Switching of capacitor banks using a SynchroTeq
... SynchroTeq products are perfectly adapted for fast switching of capacitor banks and filters. In many applications such as static VAR compensation (SVC) and STATCOM (static compensators), very rapid switching sequences are required where the operation of the CB cannot be blocked due to the presence o ...
... SynchroTeq products are perfectly adapted for fast switching of capacitor banks and filters. In many applications such as static VAR compensation (SVC) and STATCOM (static compensators), very rapid switching sequences are required where the operation of the CB cannot be blocked due to the presence o ...
Operating instructions K3G175RC0503 - ebm
... → Ensure that no combustible or flammable materials are located close to the fan. ; Inspect the device for visible external damage and the proper function of the protective features before switching it on. ; Check the air flow paths of the fan for foreign objects and remove any that are found. ; App ...
... → Ensure that no combustible or flammable materials are located close to the fan. ; Inspect the device for visible external damage and the proper function of the protective features before switching it on. ; Check the air flow paths of the fan for foreign objects and remove any that are found. ; App ...
AN-4107 Design of Power Factor Correction Circuit Using FAN7527
... of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein ...
... of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein ...
TBU-KE Series
... pad. The exposed solder pads should be defined by a solder mask which matches the pad layout of the TBU® device in size and spacing. It is recommended that they should be the same dimension as the TBU® pads but if smaller solder pads are used, they should be centered on the TBU® package terminal pad ...
... pad. The exposed solder pads should be defined by a solder mask which matches the pad layout of the TBU® device in size and spacing. It is recommended that they should be the same dimension as the TBU® pads but if smaller solder pads are used, they should be centered on the TBU® package terminal pad ...
TPS62684 - Texas Instruments
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolu ...
... Stresses beyond those listed under absolute maximum ratings may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated under recommended operating conditions is not implied. Exposure to absolu ...
Wide Input Voltage, Eco-mode™, Single
... 0.6 V to 5.5 V. The conversion input voltage range is from 3 V up to 28V. The D-CAP™ mode uses the ESR of the output capacitor(s) to sense the device current . One advantage of this control scheme is that it does not require an external phase compensation network. This allows a simple design with a ...
... 0.6 V to 5.5 V. The conversion input voltage range is from 3 V up to 28V. The D-CAP™ mode uses the ESR of the output capacitor(s) to sense the device current . One advantage of this control scheme is that it does not require an external phase compensation network. This allows a simple design with a ...
High-voltage switch using series-connected
... The series operation of self turn-off devices is not easy because of the following reasons: • unequal device switching characteristics; • unequal device leakage current; • unequal stray inductance in the series circuit; • unequal gate drive delay. Fig. 2 shows the typical waveforms of two series-con ...
... The series operation of self turn-off devices is not easy because of the following reasons: • unequal device switching characteristics; • unequal device leakage current; • unequal stray inductance in the series circuit; • unequal gate drive delay. Fig. 2 shows the typical waveforms of two series-con ...
Investigation on the Parallel Operation of Discrete SiC BJTs and JFETs
... or JFET. Parallel operation is an important feature of any semiconductor device in a power module. The gate drive requirements and the current sharing during the dynamic switching impacts the operation of the module and the switch utilization factor of the switches paralleled. SiC switches have posi ...
... or JFET. Parallel operation is an important feature of any semiconductor device in a power module. The gate drive requirements and the current sharing during the dynamic switching impacts the operation of the module and the switch utilization factor of the switches paralleled. SiC switches have posi ...
Unit 2 - GVPCEW
... mechanical transducers due to the ageing and drift of the active components and comparative high cost of electrical transducers and associated signal conditioners. In some cases the accuracy and resolution attainable are not as high as in mechanical transducers. Some of the advantages are: 1. Electr ...
... mechanical transducers due to the ageing and drift of the active components and comparative high cost of electrical transducers and associated signal conditioners. In some cases the accuracy and resolution attainable are not as high as in mechanical transducers. Some of the advantages are: 1. Electr ...
LM117HV/LM317HV 3-Terminal Adjustable Regulator (Rev. D)
... When an output capacitor is connected to a regulator and the input is shorted, the output capacitor will discharge into the output of the regulator. The discharge current depends on the value of the capacitor, the output voltage of the regulator, and the rate of decrease of VIN. In the LM317HV, this ...
... When an output capacitor is connected to a regulator and the input is shorted, the output capacitor will discharge into the output of the regulator. The discharge current depends on the value of the capacitor, the output voltage of the regulator, and the rate of decrease of VIN. In the LM317HV, this ...
TR41.7-09-08-005-2564-AppGuidev5.0
... unique current protection characteristics. Subject 2564 Templates reflect the timecurrent characteristics of overcurrent protectors for specific telecommunication standards. Characteristics of each type protector are provided using “Current-Time Templates”, “Voltage Groups”, “Categories” and Environ ...
... unique current protection characteristics. Subject 2564 Templates reflect the timecurrent characteristics of overcurrent protectors for specific telecommunication standards. Characteristics of each type protector are provided using “Current-Time Templates”, “Voltage Groups”, “Categories” and Environ ...
Resistors - TT Electronics
... The electronic content of devices for medical applications continues to rise steadily as medical science develops new techniques and electronic engineering supplies new solutions. At the same time, these devices are leaving the confines of hospitals and serving the growing community-based and home-b ...
... The electronic content of devices for medical applications continues to rise steadily as medical science develops new techniques and electronic engineering supplies new solutions. At the same time, these devices are leaving the confines of hospitals and serving the growing community-based and home-b ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.