Download Sonic Fast Recovery Diode

DHG 40 C 600 HB
advanced
V RRM =
600 V
I FAV = 2x 20 A
t rr =
35 ns
Sonic Fast Recovery Diode
High Performance Fast Recove
Low Loss and Soft Recovery
Common Cathode
Part number
1
2
3
DHG 40 C 600 HB
Backside: cathode
Features / Advantages:
Applications:
Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
● Housing: TO-247
Symbol
Definition
Conditions
VRRM
max. repetitive reverse voltage
IR
reverse current
●rIndustry standard outline
●rEpoxy meets UL 94V-0
●rRoHS compliant
Ratings
VF
forward voltage
I FAV
average forward current
VF0
threshold voltage
rF
slope resistance
thermal resistance junction to case
T VJ
virtual junction temperature
Ptot
total power dissipation
I FSM
max. forward surge current
I RM
max. reverse recovery current
t rr
CJ
reverse recovery time
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
typ.
max.
Unit
600
V
VR = 600 V
30
µA
VR = 600 V
TVJ = 125 °C
3
mA
TVJ = 25 °C
2.31
V
3.80
V
IF =
20 A
IF =
40 A
IF =
20 A
IF =
40 A
rectangular, d = 0.5
for power loss calculation only
R thJC
min.
TVJ = 25 °C
TVJ = 25 °C
TVJ = 150 °C
2.15
V
3.00
V
TC = 85°C
20
A
TVJ = 150°C
1.31
V
-55
36.9
mΩ
0.90
K/W
150
°C
TC = 25 °C
140
W
t = 10 ms (50 Hz), sine
TVJ = 45°C
150
A
IF =
TVJ =
8
A
°C
tbd
A
TVJ = 25 °C
35
ns
TVJ =
°C
tbd
ns
TVJ = 25 °C
tbd
pF
TVJ = 25 °C
20 A; VR = 400 V
-di F /dt = 400 A/µs
VR = 300 V; f = 1 MHz
Data according to IEC 60747and per diode unless otherwise specified
20070507
DHG 40 C 600 HB
advanced
Ratings
Symbol
Definition
min.
Conditions
I RMS
RMS current
RthCH
thermal resistance case to heatsink
Tstg
storage temperature
per pin
max.
Unit
70
0.25
-55
Weight
A
K/W
150
°C
6
MD
mounting torque
FC
mounting force with clip
1)
typ.
1)
0.8
20
g
1.2
120
Nm
N
IRMS is typically limited by: 1. pin-to-chip resistance; or by 2. current capability of the chip.
In case of 1, a common cathode/anode configuration and a non-isolated backside, the whole current capability can be used by connecting
the backside.
Product Marking
Part number
Logo
Marking on product
DateCode
Assembly Code
Ordering
Standard
D
H
G
40
C
600
HB
abcdef
YYWW
XXXXXX
Part Name
DHG 40 C 600 HB
Similar Part
DHG40C1200HB
DHG40C1200PB
DHG40C600PB
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
Marking on Product
DHG40C600HB
Package
TO-247
TO-220
TO-220
Delivering Mode
Tube
=
=
=
=
=
=
=
Diode
Sonic Fast Recovery Diode
extreme fast
Current Rating [A]
Common Cathode
Reverse Voltage [V]
TO-247AD (3)
Base Qty Code Key
30
505145
Voltage class
1200
1200
600
Data according to IEC 60747and per diode unless otherwise specified
20070507
DHG 40 C 600 HB
advanced
Outlines TO-247
Symbol
A
A1
A2
D
E
E2
e
L
L1
ØP
Q
S
b
b2
b4
c
D1
D2
E1
ØP1
Inches
min
max
0.185
0.209
0.087
0.102
0.059
0.098
0.819
0.845
0.610
0.640
0.170
0.216
0.215 BSC
0.780
0.800
0.177
0.140
0.144
0.212
0.244
0.242 BSC
0.039
0.055
0.065
0.094
0.102
0.135
0.015
0.035
0.515
0.020
0.053
0.530
0.291
IXYS reserves the right to change limits, conditions and dimensions.
© 2007 IXYS all rights reserved
Millimeters
min
max
4.70
5.30
2.21
2.59
1.50
2.49
20.79
21.45
15.48
16.24
4.31
5.48
5.46 BSC
19.80
20.30
4.49
3.55
3.65
5.38
6.19
6.14 BSC
0.99
1.40
1.65
2.39
2.59
3.43
0.38
0.89
13.07
0.51
1.35
13.45
7.39
Data according to IEC 60747and per diode unless otherwise specified
20070507