Download MDD312-20N1

MDD312-20N1
High Voltage Standard Rectifier Module
VRRM
= 2x 2000 V
I FAV
=
310 A
VF
=
1.03 V
Phase leg
Part number
MDD312-20N1
Backside: isolated
2
1
3
Features / Advantages:
Applications:
Package: Y1
● Package with DCB ceramic
● Improved temperature and power cycling
● Planar passivated chips
● Very low forward voltage drop
● Very low leakage current
● Diode for main rectification
● For single and three phase
bridge configurations
● Supplies for DC power equipment
● Input rectifiers for PWM inverter
● Battery DC power supplies
● Field supply for DC motors
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Base plate: Copper
internally DCB isolated
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160426h
MDD312-20N1
Ratings
Rectifier
Conditions
Symbol
VRSM
Definition
max. non-repetitive reverse blocking voltage
TVJ = 25°C
VRRM
max. repetitive reverse blocking voltage
TVJ = 25°C
2000
IR
reverse current
VF
forward voltage drop
min.
typ.
VR = 2000 V
TVJ = 25°C
500
µA
TVJ = 150°C
30
mA
I F = 300 A
TVJ = 25°C
1.13
V
1.33
V
1.03
V
TVJ = 125 °C
I F = 300 A
I F = 600 A
I FAV
average forward current
TC = 100 °C
I F(RMS)
RMS forward current
180° sine
VF0
threshold voltage
rF
slope resistance
R thJC
thermal resistance junction to case
thermal resistance case to heatsink
total power dissipation
I FSM
max. forward surge current
I²t
CJ
value for fusing
junction capacitance
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
1.29
V
T VJ = 150 °C
310
A
520
A
TVJ = 150 °C
0.80
V
0.6
mΩ
d = 0.5
for power loss calculation only
R thCH
V
VR = 2000 V
I F = 600 A
Ptot
max. Unit
2100
V
0.12 K/W
K/W
0.04
TC = 25°C
1040
W
t = 10 ms; (50 Hz), sine
TVJ = 45°C
10.8
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
11.7
kA
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
9.18
kA
t = 8,3 ms; (60 Hz), sine
VR = 0 V
9.92
kA
t = 10 ms; (50 Hz), sine
TVJ = 45°C
583.2 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
566.1 kA²s
t = 10 ms; (50 Hz), sine
TVJ = 150 °C
421.4 kA²s
t = 8,3 ms; (60 Hz), sine
VR = 0 V
VR = 700 V; f = 1 MHz
TVJ = 25°C
409.0 kA²s
288
Data according to IEC 60747and per semiconductor unless otherwise specified
pF
20160426h
MDD312-20N1
Package
Ratings
Y1
Symbol
I RMS
Definition
Conditions
RMS current
per terminal
min.
TVJ
virtual junction temperature
T op
operation temperature
Tstg
storage temperature
-40
typ.
max.
600
Unit
A
-40
150
°C
-40
125
°C
125
°C
680
Weight
g
MD
mounting torque
4.5
7
Nm
MT
terminal torque
11
13
Nm
d Spp/App
terminal to terminal
creepage distance on surface | striking distance through air
terminal to backside
d Spb/Apb
VISOL
t = 1 second
isolation voltage
t = 1 minute
50/60 Hz, RMS; IISOL ≤ 1 mA
16.0
mm
16.0
mm
3600
V
3000
V
Prod. Index
Date Code
Circuit
yywwAA
Part Number
Lot.No: xxxxxx
Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31)
leer (33), lfd.# (33-36)
Ordering
Standard
Ordering Number
MDD312-20N1
Similar Part
MDD312-12N1
MDD312-14N1
MDD312-16N1
MDD312-18N1
MDD312-22N1
Equivalent Circuits for Simulation
I
V0
R0
Marking on Product
MDD312-20N1
Package
Y1-CU
Y1-CU
Y1-CU
Y1-CU
Y1-CU
* on die level
Delivery Mode
Box
Code No.
467251
Voltage class
1200
1400
1600
1800
2200
T VJ = 150 °C
Rectifier
V 0 max
threshold voltage
0.8
V
R0 max
slope resistance *
0.4
mΩ
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Quantity
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20160426h
MDD312-20N1
Outlines Y1
SW 13
43
10
32 +0
-1,9
52 +0
-1,4
49
2
M8 x 20
35
28.5
1
2
38
50
22.5
45 67
18
20
3
6.2
80
92
115
Optional accessories for modules
Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red
Type ZY 180L (L = Left for pin pair 4/5)
UL 758, style 3751
Type ZY 180R (R = Right for pin pair 6/7)
2
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
1
3
Data according to IEC 60747and per semiconductor unless otherwise specified
20160426h
MDD312-20N1
Rectifier
106
10000
DC
180 ° sin
120 °
60 °
30 °
500
50 Hz
80 % VRRM
TVJ = 45°C
TVJ = 150°C
8000
IFSM
VR = 0 V
400
IFAVM
I2t
6000
300
TVJ = 45°C
2
[A]
[A s]
[A]
200
TVJ = 150°C
4000
100
105
2000
0.01
0.1
1
0
1
10
t [s]
0
25
50
t [ms]
Fig. 2 I2t versus time (1-10 ms)
Fig. 1 Surge overload current
IFSM: Crest value, t: duration
75
Fig. 3 Maximum forward current
at case temperature
600
600
TVJ = 125°C
VR = 600 V
R thKA K/W
0.06
0.1
0.2
0.3
0.4
0.6
0.8
500
400
Ptot
500
400
IRM
300
300
DC
180 ° sin
120 °
60 °
30 °
[W]
200
[A]
IF = 400 A
200
100
100
0
0
0
100
200
300
400
500
0
25
IFAVM [A]
50
75
100
125
150
0
50
TA [°C]
100
150
200
di F /dt [A/µs]
Fig. 5 Typ. peak reverse current
Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode)
25
1750
TVJ = 125°C
VR = 600 V
R thKA K/W
1500
0.04
0.06
0.08
0.12
0.2
0.3
0.5
1250
Ptot
100 125 150
TC [°C]
R
L
1000
20
trr
15
[W]
[µs]
750
IF = 400 A
10
Circuit
B2U
2 x MDD312
500
5
250
0
0
0
100 200 300 400 500 600
0
IdAVM [A]
25
50
75
100
125
150
TA [°C]
Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current
and ambient temperature R = resistive load, L = inductive load
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
0
50
100
150
200
diF /dt [A/µs]
Fig. 7 Typ. recovery time trr
versus -diF /dt
Data according to IEC 60747and per semiconductor unless otherwise specified
20160426h
MDD312-20N1
Rectifier
3000
R thKA K/W
0.03
0.06
0.1
0.15
0.2
0.3
0.4
2500
2000
Ptot
1500
[W]
Circuit
B6U
3 x M DD 312
1000
500
0
0
200
400
600
800
0
25
50
75
100
125
150
TA [°C]
IFAVM [A]
Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature
0.20
RthJC for various conduction angles d:
RthJC [K/W]
d
0.120
DC
180°
0.128
0.135
120°
0.153
60°
30°
0.185
0.15
ZthJC
0.10
30°
60°
120°
180°
DC
[K/W]
0.05
0.00
10-3
10-2
10-1
100
Constants for ZthJC calculation:
101
102
i
1
2
3
4
Rthi (K/W)
0.0058
0.0310
0.0720
0.0112
ti (s)
0.00054
0.09800
0.54000
12.0000
t [s]
Fig. 9 Transient thermal impedance junction to case (per diode)
0.25
RthJK for various conduction angles d:
RthJK [K/W]
d
0.160
DC
180°
0.168
0.175
120°
0.193
60°
30°
0.225
0.20
ZthJK
0.15
[K/W]
0.10
30°
60°
120°
180°
DC
0.05
0.00
10-3
10-2
10-1
100
101
t [s]
Constants for ZthJK calculation:
102
i
1
2
3
4
5
Rthi (K/W)
0.0058
0.0310
0.0720
0.0112
0.0400
ti (s)
0.00054
0.09800
0.54000
12.0000
12.0000
Fig. 10 Transient thermal impedance junction to heatsink (per diode)
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20160426h