Download Product Summary Features and Benefits COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET

COMPLEMENTARY PAIR ENHANCEMENT MODE MOSFET
Product Summary
Device
V(BR)DSS
Q1
30V
Q2
-30V
Features and Benefits
RDS(ON) max
ID max
TA = +25°C
27mΩ @ VGS = 10V
7.2A
35mΩ @ VGS = 4.5V
6.0A
25mΩ @ VGS = -10V
-7.6A
41mΩ @ VGS = -4.5V
-6.2A
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Low Input Capacitance
Low On-Resistance
Fast Switching Speed
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
Mechanical Data
This new generation MOSFET has been designed to minimize the onstate resistance (RDS(ON)) and yet maintain superior switching
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performance, making it ideal for high efficiency power management
applications.
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Applications
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DC-DC Converters
Power Management Functions
Backlighting
S1
D1
G1
D1
S2
D2
G2
D2
Case: SO-8
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Tin Finish annealed over Copper leadframe.
Solderable per MIL-STD-202, Method 208 e3
Weight: 0.074 grams (approximate)
Top View
Pin Configuration
Top View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
DMC3028LSDX-13
Notes:
Case
SO-8
Packaging
2,500/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
Top View
8
5
Logo
3028SDX
Part no .
YY WW
Xth week: 01 ~ 53
Year: “11” = 2011
1
4
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Maximum Ratings – Q1 and Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Gate-Source Voltage
Symbol
VDSS
VGSS
Q1
30
±20
Q2
-30
±20
Units
V
V
Steady
State
TA = +25°C
TA = +70°C
ID
5.5
4.1
-5.8
-4.3
A
t<10s
TA = +25°C
TA = +70°C
ID
7.2
5.7
-7.6
-6.1
A
IS
IDM
2.2
40
-2.2
-30
A
A
Continuous Drain Current (Note 5) VGS =10V
Maximum Body Diode Forward Current (Note 5)
Pulsed Drain Current (10µs pulse, duty cycle = 1%)
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
TA = +25°C
Total Power Dissipation (Note 5)
PD
TA = +70°C
Steady state
t<10s
TA = +25°C
Thermal Resistance, Junction to Ambient (Note 5)
Total Power Dissipation (Note 6)
R• JA
PD
TA = +70°C
Steady state
t<10s
Thermal Resistance, Junction to Ambient (Note 6)
RΘJA
Thermal Resistance, Junction to Case (Note 6)
Operating and Storage Temperature Range
RΘJC
TJ, TSTG
Value
1.2
Units
W
0.75
108
65
1.5
°C/W
0.95
85
50
14.5
-55 to +150
°C/W
W
°C
Electrical Characteristics – Q1 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
30






1
±100
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
VSD
1




19
22
0.7
3
27
35
1.2
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf












641
66
51
2.2
6
13.2
1.7
2.2
3.3
4.4
22.3
5.3












Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = 4.5V)
Total Gate Charge (VGS = 10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
nA
V
mΩ
V
Test Condition
VGS = 0V, ID = 250µA
VDS = 24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = 250µA
VGS = 10V, ID = 6A
VGS = 4.5V, ID = 5A
VGS = 0V, IS = 1.3A
pF
VDS = 15V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = 15V, ID = 10A
nS
VGS = 10V, VDD = 15V, RG = 6Ω,
ID = 1A
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.
6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
7. IAR and EAR rating are based on low frequency and duty cycles to keep TJ = +25°C
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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Electrical Characteristics – Q2 (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
Symbol
Min
Typ
Max
Unit
BVDSS
IDSS
IGSS
-30






-1
±100
µA
VGS(th)
Static Drain-Source On-Resistance
RDS (ON)
VSD
-1




21
29
-0.7
-3
25
41
-1.2
Ciss
Coss
Crss
RG
Qg
Qg
Qgs
Qgd
tD(on)
tr
tD(off)
tf












1241
146
110
14.8
10.9
22
3.5
4.7
9.7
17.1
60.5
40.4












Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Total Gate Charge (VGS = -4.5V)
Total Gate Charge (VGS = -10V)
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Notes:
V
nA
V
mΩ
V
Test Condition
VGS = 0V, ID = -250µA
VDS = -24V, VGS = 0V
VGS = ±20V, VDS = 0V
VDS = VGS, ID = -250µA
VGS = -10V, ID = -6A
VGS = -4.5V, ID = -5A
VGS = 0V, IS = -1.3A
pF
VDS = -15V, VGS = 0V
f = 1.0MHz
Ω
VDS = 0V, VGS = 0V, f = 1.0MHz
nC
VDS = -15V, ID = -7A
nS
VGS = -10V, VDD = -15V, RGEN = 6Ω,
ID = -7A
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to product testing.
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N-Channel – Q1
30.0
30
VGS = 10V
VDS = 5V
VGS = 3.5V
25
VGS = 5.0V
VGS = 4.0V
20.0
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
25.0
VGS = 3.0V
VGS = 4.5V
15.0
10.0
5.0
20
VGS = 150°C
15
VGS = 125°C
10
VGS = 85°C
5
VGS = 2.5V
0
0.5
1
1.5
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristic
VGS = -55°C
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0.045
0.04
0.035
0.03
0.025
VGS = 4.5V
0.02
0.015
VGS = 10V
0.01
0.005
0.00
0
5
10
15
20
25
ID, DRAIN-SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
30
RDS(ON), DRAIN-SOURCE ON-RESISTANCE
(NORMALIZED)
1.8
1.6
VGS = 4.5V
ID = 5A
1.4
VGS = 10V
ID = 10A
1.2
1
0.8
0.6
-50
0
0
2
-25
0
25
50
75
100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 5 On-Resistance Variation with Temperature
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.0
VGS = 25°C
0.5
1
1.5
2
2.5
3
3.5
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristic
4
0.05
VGS = 4.5V
0.045
0.04
TA = 150°C
TA = 125°C
0.035
0.03
TA = 85°C
0.025
TA = 25°C
0.02
TA = -55°C
0.015
0.01
0.005
0
0
5
10
15
20
25
ID, DRAIN CURRENT(A)
Figure 4 Typical On-Resistance vs.
Drain Current and Temperature
30
0.04
0.035
VGS = 4.5V
ID = 5A
0.03
0.025
VGS = 10V
ID = 10A
0.02
0.015
0.01
0.005
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 6 On-Resistance Variation with Temperature
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30
2.5
25
2
ID = 1mA
1.5
ID = 250µA
1
IS, SOURCE CURRENT (A)
VGS(TH), GATE THRESHOLD VOLTAGE
3
0.5
20
TA = 25°C
15
10
5
0
-50
0
75 100 125 150
0
25
50
TA, AMBIENT TEMPERATURE (°C)
Figure 7 Gate Threshold Variation vs. Ambient Temperature
-25
10000
0
0.2
0.4
0.6
0.8
1
1.2
V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 8 Diode Forward Voltage vs. Current
10000
CT, JUNCTION CAPACITANCE (pF)
1000
TA = 125°C
100
TA = 85°C
10
TA = 25°C
1
0.1
10
20
30
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9 Typical Drain-Source Leakage Current vs. Voltage
0
1000
Ciss
100
Coss
Crss
10
0
2
4
6
8 10 12 14 16 18
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
10
VGS, GATE-SOURCE VOLTAGE (V)
IDSS, DRAIN LEAKAGE CURRENT (nA)
f = 1MHz
TA = 150°C
8
VDS =15
ID = 10A
6
4
2
0
0
2
4
6
8
10
12
14
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate-Source Voltage vs. Total Gate Charge
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20
P-Channel – Q2
20
20
VGS = -10V
15
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)
VDS = -5.0V
VGS = -5.0V
VGS = -4.5V
VGS = -4.0V
10
VGS = -3.5V
VGS = -3.0V
5
15
10
5
TA = 150°C
TA = 125°C
VGS = -2.5V
0
1
2
3
4
-V DS, DRAIN -SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
R DS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
5
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0.05
0.04
0.03
VGS = -4.5V
0.02
VGS = -10V
0.01
0
0
5
10
15
20
25
-ID, DRAIN SOURCE CURRENT (A)
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
0
TA = -55° C
0
1
2
3
4
-VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
5
0.30
ID = -7.0A
0.25
ID = -6.2A
0.20
0.15
0.10
0.05
0
0
30
5
10
15
20
-V GS, GATE-SOURCE VOLTAGE (V)
Figure 4 Typical Drain-Source On-Resistance
vs. Gate-Source Voltage
1.8
0.05
VGS = -4.5V
0.04
TA = 150°C
RDS(ON), DRAIN-SOURCE
ON-RESISTANCE (NORMALIZED)
RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω)
0
TA = 85°C
TA = 25° C
TA = 125°C
TA = 85°C
0.03
TA = 25°C
0.02
TA = -55°C
0.01
0
0
2
4
6
8 10 12 14 16 18
-ID, DRAIN SOURCE CURRENT (A)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
20
1.6
VGS = -10V
ID = -10A
1.4
VGS = -5.0V
ID = -5.0A
1.2
1.0
0.8
0.6
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE ( °C)
Figure 6 On-Resistance Variation with Temperature
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VGS(TH), GATE THRESHOLD VOLTAGE (V)
RDS(on), DRAIN-SOURCE ON-RESISTANCE (Ω)
3.0
0.05
0.04
VGS = -5.0V
ID = -5.0A
0.03
VGS = -10V
ID = -10A
0.02
0.01
0
-50
-25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
Figure 7 On-Resistance Variation with Temperature
2.5
2.0
-ID = 1mA
1.5
-ID = 250µA
1.0
0.5
0
-50
-25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
-IS, SOURCE CURRENT (A)
20
15
10
TA= 150°C
TA= 125°C
TA= 85°C
5
TA= 25°C
TA= -55°C
0
0
0.2
0.4
0.6
0.8
1.0
1.2
-V SD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
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Package Outline Dimensions
0.254
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
E1 E
A1
L
Gauge Plane
Seating Plane
Detail ‘A’
7°~9°
h
45°
Detail ‘A’
A2 A A3
b
e
SO-8
Dim
Min
Max
A
1.75
A1
0.10
0.20
A2
1.30
1.50
A3
0.15
0.25
b
0.3
0.5
D
4.85
4.95
E
5.90
6.10
E1
3.85
3.95
e
1.27 Typ
h
0.35
L
0.62
0.82
Θ
0°
8°
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X
C1
C2
Dimensions
X
Y
C1
C2
Value (in mm)
0.60
1.55
5.4
1.27
Y
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