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Download MDO600-16N1 Datasheet
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MDO600-16N1 Standard Rectifier Module VRRM = 1600 V I FAV = 608 A VF = 1.01 V Single Diode Part number MDO600-16N1 Backside: isolated 2 3 Features / Advantages: Applications: Package: Y1 ● Planar passivated chips ● Very low leakage current ● Very low forward voltage drop ● Improved thermal behaviour ● Diode for main rectification ● For single and three phase bridge configurations ● Supplies for DC power equipment ● Input rectifiers for PWM inverter ● Battery DC power supplies ● Field supply for DC motors ● Isolation Voltage: 3600 V~ ● Industry standard outline ● RoHS compliant ● Base plate: Copper internally DCB isolated ● Advanced power cycling IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140204a MDO600-16N1 Ratings Rectifier Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25°C max. 1700 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25°C 1600 V IR reverse current VF forward voltage drop min. typ. VR = 1600 V TVJ = 25°C 1 mA VR = 1600 V TVJ = 140°C 30 mA I F = 600 A TVJ = 25°C 1.12 V 1.30 V 1.01 V I F = 1200 A TVJ = 125 °C I F = 600 A I F = 1200 A I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case TC = 85°C 180° sine R thCH thermal resistance case to heatsink total power dissipation I FSM max. forward surge current I²t CJ value for fusing junction capacitance IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved V 608 A TVJ = 140 °C 0.76 V d = 0.5 for power loss calculation only Ptot 1.23 T VJ = 140 °C 0.32 mΩ 0.072 K/W 0.024 K/W TC = 25°C 1600 W t = 10 ms; (50 Hz), sine TVJ = 45°C 15.0 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 16.2 kA t = 10 ms; (50 Hz), sine TVJ = 140 °C 12.8 kA t = 8,3 ms; (60 Hz), sine VR = 0 V 13.8 kA t = 10 ms; (50 Hz), sine TVJ = 45°C 1.13 MA²s t = 8,3 ms; (60 Hz), sine t = 10 ms; (50 Hz), sine VR = 0 V 1.09 MA²s 812.8 kA²s TVJ = 140 °C t = 8,3 ms; (60 Hz), sine VR = 0 V VR = 400 V; f = 1 MHz TVJ = 25°C 788.8 kA²s 762 Data according to IEC 60747and per semiconductor unless otherwise specified pF 20140204a MDO600-16N1 Package Ratings Y1 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature max. 600 Unit A -40 140 °C -40 125 °C Tstg storage temperature -40 125 °C Weight typ. 650 g MD mounting torque 4.5 7 Nm MT terminal torque 11 13 Nm d Spp/App d Spb/Apb VISOL terminal to terminal creepage distance on surface | striking distance through air terminal to backside t = 1 second isolation voltage Circuit Diagram PART NUMBER mm 25.0 mm 3600 V 3000 V Made in Germany t = 1 minute 50/60 Hz, RMS; IISOL ≤ 1 mA 16.0 ywwH Date Code Prod. Index Ordering Standard Part Number MDO600-16N1 Equivalent Circuits for Simulation I V0 R0 Marking on Product MDO600-16N1 * on die level Delivery Mode Box Code No. 509707 T VJ = 140 °C Rectifier V 0 max threshold voltage 0.76 V R 0 max slope resistance * 0.13 mΩ IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Quantity 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20140204a MDO600-16N1 Outlines Y1 43 49 35 28.5 4567 50 22.5 1 2 38 52 +0 -1,4 M8 x20 3 6.2 80 92 2 IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved 3 Data according to IEC 60747and per semiconductor unless otherwise specified 20140204a MDO600-16N1 Rectifier 107 14000 1000 VR = 0V 900 12000 ITSM 800 50 Hz 80 % VRRM TVJ = 45°C TVJ = 140°C 10000 DC 180° sin 120° 60° 30° 700 I2 t 8000 IFAVM 106 2 6000 TVJ = 45°C [A s] [A] 500 [A] 400 300 TVJ = 140°C 4000 600 200 2000 100 105 0 0.001 0.01 0.1 0 1 1 10 0 2 Fig. 1 Surge overload current IFSM: Crest value, t: duration 50 75 100 125 150 TC [A] t [ms] t [s] 25 Fig. 3 Max. forward current at case temperature Fig. 2 I t versus time (1-10 ms) 1600 1200 R thKA K/W 800 Ptot 600 [W] 400 1400 0.03 0.07 0.12 0.2 0.3 0.4 0.6 1000 1200 IF 1000 [A] 800 DC 180° sin 120° 60° 30° 600 400 TVJ = 125°C 200 TVJ = 25°C 200 0 0 200 400 600 800 0 25 50 IFAVM [A] 75 100 125 150 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 VF [V] TA [°C] Fig. 4 Power dissipation vs. forward current and ambient temperature Fig. 5 Forward current IF vs. VF 3200 R 2800 R thKA K/W L 0.015 0.03 0.04 0.05 0.07 0.01 0.14 2400 Ptot [W] 2000 1600 1200 Circuit B2 4xMDO600 800 400 0 0 300 600 900 1200 0 IFAVM [A] 25 50 75 100 125 150 TA [°C] Fig. 6 Single phase rectifier bridge: Power dissipation vs. direct output current and ambient temperature R = resistive load, L = inductive load IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140204a MDO600-16N1 Rectifier 5000 R thKA K/W 4500 0.01 0.02 0.03 0.045 0.06 0.08 0.12 4000 3500 Ptot [W] 3000 2500 2000 Circuit B6 6xMDO600 1500 1000 500 0 0 300 600 900 1200 1500 0 25 50 75 100 125 150 TA [°C] IdAVM [A] Fig. 7 Three phase rectifier bridge: Power dissipation versus direct output current and ambient temperature 0.12 RthJC for various conduction angles d: 0.10 d RthJC (K/W) DC 0.072 180° 0.0768 120° 0.081 60° 0.092 30° 0.111 0.08 ZthJC 0.06 30° 60° 120° 180° DC [K/W] 0.04 Constants for ZthJC calculation: i Rthi (K/W) 0.02 0.00 10-3 10-2 10-1 100 101 102 t [s] 1 2 3 4 0.0035 0.0186 0.0432 0.0067 ti (s) 0.0054 0.098 0.54 12 Fig. 8 Transient thermal impedance junction to case 0.14 RthJK for various conduction angles d: 0.12 d RthJK (K/W) DC 0.096 180°C 0.1 120°C 0.105 60°C 0.116 30°C 0.135 0.10 ZthJK [K/W] 0.08 0.06 30° 60° 120° 180° DC 0.04 0.02 0.00 10-3 10-2 10-1 100 Constants for ZthJK calculation: 101 t [s] 102 i 1 2 3 4 5 Rthi (K/W) ti (s) 0.0035 0.0054 0.0186 0.098 0.0432 0.54 0.067 12 0.024 12 Fig. 9 Transient thermal impedance junction to heatsink IXYS reserves the right to change limits, conditions and dimensions. © 2014 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20140204a