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Field Effect Transistors
Introduction
• Two main types of FET:
- JFET –Junction field effects transistor
- MOSFET – Metal oxide semiconductor field effect transistor
- D-MOSFET ~ Depletion MOSFET
- E-MOSFET ~ Enhancement MOSFET
• Similarities:
-Amplifiers
-Switching devices
-Impedance matching circuits
• Differences:
-FET’s are voltage controlled devices whereas BJT’s are current
controlled devices.
-FET’s also have a higher input impedance, but BJT’s have higher
gains.
-FET’s are less sensitive to temperature variations and more easily
integrated on IC’s.
- FET’s are also generally more static sensitive than BJT’s.
Construction and characteristics of
JFET
• N-channel device will appear as the
prominent device with paragraph
and section devoted to the impact of
using a p-channel.
• Major part of structure is n-type
material.
• Top of the n-type channel is
connected through an ohmic contact
to a terminal referred to as the drain
(D)
• The lower end-connected through an
ohmic contact to a terminal referred
as source (S)
• P-type materials are connected
together and to the gate (G)
terminal.
• JFET has two p-n junctions under nobias conditions.
Construction and characteristics of
JFET
• JFET operation can be compared to a water faucet:
• The source of water pressure – accumulated electrons at the
negative pole of the applied voltage from Drain to Source
• The drain of water – electron deficiency (or holes) at the
positive pole of the applied voltage from Drain to Source.
• The control of flow of water – Gate voltage that controls the
width of the n-channel, which in turn controls the flow of
electrons in the n-channel from source to drain.
Construction and characteristics of
JFET
N-Channel JFET Circuit Layout
JFET Operating Characteristics
There are three basic operating conditions for a JFET:
A. VGS = 0, VDS increasing to some positive
value
B. VGS < 0, VDS at some positive value
C. Voltage-Controlled Resistor
VGS = 0, VDS increasing to some
positive value
Three things happen when VGS = 0
and VDS is increased from 0 to a
more positive voltage:
• the depletion region between p-gate
and
n-channel
increases
as
electrons from n-channel combine
with holes from p-gate.
• increasing the depletion region,
decreases the size of the n-channel
which increases the resistance of
the n-channel.
• But even though the n-channel
resistance is increasing, the current
(ID) from Source to Drain through
the n-channel is increasing. This is
because VDS is increasing.
VGS = 0, VDS increasing to some
positive value
• The flow of charge is relatively uninhibited and limited solely by
the resistance of the n-channel between drain and source.
• The depletion region is wider near the top of both p-type
materials.
• ID will establish the voltage level through the channel.
• The result: upper region of the p-type
material will be reversed biased by
about 1.5V with the lower region only
reversed biased by 0.5V (greater
applied reverse bias, the wider
depletion region).
VGS = 0, VDS increasing to some
positive value
• IG=0A  p-n junction is reverse-biased for the length of the
channel results in a gate current of zero amperes.
• As the VDS is increased from 0 to a few volts, the current will
increase as determined by Ohm’s Law.
• VDS increase and approaches a level referred to as Vp, the
depletion region will widen, causing reduction in the channel
width. (p large, n small).
• Reduced part of conduction causes the resistance to increase.
• If VDS is increased to a level where it appears that the 2
depletion regions would touch (pinch-off)
VGS = 0, VDS increasing to some
positive value
• Vp = pinch off voltage.
• ID maintain the saturation level
defined as IDSS
• Once the VDS > VP, the JFET has the
characteristics of a current source.
• As shown in figure, the current is
fixed at ID = IDSS, the voltage VDS (for
level >Vp) is determined by the
applied load.
• IDSS is derived from the fact that it is
the drain-to-source current with short
circuit connection from gate to source.
• IDSS is the max drain current for a
JFET and is defined by the conditions
VGS=0V and VDS > | Vp|.
VGS = 0, VDS increasing to some
positive value
At the pinch-off point:
•any further increase in VGS
does not produce any increase
in ID. VGS at pinch-off is
denoted as Vp.
• ID is at saturation or
maximum. It is referred to as
IDSS.
• The ohmic value of the
channel is at maximum.
Typical JFET operation
JFET modeling when ID=IDSS, VGS=0, VDS>VP
VGS < 0, VDS at some positive value
• VGS is the controlling voltage of
the JFET.
• For n-channel devices, the
controlling voltage VGS is made
more and more negative from
its VGS = 0V level.
• The effect of the applied
negative VGS is to establish
depletion regions similar to
those obtained with VGS=0V
but a lower level of VDS  to
reach the saturation level at a
lower level of VDS.
VGS < 0, VDS at some positive value
• When VGS = -Vp will be sufficiently negative to establish
saturation level that is essentially 0mA, the device has been
‘turn off’.
• The level of the VGS that results in ID = 0 mA is defined by
VGS = Vp, with Vp being a negative voltage for n-channel
devices and a positive voltage or p-channel JFETs.
• In this region, JFET can actually be employed as a variable
resistor whose resistance is controlled by the applied gate
to source voltage.
• A VGS becomes more and more negative; the slope of each
curve becomes more and more horizontal.
VGS < 0, VDS at some positive value
• The region to the right
of the pinch-off locus of
the figure is the region
typically employed in
linear amplifiers
(amplifiers with min
distortion of the applied
signal) and is commonly
referred to as the
constant-current,
saturation, or linear
amplification region.
Characteristic curves for Nchannel JFET
Voltage-Controlled Resistor
• The region to the left of the
pinch-off point is called the
ohmic region.
• The JFET can be used as a
variable resistor, where VGS
controls the drain-source
resistance (rd). As VGS
becomes more negative, the
resistance (rd) increases.
ro
rd 
(1 VGS
VP
)2
And as summary in practical…
p-Channel JFETS
p-Channel JFET acts the same as the n-channel JFET,
except the polarities and currents are reversed.
P-Channel JFET Characteristics
As VGS increases more positively:
• the depletion zone increases
• ID decreases (ID < IDSS)
• eventually ID = 0A
Also note that at high levels of
VDS the JFET reaches a
breakdown situation. ID
increases uncontrollably if
VDS> VDSmax.
JFET Symbols
Transfer Characteristics
• The transfer characteristic of input-to-output is not
as straight forward in a JFET as it was in a BJT.
• In a BJT,  indicated the relationship between IB
(input) and IC (output).
• In a JFET, the relationship of VGS (input) and ID
(output) is a little more complicated:
VGS 2
ID  IDSS(1
)
VP
Transfer Characteristics
Transfer Curve
From this graph it is easy to determine the value of ID for a given value of VGS.
Plotting the Transfer Curve
Shockley’s Equation Methods.
• Using IDSS and Vp (VGS(off)) values found in a specification sheet,
the Transfer Curve can be plotted using these 3 steps:
• Step 1:
ID  IDSS(1
• Solving for VGS = 0V:
ID  IDSS
• Step 2:
ID  IDSS(1
• Solving for VGS = Vp (VGS(off)): ID  0 A
VGS 2
)
VP
VGS  0V
VGS 2
)
VP
VGS  VP
• Step 3:
• Solving for VGS = 0V to Vp:
ID  IDSS(1
VGS 2
)
VP
Plotting the Transfer Curve
Shorthand method
VGS
ID
0
IDSS
0.3VP
IDSS/2
0.5
IDSS/4
VP
0mA
Specification Sheet (JFETs)
Case Construction and Terminal Identification
This information is also available on the specification sheet.
MOSFETs
MOSFETs have characteristics
similar to JFETs and additional
characteristics that make then
very useful.
There are 2 types:
1.
2.
Depletion-Type MOSFET
Enhancement-Type
MOSFET
Depletion-Type MOSFET
Construction
The Drain (D) and Source (S) connect to the to n-doped regions. These Ndoped regions are connected via an n-channel. This n-channel is connected
to the Gate (G) via a thin insulating layer of SiO2. The n-doped material lies
on a p-doped substrate that may have an additional terminal connection
called SS.
Depletion-Type MOSFET
Construction
• VGS is set to 0V by the direct
connection from one terminal
to the other.
• VDS is applied across the
drain-to-source terminals.
• The result is an attraction for
the positive potential at the
drain by the free electron of
the n-channel and a current
similar to that established
through the channel of the
JFET.
• In the figure, VGS has been
set at a negative voltage
(-1V)
Depletion-Type MOSFET
Construction
• Negative potential at gate will tend to
pressure electron towards the ptype substrate and attract holes
from the p-type substrate.
• Depending on negative bias
established by VGS, a level
recombination between electron
and hoes will occur.--- it will
reduce the number of free electron
in the n-channel available for
conduction.
• The more negative bias, the
higher the rate of recombination
• ID decrease, negative bias for VGS
increase
Basic Operation
A Depletion MOSFET can operate in two modes: Depletion or Enhancement mode.
Depletion-type MOSFET in
Depletion Mode
Depletion mode
The characteristics are similar to the
JFET.
When VGS = 0V, ID = IDSS
When VGS < 0V, ID < IDSS
The formula used to plot the Transfer
Curve still applies:
ID  IDSS(1
VGS 2
)
VP
Depletion-type MOSFET in
Enhancement Mode
Enhancement mode
VGS > 0V, ID increases above IDSS
The formula used to plot the
Transfer Curve still applies:
(note that VGS is now a positive
polarity)
ID  IDSS(1
VGS 2
)
VP
p-Channel Depletion-Type
MOSFET
The p-channel Depletion-type MOSFET is similar to the n-channel except
that the voltage polarities and current directions are reversed.
Symbols
Enhancement-Type MOSFET
Construction
The Drain (D) and Source (S) connect to the to n-doped regions.
These n-doped regions are connected via an n-channel. The
Gate (G) connects to the p-doped substrate via a thin insulating
layer of SiO2. There is no channel. The n-doped material lies
on a p-doped substrate that may have an additional terminal
connection called SS.
Enhancement-Type MOSFET
Construction
• VGS=0, VDS some value, the absence of an n-channel will result
in a current of effectively 0A
• VDS some positive voltage, VGS=0V, and terminal SS is directly
connected to the source, there are in fact 2 reversed-biased p-n
junction between the n-doped regions and p substrate to
oppose any significant flow between drain and source.
• VDS and VGS have been set at some positive voltage greater
than 0V, establishing the D and G at a positive potential with
respect to the source
• The positive potential at the gate will pressure the holes in the p
substrate along the edge of the SiO2 layer to leave the area and
enter deeper regions of the p-substrate
• The result is a depletion region near the SiO2 insulating layer
void of holes
Enhancement-Type MOSFET
Construction
• The electrons will in the p substrate will be
attracted to the +G and accumulate in the
region near the surface of the SiO2 layer
• The SiO2 layer and its insulating qualities
will prevent the negative carriers from being
absorbed at the gate terminal
• VGS increase, the concentration of electrons
near the SiO2 surface increase until
eventually the induced n-type region can
support a measurable flow between D and S
• The level of VGS that results in the
significant increase in drain current is called
the threshold voltage, VT.
• VGS increase beyond the VT level the density
of the carriers in the induced channel will
increase and ID also increase
Enhancement-Type MOSFET
Construction
• If VGS constant and increase
the level of VDS, ID will
eventually reach a saturation
level as occurred for the JFET
• Applying Kirchoff’s voltage
law to the terminal voltage of
the MOSFET
VDG = VDS- VGS
• If VGS fixed at some value,
8V, VDS increased from 2 –
5V, the VDG will drop from 6V to -3V and the gate will
become less and less positive
with respect to the drain
Enhancement-Type MOSFET
Construction
The Enhancement-type MOSFET only operates in the enhancement mode.
VGS is always positive
As VGS increases, ID increases
But if VGS is kept constant and VDS is
increased, then ID saturates (IDSS)
The saturation level, VDSsat is
reached.
VDsat VGS VT
Enhancement-Type MOSFET
Construction
To determine ID given VGS:
I D  k (VGS VT ) 2
where VT = threshold voltage or voltage at which the MOSFET turns on.
k = constant found in the specification sheet. k can also be determined by
ID(on)
using values at a specific point and the formula: k 
(VGS(ON)  VT) 2
VDsat VGS VT
VDSsat can also be calculated:
p-Channel Enhancement-Type
MOSFETs
The p-channel Enhancement-type MOSFET is similar to the nchannel except that the voltage polarities and current directions
are reversed.
Symbols
Specification Sheet
MOSFET Handling
• MOSFETs are very static sensitive. Because of the
very thin SiO2 layer between the external terminals
and the layers of the device, any small electrical
discharge can stablish an unwanted conduction.
Protection:
• Always transport in a static sensitive bag
• Always wear a static strap when handling MOSFETS
• Apply voltage limiting devices between the Gate and
Source, such as back-to-back Zeners to limit any
transient voltage.
VMOS
VMOS – Vertical MOSFET increases the surface area of the
device.
Advantage:
•This allows the device to handle higher currents by
providing it more surface area to dissipate the heat.
•VMOSs also have faster switching times.
CMOS
CMOS – Complementary MOSFET p-channel and n-channel MOSFET on
the same substrate.
Advantage:
Useful in logic circuit designs
Higher input impedance
Faster switching speeds
Lower operating power levels
Summary Table