Comparative Evaluation of Space Vector Based Pulse Width
... compared in terms of switching losses based on the switching energy lost in each sub-cycle. The normalized switching energy loss in a sub-cycle ESU B SEQ is a function of α and power factor angle φ. The normalized switching energy loss in a sub-cycle is plotted for sequences 0127, 0121 and 7212 over ...
... compared in terms of switching losses based on the switching energy lost in each sub-cycle. The normalized switching energy loss in a sub-cycle ESU B SEQ is a function of α and power factor angle φ. The normalized switching energy loss in a sub-cycle is plotted for sequences 0127, 0121 and 7212 over ...
Switched-mode and Resonant dc Power Supplies
... draw accurate waveforms for • the voltage across, and the current through L; vL and iL • the capacitor current, ic • the switch and diode voltage and current; vT, vD, iT, iD. Hence calculate the switch utilisation ratio as defined by equation (15.11). calculate the mean and rms current ratings of di ...
... draw accurate waveforms for • the voltage across, and the current through L; vL and iL • the capacitor current, ic • the switch and diode voltage and current; vT, vD, iT, iD. Hence calculate the switch utilisation ratio as defined by equation (15.11). calculate the mean and rms current ratings of di ...
Inductance in DC Circuits
... Consider instantaneous values Rate of change of current will be Δi/ Δ t So e.m.f =L Δ i/ Δ t ...
... Consider instantaneous values Rate of change of current will be Δi/ Δ t So e.m.f =L Δ i/ Δ t ...
TPS40400 3-V to 20-V PMBus Synchronous
... Common connection for the device. This pin should connect to the thermal pad under the device package and to the power stage ground, preferably close to the source of the low-side or rectifier MOSFET. Connections should be arranged so that no high-power level currents flow across the pad connected t ...
... Common connection for the device. This pin should connect to the thermal pad under the device package and to the power stage ground, preferably close to the source of the low-side or rectifier MOSFET. Connections should be arranged so that no high-power level currents flow across the pad connected t ...
low-voltage logic (lvc) designer`s guide
... of ground bounce and signal noise. An additional benefit of the reduced power consumption is the extended life of the battery when a system is not powered by a regulated power supply. Although a complete migration may not be feasible for a particular application, beginning to integrate 3.3-V compone ...
... of ground bounce and signal noise. An additional benefit of the reduced power consumption is the extended life of the battery when a system is not powered by a regulated power supply. Although a complete migration may not be feasible for a particular application, beginning to integrate 3.3-V compone ...
Viva-Voce – Current Electricity
... www.physicsbeckons.wordpress.com Q.15. How is the resistance of a conductor affected by rise in temperature ? Ans. The resistance increases. Q.16. Give example of a material whose resistance decreases with rise in temperature. Ans. Semiconductor. Q.17. How can you convert a galvanometer into an amm ...
... www.physicsbeckons.wordpress.com Q.15. How is the resistance of a conductor affected by rise in temperature ? Ans. The resistance increases. Q.16. Give example of a material whose resistance decreases with rise in temperature. Ans. Semiconductor. Q.17. How can you convert a galvanometer into an amm ...
Memristor
The memristor (/ˈmɛmrɨstər/; a portmanteau of memory resistor) was a term coined in 1971 by circuit theorist Leon Chua as a missing non-linear passive two-terminal electrical component relating electric charge and magnetic flux linkage. The operation of RRAM devices was recently connected to the memristor concept According to the characterizing mathematical relations, the memristor would hypothetically operate in the following way: The memristor's electrical resistance is not constant but depends on the history of current that had previously flowed through the device, i.e., its present resistance depends on how much electric charge has flowed in what direction through it in the past. The device remembers its history - the so-called non-volatility property: When the electric power supply is turned off, the memristor remembers its most recent resistance until it is turned on again.Leon Chua has more recently argued that the definition could be generalized to cover all forms of two-terminal non-volatile memory devices based on resistance switching effects although some experimental evidence contradicts this claim, since a non-passive nanobattery effect is observable in resistance switching memory. Chua also argued that the memristor is the oldest known circuit element, with its effects predating the resistor, capacitor and inductor.In 2008, a team at HP Labs claimed to have found Chua's missing memristor based on an analysis of a thin film of titanium dioxide; the HP result was published in Nature. The memristor is currently under development by various teams including Hewlett-Packard, SK Hynix and HRL Laboratories.These devices are intended for applications in nanoelectronic memories, computer logic and neuromorphic/neuromemristive computer architectures. In October 2011, the HP team announced the commercial availability of memristor technology within 18 months, as a replacement for Flash, SSD, DRAM and SRAM. Commercial availability of new memory was more recently estimated as 2018. In March 2012, a team of researchers from HRL Laboratories and the University of Michigan announced the first functioning memristor array built on a CMOS chip.