Frequency DC-DC Converters Please share
... into the VHF regime, conduction loss remains significant and sets the minimum device area necessary to process a given amount of power. In contrast to conduction loss, the frequency-dependent losses behave differently from the hard-switching case. With overlap and capacitive discharge mitigated, wha ...
... into the VHF regime, conduction loss remains significant and sets the minimum device area necessary to process a given amount of power. In contrast to conduction loss, the frequency-dependent losses behave differently from the hard-switching case. With overlap and capacitive discharge mitigated, wha ...
63A, 600V, UFS Series N-Channel IGBT with Anti-Parallel
... should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, indus ...
... should be exercised to assure that the static charge built in the handler’s body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, indus ...
- aes journals
... In order to minimize the size of necessary reactive power components, we have used relatively high switching frequency: 20 kHz in on module and 35 KHz in another module .By using latest technology within IGBT’s we have been able to reduce the switching loss. Hard switching is opposed to soft switchi ...
... In order to minimize the size of necessary reactive power components, we have used relatively high switching frequency: 20 kHz in on module and 35 KHz in another module .By using latest technology within IGBT’s we have been able to reduce the switching loss. Hard switching is opposed to soft switchi ...
Power Switching Devices and their Static Electrical Characteristics
... silicon to the positive potential metal, passing over the barrier potential. Unlike the bipolar pn diode, only electrons are carriers, hence the Schottky barrier diode is a unipolar device. The forward on-state voltage drop is dominated by and proportional to the barrier potential Φb, while unfortun ...
... silicon to the positive potential metal, passing over the barrier potential. Unlike the bipolar pn diode, only electrons are carriers, hence the Schottky barrier diode is a unipolar device. The forward on-state voltage drop is dominated by and proportional to the barrier potential Φb, while unfortun ...
Module P4.1 DC circuits and currents
... become detached from metal atoms, are free to move through the metal. It is the movement of these ‘free’ electrons that will be responsible for the current flowing through the metal. The positive ions that are left behind when atoms lose electrons can only oscillate about fixed positions in a regula ...
... become detached from metal atoms, are free to move through the metal. It is the movement of these ‘free’ electrons that will be responsible for the current flowing through the metal. The positive ions that are left behind when atoms lose electrons can only oscillate about fixed positions in a regula ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.