full paper
... named LTspice without any restrictions. It can be downloaded from the web without any problems or fees, but its usage is a little tricky – a mixture of command lines, GUI (graphics user interface), and mouse clicks. There are many tutorials available for students and engineers. In the transient and ...
... named LTspice without any restrictions. It can be downloaded from the web without any problems or fees, but its usage is a little tricky – a mixture of command lines, GUI (graphics user interface), and mouse clicks. There are many tutorials available for students and engineers. In the transient and ...
AP8800 Description Pin Assignments
... top layer and thermal vias to bottom layer ground plane. For better thermal performance, larger copper pad for heat-sink is needed. ...
... top layer and thermal vias to bottom layer ground plane. For better thermal performance, larger copper pad for heat-sink is needed. ...
AN10289 LPC900 external crystal start-up Rev. 01 — 27 April 2004 Application note
... LPC900 family by adding an external biasing resistor. Biasing the external crystal oscillator will result in a more robust start-up. This document takes a close look at the characteristics of the LPC900 high frequency oscillator such as the DC characteristics of the LPC900 family’s high frequency os ...
... LPC900 family by adding an external biasing resistor. Biasing the external crystal oscillator will result in a more robust start-up. This document takes a close look at the characteristics of the LPC900 high frequency oscillator such as the DC characteristics of the LPC900 family’s high frequency os ...
v I
... Drift – movement of carriers due to the existence of electric field Diffusion – movement of carriers due to gradient in concentrations ...
... Drift – movement of carriers due to the existence of electric field Diffusion – movement of carriers due to gradient in concentrations ...
Effectiveness of Using Supply Voltage as Back
... challenging even with a supply voltage (0.5V) far below the p-n junction turn-on voltage (Vpn, ~0.9V at low temperatures) because Vpn reduces significantly with increase in temperature (Fig. 3). Thus, the DBB scheme in bulk CMOS technology is limited to either low temperature operations where Vpn is ...
... challenging even with a supply voltage (0.5V) far below the p-n junction turn-on voltage (Vpn, ~0.9V at low temperatures) because Vpn reduces significantly with increase in temperature (Fig. 3). Thus, the DBB scheme in bulk CMOS technology is limited to either low temperature operations where Vpn is ...
ZXCT1081 High voltage high
... When choosing appropriate values for RSENSE a compromise must be reached between in-line signal loss (including potential power dissipation effects) and small signal accuracy. Higher values for RSENSE gives better accuracy at low load currents by reducing the inaccuracies due to internal offsets. Fo ...
... When choosing appropriate values for RSENSE a compromise must be reached between in-line signal loss (including potential power dissipation effects) and small signal accuracy. Higher values for RSENSE gives better accuracy at low load currents by reducing the inaccuracies due to internal offsets. Fo ...
Effect of Gate Electrode Work-Function on Source Charge Injection in Electrolyte-Gated
... Organic field-effect transistors (OFETs) based on solution-processed semiconducting materials have undergone tremendous progress in recent years, primarily driven by the need for a low-cost electronics platform.[1] These progresses relate to both over-all device performance and also reliability, whi ...
... Organic field-effect transistors (OFETs) based on solution-processed semiconducting materials have undergone tremendous progress in recent years, primarily driven by the need for a low-cost electronics platform.[1] These progresses relate to both over-all device performance and also reliability, whi ...
Light Emitting Diodes (LED`s)
... LED combined in one package with three leads. They are called tricolour because mixed red and green light appears to be yellow and this is produced when both the red and green LEDs are on. The diagram shows the construction of a tri - colour LED. Note the different lengths of the three leads. The ce ...
... LED combined in one package with three leads. They are called tricolour because mixed red and green light appears to be yellow and this is produced when both the red and green LEDs are on. The diagram shows the construction of a tri - colour LED. Note the different lengths of the three leads. The ce ...
Bus Edison High Speed Fuse Application
... of the three phase double Wye (star) arrangement with interphase transformer, the voltage rating of the fuse must be twice the line to neutral voltage. For large rectifiers multi-parallel paths are used each with its associated fuse. In such applications the fuselink is used to isolate a faulty semi ...
... of the three phase double Wye (star) arrangement with interphase transformer, the voltage rating of the fuse must be twice the line to neutral voltage. For large rectifiers multi-parallel paths are used each with its associated fuse. In such applications the fuselink is used to isolate a faulty semi ...
Basic Logic Devices
... Then C is 0 or false If we are to express this using bubbles to indicate inversion First the basic logic function is an OR so we draw that ...
... Then C is 0 or false If we are to express this using bubbles to indicate inversion First the basic logic function is an OR so we draw that ...
QS5U27
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
AP7115
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
... Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. LIFE SUPPORT Diodes Incorporated products are specifically n ...
PAM2310 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
AP1603 STEP-UP DC/DC CONVERTER Description
... through the diode to the output capacitor and load. As the stored energy is depleted, the current ramp down until the diode turns off. At this point, inductor may ring due to residual energy and stray capacitance. The output capacitor stores charge when current flow through the diode is high, and re ...
... through the diode to the output capacitor and load. As the stored energy is depleted, the current ramp down until the diode turns off. At this point, inductor may ring due to residual energy and stray capacitance. The output capacitor stores charge when current flow through the diode is high, and re ...
Measurement of Elastic Constants of Liquid Crystal Material
... The Frank elastic constants* are determined by applying an external field to the liquid crystal cell in a direction perpendicular to the director orientation fixed by surface anchoring forces. When the field is small, the liquid crystal will not deform because the torque caused by the external field ...
... The Frank elastic constants* are determined by applying an external field to the liquid crystal cell in a direction perpendicular to the director orientation fixed by surface anchoring forces. When the field is small, the liquid crystal will not deform because the torque caused by the external field ...
MONOLITHIC DETECTORS ADVANCED CMOS MANUFACTURING W. Snoeys
... Can be done in any CMOS technology with deep Nwell (triple well) Apply high reverse substrate voltage (eg -60 V) Well protects transistors from HV Charge is collected by drift, good for radiation tolerance Risk of coupling circuit signals into input In-pixel circuit simple in small colle ...
... Can be done in any CMOS technology with deep Nwell (triple well) Apply high reverse substrate voltage (eg -60 V) Well protects transistors from HV Charge is collected by drift, good for radiation tolerance Risk of coupling circuit signals into input In-pixel circuit simple in small colle ...
SSR2-2X SER Y Ü A2957 R13 A2958 R2.FH9
... mounting rails : 0.3 kg. (for EF 10T) 0.1 kg. (for EF 10) ...
... mounting rails : 0.3 kg. (for EF 10T) 0.1 kg. (for EF 10) ...
DS90LV011A - Texas Instruments
... applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask ...
... applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguards. TI does not warrant or represent that any license, either express or implied, is granted under any patent right, copyright, mask ...
KG3418451855
... According to Moore's law, the dimensions of individual devices in an integrated circuit have been decreased by a factor of approximately two every two years. This scaling down of devices has been the driving force in technological advances since late 20th century. However, as noted by ITRS 2009 edit ...
... According to Moore's law, the dimensions of individual devices in an integrated circuit have been decreased by a factor of approximately two every two years. This scaling down of devices has been the driving force in technological advances since late 20th century. However, as noted by ITRS 2009 edit ...
Li, W., and D.J. Perreault, “FITMOS Modeling and On-resistance AC Characteristic Evaluation,” 2010 IEEE Energy Conversion Congress and Exposition , pp. 378-385, Sept. 2010.
... rapidly switched from forward biased to reverse biased. The diode has to sweep out the excessive minority carriers in the junction before it can block a large negative voltage. So this behavior does not only add more loss from discharging the excess minority carriers, but also increases the switchin ...
... rapidly switched from forward biased to reverse biased. The diode has to sweep out the excessive minority carriers in the junction before it can block a large negative voltage. So this behavior does not only add more loss from discharging the excess minority carriers, but also increases the switchin ...
QS6K1
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
US5U2
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
DATA SHEET BCX71 series PNP general purpose transistors
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
PAM2321 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.