Download SOT-23 Plastic-Encapsulate Transistors CJ3420

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
SOT-23 Plastic-Encapsulate Transistors
CJ3420
N-Channel Enhancement Mode Field Effect Transistor
SOT-23
DESCRIPTION
The CJ3420 uses advanced trench technology to provide excellent
RDS(on).This device is suitable for use as a uni-directional or bi-directional
1. GATE
load switch.
2. SOURCE
3. DRAIN
BDTIC
MARKING: R20
Maximum ratings (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain-Source Voltage
VDS
20
Gate-Source Voltage
VGS
±12
Continuous Drain Current
ID
6
Pulsed Drain Current
IDM
25
Maximum Body-Diode Continuous Current
IS
2
Power Dissipation
PD
0.35
W
RθJA
357
℃/W
Junction Temperature
TJ
150
Storage Temperature
Tstg
-55 ~+150
Thermal Resistance from Junction to Ambient
V
A
℃
B,May,2011
www.BDTIC.com/jcst
Electrical characteristics (Ta=25℃ unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =250µA
Gate-source leakage current
IGSS
VDS =0V, VGS =±12V
±100
nA
Zero gate voltage drain current
IDSS
VDS =16V, VGS =0V
1.0
µA
0.7
1.0
V
VGS =10V, ID =6.0A
19
24
VGS =4.5V, ID =5.0A
22
27
VGS =2.5V, ID =4.0A
35
42
Gate threshold voltage
VGS(th)
Drain-source on-state resistance
RDS(on)
VDS =VGS, ID =250µA
20
0.5
V
74
VGS =1.8V, ID =2.0A
Diode forward voltage
VSD
VGS =0V,IS=1A
Forward transconductance
gfS
VDS =5V, ID =3.8A
mΩ
0.75
4
1
V
S
BDTIC
DYNAMIC PARAMETERS*
Input capacitance
Ciss
Output capacitance
Coss
Reverse transfer capacitance
Crss
Gate resistance
Rg
630
VDS =10V,VGS =0V,f =1MHz
164
pF
137
VDS =0V,VGS =0V,f =1MHz
1.5
Ω
SWITCHING PARAMETERS*
Turn-on delay time
td(on)
Rise time
Turn-off delay time
Fall time
5.5
tr
VGS=5V,VDS=10V,
14
td(off)
RL=1.7Ω,RGEN=6Ω
29
tf
ns
10.2
*These parameters have no way to verify.
B,May,2011
www.BDTIC.com/jcst
Typical Characteristics
CJ3420
Transfer Characteristics
Output Characteristics
20
5
VGS=10V
4V
3V
2.5V
Ta=25℃
Ta=25℃
Pulsed
Pulsed
4
(A)
10
5
ID
DRAIN CURRENT
ID
2V
3
DRAIN CURRENT
(A)
15
2
1
VGS=1.5V
BDTIC
0
0
1
2
3
4
DRAIN TO SOURCE VOLTAGE
RDS(ON)
——
VDS
0
0.0
5
(V)
0.5
1.0
1.5
GATE TO SOURCE VOLTAGE
RDS(ON) ——
ID
70
VGS
2.0
(V)
VGS
90
Ta=25℃
Ta=25℃
Pulsed
Pulsed
60
(m)
(m)
VGS=1.8V
60
RDS(ON)
40
ON-RESISTANCE
ON-RESISTANCE
RDS(ON)
50
VGS=2.5V
30
VGS=4.5V
ID=6A
30
20
VGS=10V
10
0
0
2
4
6
DRAIN CURRENT
IS
——
ID
8
10
(A)
0
2
VSD
10
Ta=25℃
Pulsed
0.1
SOURCE CURRENT
IS
(A)
1
0.01
1E-3
1E-4
1E-5
0.0
0.2
0.4
0.6
SOURCE TO DRAIN VOLTAGE
0.8
VSD
4
GATE TO SOURCE VOLTAGE
1.0
(V)
www.BDTIC.com/jcst
6
VGS
(V)
8