LMR16010 - Texas Instruments
... step down regulator with an integrated high-side MOSFET. With a wide input range from 4.3 V to 60 V, it’s suitable for various applications from industrial to automotive for power conditioning from unregulated sources. The regulator’s quiescent current is 40 µA in Sleep-mode, which is suitable for b ...
... step down regulator with an integrated high-side MOSFET. With a wide input range from 4.3 V to 60 V, it’s suitable for various applications from industrial to automotive for power conditioning from unregulated sources. The regulator’s quiescent current is 40 µA in Sleep-mode, which is suitable for b ...
24-V High Input Voltage, Micropower, 80
... if a current limit occurs and the resulting output voltage is low, excessive power is dissipated across the LDO, resulting in possible damage to the device. 7.3.5 Reverse Current The TPS715A device PMOS-pass transistor has a built-in back diode that conducts current when the input voltage drops belo ...
... if a current limit occurs and the resulting output voltage is low, excessive power is dissipated across the LDO, resulting in possible damage to the device. 7.3.5 Reverse Current The TPS715A device PMOS-pass transistor has a built-in back diode that conducts current when the input voltage drops belo ...
Electricity - School
... Explain how the build up of charge can be dangerous in different situations Describe how the build up of charge can be controlled or prevented Explain how earthing using a conductor can discharge a charged object Describe how the build up of charge can lead to a spark using key terms potential diffe ...
... Explain how the build up of charge can be dangerous in different situations Describe how the build up of charge can be controlled or prevented Explain how earthing using a conductor can discharge a charged object Describe how the build up of charge can lead to a spark using key terms potential diffe ...
TPS65632 Triple-Output AMOLED Display Power Supply (Rev. A)
... 7.3.1 Boost Converter 1 (VPOS) Boost converter 1 uses a fixed-frequency current-mode topology. Its output voltage (VPOS) is programmed at the factory to 4.6 V and cannot be changed by the user. For highest output voltage accuracy, connect the output sense pin (FBS) directly to the positive terminal ...
... 7.3.1 Boost Converter 1 (VPOS) Boost converter 1 uses a fixed-frequency current-mode topology. Its output voltage (VPOS) is programmed at the factory to 4.6 V and cannot be changed by the user. For highest output voltage accuracy, connect the output sense pin (FBS) directly to the positive terminal ...
MC34671, High Input Voltage 600mA Charger for Single-cell
... temperature control loops to regulate the charge current. It has up to a 28V input voltage rating, which makes the handheld device safe even when connected to a wrong AC adapter. The MC34671 requires only two external capacitors and one resistor to build a fully functional charger for spacelimited a ...
... temperature control loops to regulate the charge current. It has up to a 28V input voltage rating, which makes the handheld device safe even when connected to a wrong AC adapter. The MC34671 requires only two external capacitors and one resistor to build a fully functional charger for spacelimited a ...
Single Cell Lithium-Ion Charge Management Controller
... ambient temperature can be realized or a lower value sense resistor could be utilized. Alternatively, different package options can be utilized for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance. Electrical Cons ...
... ambient temperature can be realized or a lower value sense resistor could be utilized. Alternatively, different package options can be utilized for more or less power dissipation. Again, design tradeoffs should be considered to minimize size while maintaining the desired performance. Electrical Cons ...
Hall Effect Devices
... Starting at 9 mm I reversed the process measuring the North pole of the magnet as I got progressively closer, and graphed the result. I was expecting to find a different result than I got. Other than a slight dog-leg at the closest readings I got a fairly linear rate of change. I was expecting the c ...
... Starting at 9 mm I reversed the process measuring the North pole of the magnet as I got progressively closer, and graphed the result. I was expecting to find a different result than I got. Other than a slight dog-leg at the closest readings I got a fairly linear rate of change. I was expecting the c ...
Optimization of Transistors for Very High Frequency dc
... This formulation of VHF device loss is useful for optimization. It predicts device performance in a given circuit based on its parasitic component values (or vice versa). In Equation 1 the non-linear capacitance and resistance elements in the device are approximated as linear. This approximation hol ...
... This formulation of VHF device loss is useful for optimization. It predicts device performance in a given circuit based on its parasitic component values (or vice versa). In Equation 1 the non-linear capacitance and resistance elements in the device are approximated as linear. This approximation hol ...
Critical Conduction Mode (CRM) Buck Converter with Tapped
... discontinuous conduction mode(DCM) with variable switching frequency [1-2]. Even though this CRM control has some merits, the usage is restricted by the increasing switching loss of the active switch as the power capacity or the switching frequency goes up. The relatively small filter inductance of ...
... discontinuous conduction mode(DCM) with variable switching frequency [1-2]. Even though this CRM control has some merits, the usage is restricted by the increasing switching loss of the active switch as the power capacity or the switching frequency goes up. The relatively small filter inductance of ...
Power MOSFET 9 A, 52 V, N-Channel, Logic Level
... Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2). 2. Whe ...
... Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to a FR4 board using 1″ pad size, (Cu area 1.127 in2). 2. Whe ...
GaN FETs in Parallel Using Drain Ferrite Beads and
... As shown in Figure 2, a half-bridge circuit with two devices directly paralleling is presented. To make the gate circuits symmetrical to each device, side-by-side layout is selected. It is seen that the gate loop area increases and switching node connection is longer than back-to-back placement, whi ...
... As shown in Figure 2, a half-bridge circuit with two devices directly paralleling is presented. To make the gate circuits symmetrical to each device, side-by-side layout is selected. It is seen that the gate loop area increases and switching node connection is longer than back-to-back placement, whi ...
Standard Resistors Series - Databook
... The product specifications do not expand or otherwise modify VPG’s terms and conditions of purchase, including but not limited to, the warranty expressed therein. VPG makes no warranty, representation or guarantee other than as set forth in the terms and conditions of purchase. To the maximum extent ...
... The product specifications do not expand or otherwise modify VPG’s terms and conditions of purchase, including but not limited to, the warranty expressed therein. VPG makes no warranty, representation or guarantee other than as set forth in the terms and conditions of purchase. To the maximum extent ...
sogang university sogang university. semiconductor device lab.
... such as bipolar power transistors and thyristors. 1970’s : The advent of MOS technology for digital electronics enabled the creation of a new class of devices in the 1970s for power switching applications. 1980’s : The merger of MOS and bipolar physics enabled creation of yet another class of device ...
... such as bipolar power transistors and thyristors. 1970’s : The advent of MOS technology for digital electronics enabled the creation of a new class of devices in the 1970s for power switching applications. 1980’s : The merger of MOS and bipolar physics enabled creation of yet another class of device ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.