Orderly power-up of XC87x and XC85x devices
... The normal situation, where power is applied to the application and it stays on for a long period, is not a problem providing that all inputs to the device are kept within the VDDP limits. An example scenario is pictured in Figure 3 (‘Bad Practice’) and Figure 4 (‘Good Practice’), where there is an ...
... The normal situation, where power is applied to the application and it stays on for a long period, is not a problem providing that all inputs to the device are kept within the VDDP limits. An example scenario is pictured in Figure 3 (‘Bad Practice’) and Figure 4 (‘Good Practice’), where there is an ...
i B - Muhazam
... • There are a few parameters of interest, like input and output resistance, but for the purpose of non-EE class, we will do only AC gain (current and voltage) • AC analysis is done after biasing is completed and assuming there is some AC signal being introduced into the circuit as superimpose on top ...
... • There are a few parameters of interest, like input and output resistance, but for the purpose of non-EE class, we will do only AC gain (current and voltage) • AC analysis is done after biasing is completed and assuming there is some AC signal being introduced into the circuit as superimpose on top ...
RA01L9595M 数据资料DataSheet下载
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
... 2.RA series products (RF power amplifier modules) are designed for consumer mobile communication terminals and were not specifically designed for use in other applications. In particular, while these products are highly reliable for their designed purpose, they are not manufactured under a quality a ...
W04406104107
... This approach is based on the fact that high Vth transistors are slow but have less leakage and low Vth transistors are fast but have high leakages. So, here appropriate combination of these is used as required. The techniques using this approach are given here. Dual-Vth assignment is one such techn ...
... This approach is based on the fact that high Vth transistors are slow but have less leakage and low Vth transistors are fast but have high leakages. So, here appropriate combination of these is used as required. The techniques using this approach are given here. Dual-Vth assignment is one such techn ...
Introduction
... are two wires both “1” - make another be “1” (AND) is at least one of two wires “1” - make another be “1” (OR) is a wire “1” - then make another be “0” (NOT) ...
... are two wires both “1” - make another be “1” (AND) is at least one of two wires “1” - make another be “1” (OR) is a wire “1” - then make another be “0” (NOT) ...
ZXLD383 Summary A Product Line of
... in Garden Light applications. A block diagram is shown for the ZXLD383 in Figure 1. With power applied and the enable pin held at VCC, an oscillator within the pulse control block forces the internal switching transistor to switch on to start an energy charge cycle. The low saturation voltage switch ...
... in Garden Light applications. A block diagram is shown for the ZXLD383 in Figure 1. With power applied and the enable pin held at VCC, an oscillator within the pulse control block forces the internal switching transistor to switch on to start an energy charge cycle. The low saturation voltage switch ...
DT1140-04LP Features Mechanical Data
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
Diode Circuits
... The rectified signal is now a combination of an AC signal and a DC component. Generally, it is the DC part of a rectified signal that is of interest, and the un-welcomed AC component is described as ripple. It is desirable to move the ripple to high frequencies where it is easier to remove by a low- ...
... The rectified signal is now a combination of an AC signal and a DC component. Generally, it is the DC part of a rectified signal that is of interest, and the un-welcomed AC component is described as ripple. It is desirable to move the ripple to high frequencies where it is easier to remove by a low- ...
AP2331 0.2A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH Description
... down to approximately +20°C before the output is turned back on. This built-in thermal hysteresis feature is an excellent feature, as it avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in this manner until the load fault is removed, resulting in a pul ...
... down to approximately +20°C before the output is turned back on. This built-in thermal hysteresis feature is an excellent feature, as it avoids undesirable oscillations of the thermal protection circuit. The switch continues to cycle in this manner until the load fault is removed, resulting in a pul ...
PAM2316 Description Pin Assignments
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
... In continuous mode, the source current of the top MOSFET is a square wave of duty cycle VOUT/VIN. To prevent large voltage transients, a low ESR input capacitor sized for the maximum RMS current must be used. The maximum RMS capacitor current is given by: ...
LM109/LM309 5-Volt Regulator (Rev. A)
... 2V of the unregulated input if the ground pin does not make contact, possibly damaging the load. The LM109 may also be damaged if a large output capacitor is charged up, then discharged through the internal clamp zener when the ground pin makes contact. 3. The output clamp zener is designed to absor ...
... 2V of the unregulated input if the ground pin does not make contact, possibly damaging the load. The LM109 may also be damaged if a large output capacitor is charged up, then discharged through the internal clamp zener when the ground pin makes contact. 3. The output clamp zener is designed to absor ...
Power MOSFET Basics
... A schematic the gate charge test circuit and its waveform is shown in Figure 8. In this circuit a constant gate current source Ig charges the gate of the device under test, while drain current ID is sourced. Measuring VGS vs. gate charging time provides a direct indication of the energy spent to swi ...
... A schematic the gate charge test circuit and its waveform is shown in Figure 8. In this circuit a constant gate current source Ig charges the gate of the device under test, while drain current ID is sourced. Measuring VGS vs. gate charging time provides a direct indication of the energy spent to swi ...
CP4201612617
... III. PROPOSED TECHNIQUE MODIFIED LECTOR TECHNIQUE In LECTOR technique two leakage control transistors (one p-type and one n-type) are introduced between pull-up and pull-down circuit within the logic gate for which the gate terminal of each leakage control transistor (LCT) is controlled by the sourc ...
... III. PROPOSED TECHNIQUE MODIFIED LECTOR TECHNIQUE In LECTOR technique two leakage control transistors (one p-type and one n-type) are introduced between pull-up and pull-down circuit within the logic gate for which the gate terminal of each leakage control transistor (LCT) is controlled by the sourc ...
DATA SHEET PMST2222; PMST2222A NPN switching transistors
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
RF3934 120W GaN WIDEBAND POWER AMPLIFIER Features
... cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publicati ...
... cause permanent damage to the device. Extended application of Absolute Maximum Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied. The information in this publicati ...
Synthesis, Growth and characterization of L-Histidine
... Key words: Single crystal; XRD; microhardness; dielectric constant; thermal studies; NLO ...
... Key words: Single crystal; XRD; microhardness; dielectric constant; thermal studies; NLO ...
sn54/74hct cmos logic family applications and
... and the HC high-level input voltage (VIH). This problem can be solved in three different ways. The first way is to use HCT devices with their TTL-compatible input voltages to interface between TTL and HC circuits. Another solution is to provide pullup resistors at the TTL outputs to ensure an adequa ...
... and the HC high-level input voltage (VIH). This problem can be solved in three different ways. The first way is to use HCT devices with their TTL-compatible input voltages to interface between TTL and HC circuits. Another solution is to provide pullup resistors at the TTL outputs to ensure an adequa ...
IGBT or MOSFET: Choose Wisely
... With the proliferation of choices between MOSFETs and IGBTs, it is becoming increasingly difficult for today’s designer to select the best device for their application. Here are a few basic guidelines that will help this decisionmaking process. ...
... With the proliferation of choices between MOSFETs and IGBTs, it is becoming increasingly difficult for today’s designer to select the best device for their application. Here are a few basic guidelines that will help this decisionmaking process. ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.