• Study Resource
  • Explore Categories
    • Arts & Humanities
    • Business
    • Engineering & Technology
    • Foreign Language
    • History
    • Math
    • Science
    • Social Science

    Top subcategories

    • Advanced Math
    • Algebra
    • Basic Math
    • Calculus
    • Geometry
    • Linear Algebra
    • Pre-Algebra
    • Pre-Calculus
    • Statistics And Probability
    • Trigonometry
    • other →

    Top subcategories

    • Astronomy
    • Astrophysics
    • Biology
    • Chemistry
    • Earth Science
    • Environmental Science
    • Health Science
    • Physics
    • other →

    Top subcategories

    • Anthropology
    • Law
    • Political Science
    • Psychology
    • Sociology
    • other →

    Top subcategories

    • Accounting
    • Economics
    • Finance
    • Management
    • other →

    Top subcategories

    • Aerospace Engineering
    • Bioengineering
    • Chemical Engineering
    • Civil Engineering
    • Computer Science
    • Electrical Engineering
    • Industrial Engineering
    • Mechanical Engineering
    • Web Design
    • other →

    Top subcategories

    • Architecture
    • Communications
    • English
    • Gender Studies
    • Music
    • Performing Arts
    • Philosophy
    • Religious Studies
    • Writing
    • other →

    Top subcategories

    • Ancient History
    • European History
    • US History
    • World History
    • other →

    Top subcategories

    • Croatian
    • Czech
    • Finnish
    • Greek
    • Hindi
    • Japanese
    • Korean
    • Persian
    • Swedish
    • Turkish
    • other →
 
Profile Documents Logout
Upload
Analysis of Amplifier with Nonlinear Device Model
Analysis of Amplifier with Nonlinear Device Model

IDEAL SWITCH
IDEAL SWITCH

AL8807Q Description Pin Assignments
AL8807Q Description Pin Assignments

Quasi-Resonant Full-Wave Zero-Current Switching Buck
Quasi-Resonant Full-Wave Zero-Current Switching Buck

AND9083 - MOSFET Gate-Charge Origin and its Applications
AND9083 - MOSFET Gate-Charge Origin and its Applications

... This is the region where VGS is held at VGP and remains flat. ID clamps to inductor current and VDS clamping effect is gone, MOSFET’s VDS starts to drop. It can be seen from ID−VDS curve (Figure 4) that VGS remains relatively constant at fixed ID with varying VDS. This is the origin of the flat plat ...
TPS51117 Single Synchronous Step-Down
TPS51117 Single Synchronous Step-Down

... Figure 1. PWM Supply Current vs Junction Temperature ...
MAX1573 White LED 1x/1.5x Charge Pump in UCSP and Thin QFN General Description
MAX1573 White LED 1x/1.5x Charge Pump in UCSP and Thin QFN General Description

3-V to 17-V 1-A Step-Down Converter with DCS
3-V to 17-V 1-A Step-Down Converter with DCS

... MOSFET is not allowed to turn on until the device's internal ramp sets an output voltage above the pre-bias voltage. 8.3.3 Power Good (PG) The TPS62160-Q1 has a built in power good (PG) function to indicate whether the output voltage has reached its appropriate level or not. The PG signal can be use ...
TPS61161-Q1 数据资料 dataSheet 下载
TPS61161-Q1 数据资料 dataSheet 下载

RESISTORS FOR MEDICAL APPLICATIONS
RESISTORS FOR MEDICAL APPLICATIONS

Resistors
Resistors

... Rheostats and Potentiometers commonly have a spindle, or shaft, which is rotated. When rotated the resistance changes. It is easy to change the value, but they can be changed accidentally. An example of using a Rheostat would be in a light dimmer circuit. When the spindle is rotated, the amount of c ...
TPS62152-Q1 - Texas Instruments
TPS62152-Q1 - Texas Instruments

... only, which do not imply functional operation of the device at these or any other conditions beyond those indicated under Recommended Operating Conditions. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. All voltages are with respect to network groun ...
DST857BDJ Features Mechanical Data
DST857BDJ Features Mechanical Data

MAX16838 Integrated, 2-Channel, High-Brightness LED Driver with High-Voltage Boost and SEPIC Controller
MAX16838 Integrated, 2-Channel, High-Brightness LED Driver with High-Voltage Boost and SEPIC Controller

AP2552-53(A) - Diodes Incorporated
AP2552-53(A) - Diodes Incorporated

LMR16030 - Texas Instruments
LMR16030 - Texas Instruments

... step down regulator with an integrated high-side MOSFET. With a wide input range from 4.3 V to 60 V, it’s suitable for various applications from industrial to automotive for power conditioning from unregulated sources. The regulator’s quiescent current is 40 µA in Sleep-mode, which is suitable for b ...
AP8802H  60V 1A LED STEP-DOWN CONVERTER Description
AP8802H 60V 1A LED STEP-DOWN CONVERTER Description

Guidance on RCD`s
Guidance on RCD`s

... A socket-outlet incorporating a residual current device (SRCD) provides an alternative to protecting a circuit supplying a socket-outlet by an RCD. The advantage of using an SRCD is that only the circuit that is plugged into the SRCD socket-outlet is disconnected when the SRCD detects an earth fault ...
W_5_Overview
W_5_Overview

... Resistance In CMOS circuits, resistances can either be passive or active. Active resistances are usually the resistance of the transistors when they are biased to operate in linear or saturation region. The passive resistors are designed and implemented with different materials on the chip. ...
Low Input Voltage Step-Up Converter in Thin SOT
Low Input Voltage Step-Up Converter in Thin SOT

... the control circuit properly a startup oscillator starts to operate the switches. During this phase the switching frequency is controlled by the oscillator and the maximum switch current is limited. As soon as the device has built up the output voltage to about 1.8 V, high enough for supplying the c ...
FSB50250UTD Motion SPM 5 Series ®
FSB50250UTD Motion SPM 5 Series ®

INA282-286EVM User`s Guide
INA282-286EVM User`s Guide

... directions. For bi-directional applications, the reference voltage can be set anywhere within the 0V to 5V range specified for the reference input. The voltage applied to the reference pin establishes the output voltage of the device with no input voltage. The output voltage is limited by the supply ...
R5011ANJ
R5011ANJ

IO-Link PHY for Device Nodes (Rev. B)
IO-Link PHY for Device Nodes (Rev. B)

electric circuits - Van Buren Public Schools
electric circuits - Van Buren Public Schools

... Any path along which electrons can flow is a circuit. For a continuous flow of electrons, there must be a complete circuit with no gaps. A gap is usually provided by an electric switch that can be opened or closed to either cut off or allow electron flow. The water analogy is quite useful for gainin ...
< 1 ... 15 16 17 18 19 20 21 22 23 ... 74 >

Memristor



The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.
  • studyres.com © 2026
  • DMCA
  • Privacy
  • Terms
  • Report