Download MDO600-16N1 Datasheet

MDO600-16N1
Standard Rectifier Module
VRRM
=
1600 V
I FAV
=
608 A
VF
=
1.01 V
Single Diode
Part number
MDO600-16N1
Backside: isolated
2
3
Features / Advantages:
Applications:
Package: Y1
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140204a
MDO600-16N1
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
max.
1700
Unit
V
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
1600
V
IR
reverse current
VF
forward voltage drop
min.
typ.
VR = 1600 V
TVJ = 25°C
1
mA
VR = 1600 V
TVJ = 140°C
30
mA
I F = 600 A
TVJ = 25°C
1.12
V
1.30
V
1.01
V
I F = 1200 A
TVJ = 125 °C
I F = 600 A
I F = 1200 A
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
TC = 85°C
180° sine
R thCH
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
V
608
A
TVJ = 140 °C
0.76
V
d = 0.5
for power loss calculation only
Ptot
1.23
T VJ = 140 °C
0.32
mΩ
0.072
K/W
0.024
K/W
TC = 25°C
1600
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
15.0
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
16.2
kA
t = 10 ms; (50 Hz), sine
TVJ = 140 °C
12.8
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
13.8
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
1.13 MA²s
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
VR = 0 V
1.09 MA²s
812.8 kA²s
TVJ = 140 °C
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 400 V; f = 1 MHz
TVJ = 25°C
788.8 kA²s
762
Data according to IEC 60747and per semiconductor unless otherwise specified
pF
20140204a
MDO600-16N1
Package
Ratings
Y1
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
max.
600
Unit
A
-40
140
°C
-40
125
°C
Tstg
storage temperature
-40
125
°C
Weight
typ.
650
g
MD
mounting torque
4.5
7
Nm
MT
terminal torque
11
13
Nm
d Spp/App
d Spb/Apb
VISOL
terminal to terminal
creepage distance on surface | striking distance through air
terminal to backside
t = 1 second
isolation voltage
Circuit Diagram
PART NUMBER
mm
25.0
mm
3600
V
3000
V
Made in Germany
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
16.0
ywwH
Date Code Prod. Index
Ordering
Standard
Part Number
MDO600-16N1
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
MDO600-16N1
* on die level
Delivery Mode
Box
Code No.
509707
T VJ = 140 °C
Rectifier
V 0 max
threshold voltage
0.76
V
R 0 max
slope resistance *
0.13
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Quantity
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20140204a
MDO600-16N1
Outlines Y1
43
49
35
28.5
4567
50
22.5
1
2
38
52
+0
-1,4
M8 x20
3
6.2
80
92
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20140204a
MDO600-16N1
Rectifier
107
14000
1000
VR = 0V
900
12000
ITSM
800
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 140°C
10000
DC
180° sin
120°
60°
30°
700
I2 t
8000
IFAVM
106
2
6000
TVJ = 45°C
[A s]
[A]
500
[A] 400
300
TVJ = 140°C
4000
600
200
2000
100
105
0
0.001
0.01
0.1
0
1
1
10
0
2
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
50
75
100 125 150
TC [A]
t [ms]
t [s]
25
Fig. 3 Max. forward current
at case temperature
Fig. 2 I t versus time (1-10 ms)
1600
1200
R thKA K/W
800
Ptot
600
[W]
400
1400
0.03
0.07
0.12
0.2
0.3
0.4
0.6
1000
1200
IF 1000
[A] 800
DC
180° sin
120°
60°
30°
600
400
TVJ = 125°C
200
TVJ = 25°C
200
0
0
200
400
600
800
0
25
50
IFAVM [A]
75
100
125
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
VF [V]
TA [°C]
Fig. 4 Power dissipation vs. forward current and ambient temperature
Fig. 5 Forward current IF vs. VF
3200
R
2800
R thKA K/W
L
0.015
0.03
0.04
0.05
0.07
0.01
0.14
2400
Ptot
[W]
2000
1600
1200
Circuit
B2
4xMDO600
800
400
0
0
300
600
900
1200
0
IFAVM [A]
25
50
75
100
125
150
TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140204a
MDO600-16N1
Rectifier
5000
R thKA K/W
4500
0.01
0.02
0.03
0.045
0.06
0.08
0.12
4000
3500
Ptot
[W]
3000
2500
2000
Circuit
B6
6xMDO600
1500
1000
500
0
0
300 600 900 1200 1500
0
25
50
75
100
125
150
TA [°C]
IdAVM [A]
Fig. 7 Three phase rectifier bridge: Power dissipation
versus direct output current and ambient temperature
0.12
RthJC for various conduction angles d:
0.10
d
RthJC (K/W)
DC
0.072
180° 0.0768
120° 0.081
60° 0.092
30° 0.111
0.08
ZthJC
0.06
30°
60°
120°
180°
DC
[K/W]
0.04
Constants for ZthJC calculation:
i Rthi (K/W)
0.02
0.00
10-3
10-2
10-1
100
101
102
t [s]
1
2
3
4
0.0035
0.0186
0.0432
0.0067
ti (s)
0.0054
0.098
0.54
12
Fig. 8 Transient thermal impedance junction to case
0.14
RthJK for various conduction angles d:
0.12
d
RthJK (K/W)
DC
0.096
180°C
0.1
120°C
0.105
60°C
0.116
30°C
0.135
0.10
ZthJK
[K/W]
0.08
0.06
30°
60°
120°
180°
DC
0.04
0.02
0.00
10-3
10-2
10-1
100
Constants for ZthJK calculation:
101
t [s]
102
i
1
2
3
4
5
Rthi (K/W) ti (s)
0.0035 0.0054
0.0186 0.098
0.0432 0.54
0.067
12
0.024
12
Fig. 9 Transient thermal impedance junction to heatsink
IXYS reserves the right to change limits, conditions and dimensions.
© 2014 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20140204a