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MDD312-20N1 High Voltage Standard Rectifier Module VRRM = 2x 2000 V I FAV = 310 A VF = 1.03 V Phase leg Part number MDD312-20N1 Backside: isolated 2 1 3 Features / Advantages: Applications: Package: Y1 ● Package with DCB ceramic ● Improved temperature and power cycling ● Planar passivated chips ● Very low forward voltage drop ● Very low leakage current ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling Terms Conditions of usage: The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns the specific application of your product, please contact your local sales office. Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office. Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend - to perform joint risk and quality assessments; - the conclusion of quality agreements; - to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures. IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160426h MDD312-20N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C VRRM max. repetitive reverse blocking voltage TVJ = 25°C 2000 IR reverse current VF forward voltage drop min. typ. VR = 2000 V TVJ = 25°C 500 µA TVJ = 150°C 30 mA I F = 300 A TVJ = 25°C 1.13 V 1.33 V 1.03 V TVJ = 125 °C I F = 300 A I F = 600 A I FAV average forward current TC = 100 °C I F(RMS) RMS forward current 180° sine VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved 1.29 V T VJ = 150 °C 310 A 520 A TVJ = 150 °C 0.80 V 0.6 mΩ d = 0.5 for power loss calculation only R thCH V VR = 2000 V I F = 600 A Ptot max. Unit 2100 V 0.12 K/W K/W 0.04 TC = 25°C 1040 W t = 10 ms; (50 Hz), sine TVJ = 45°C 10.8 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 11.7 kA t = 10 ms; (50 Hz), sine TVJ = 150 °C 9.18 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 9.92 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 583.2 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V 566.1 kA²s t = 10 ms; (50 Hz), sine TVJ = 150 °C 421.4 kA²s t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 700 V; f = 1 MHz TVJ = 25°C 409.0 kA²s 288 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20160426h MDD312-20N1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -40 typ. max. 600 Unit A -40 150 °C -40 125 °C 125 °C 680 Weight g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App terminal to terminal creepage distance on surface | striking distance through air terminal to backside d Spb/Apb VISOL t = 1 second isolation voltage t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 mm 16.0 mm 3600 V 3000 V Prod. Index Date Code Circuit yywwAA Part Number Lot.No: xxxxxx Data Matrix: Typ (1-19), DC+Prod.Index (20-25), FKT# (26-31) leer (33), lfd.# (33-36) Ordering Standard Ordering Number MDD312-20N1 Similar Part MDD312-12N1 MDD312-14N1 MDD312-16N1 MDD312-18N1 MDD312-22N1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MDD312-20N1 Package Y1-CU Y1-CU Y1-CU Y1-CU Y1-CU * on die level Delivery Mode Box Code No. 467251 Voltage class 1200 1400 1600 1800 2200 T VJ = 150 °C Rectifier V 0 max threshold voltage 0.8 V R0 max slope resistance * 0.4 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20160426h MDD312-20N1 Outlines Y1 SW 13 43 10 32 +0 -1,9 52 +0 -1,4 49 2 M8 x 20 35 28.5 1 2 38 50 22.5 45 67 18 20 3 6.2 80 92 115 Optional accessories for modules Keyed gate/cathode twin plugs with wire length = 350 mm, gate = white, cathode = red Type ZY 180L (L = Left for pin pair 4/5) UL 758, style 3751 Type ZY 180R (R = Right for pin pair 6/7) 2 IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved 1 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20160426h MDD312-20N1 Rectifier 106 10000 DC 180 ° sin 120 ° 60 ° 30 ° 500 50 Hz 80 % VRRM TVJ = 45°C TVJ = 150°C 8000 IFSM VR = 0 V 400 IFAVM I2t 6000 300 TVJ = 45°C 2 [A] [A s] [A] 200 TVJ = 150°C 4000 100 105 2000 0.01 0.1 1 0 1 10 t [s] 0 25 50 t [ms] Fig. 2 I2t versus time (1-10 ms) Fig. 1 Surge overload current IFSM: Crest value, t: duration 75 Fig. 3 Maximum forward current at case temperature 600 600 TVJ = 125°C VR = 600 V R thKA K/W 0.06 0.1 0.2 0.3 0.4 0.6 0.8 500 400 Ptot 500 400 IRM 300 300 DC 180 ° sin 120 ° 60 ° 30 ° [W] 200 [A] IF = 400 A 200 100 100 0 0 0 100 200 300 400 500 0 25 IFAVM [A] 50 75 100 125 150 0 50 TA [°C] 100 150 200 di F /dt [A/µs] Fig. 5 Typ. peak reverse current Fig. 4 Power dissipation vs. forward current & ambient temperature (per diode) 25 1750 TVJ = 125°C VR = 600 V R thKA K/W 1500 0.04 0.06 0.08 0.12 0.2 0.3 0.5 1250 Ptot 100 125 150 TC [°C] R L 1000 20 trr 15 [W] [µs] 750 IF = 400 A 10 Circuit B2U 2 x MDD312 500 5 250 0 0 0 100 200 300 400 500 600 0 IdAVM [A] 25 50 75 100 125 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved 0 50 100 150 200 diF /dt [A/µs] Fig. 7 Typ. recovery time trr versus -diF /dt Data according to IEC 60747and per semiconductor unless otherwise specified 20160426h MDD312-20N1 Rectifier 3000 R thKA K/W 0.03 0.06 0.1 0.15 0.2 0.3 0.4 2500 2000 Ptot 1500 [W] Circuit B6U 3 x M DD 312 1000 500 0 0 200 400 600 800 0 25 50 75 100 125 150 TA [°C] IFAVM [A] Fig. 8 Three phase rectifier bridge: Power dissipation vs. direct output current & ambient temperature 0.20 RthJC for various conduction angles d: RthJC [K/W] d 0.120 DC 180° 0.128 0.135 120° 0.153 60° 30° 0.185 0.15 ZthJC 0.10 30° 60° 120° 180° DC [K/W] 0.05 0.00 10-3 10-2 10-1 100 Constants for ZthJC calculation: 101 102 i 1 2 3 4 Rthi (K/W) 0.0058 0.0310 0.0720 0.0112 ti (s) 0.00054 0.09800 0.54000 12.0000 t [s] Fig. 9 Transient thermal impedance junction to case (per diode) 0.25 RthJK for various conduction angles d: RthJK [K/W] d 0.160 DC 180° 0.168 0.175 120° 0.193 60° 30° 0.225 0.20 ZthJK 0.15 [K/W] 0.10 30° 60° 120° 180° DC 0.05 0.00 10-3 10-2 10-1 100 101 t [s] Constants for ZthJK calculation: 102 i 1 2 3 4 5 Rthi (K/W) 0.0058 0.0310 0.0720 0.0112 0.0400 ti (s) 0.00054 0.09800 0.54000 12.0000 12.0000 Fig. 10 Transient thermal impedance junction to heatsink (per diode) IXYS reserves the right to change limits, conditions and dimensions. © 2016 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20160426h