The MOSFET Current M..
... Since Vs 0 , we find that from the above equation, the drain voltage must be: ...
... Since Vs 0 , we find that from the above equation, the drain voltage must be: ...
AP7335A-50 N E W P R O D U C T 300mA, LOW QUIESCENT
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
... Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: ...
US5U1
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
The CMOS Inverter
... Use equivalent circuits for MOS transistors Ideal switch + capacitance and ON resistance Unit nMOS has resistance R, capacitance C Unit pMOS has resistance 2R, capacitance C ...
... Use equivalent circuits for MOS transistors Ideal switch + capacitance and ON resistance Unit nMOS has resistance R, capacitance C Unit pMOS has resistance 2R, capacitance C ...
MMST3904
... No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Up ...
... No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Up ...
Labf2003_5 - University of Kentucky College of Engineering
... CJO = 23pF, VJ = 0.7V, m = 0.336, and T =5s. The source consists of a DC part and an AC part, which in SPICE can be created with a single transient source. Make the AC part of the source 1V P-P at 100kHz. For the simulation set up, determine a good step size for this simulation, and explain what b ...
... CJO = 23pF, VJ = 0.7V, m = 0.336, and T =5s. The source consists of a DC part and an AC part, which in SPICE can be created with a single transient source. Make the AC part of the source 1V P-P at 100kHz. For the simulation set up, determine a good step size for this simulation, and explain what b ...
lecture1426861925
... larger the values of work function, more difficult it is for the electrons to escape from the metal. In other words, if the difference between Fermi level and the escape level is large, the emission is relatively small. The value of work function can be estimated from measurements of emission curren ...
... larger the values of work function, more difficult it is for the electrons to escape from the metal. In other words, if the difference between Fermi level and the escape level is large, the emission is relatively small. The value of work function can be estimated from measurements of emission curren ...
DATA SHEET BC859W; BC860W PNP general purpose transistors
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
... Suitability for use ⎯ NXP Semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an NXP Semiconductors product can reasonably be expected to result i ...
TGA4539-SM 数据资料DataSheet下载
... the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such ...
... the user. All information contained herein is subject to change without notice. Customers should obtain and verify the latest relevant information before placing orders for TriQuint products. The information contained herein or any use of such ...
TGA4832 数据资料DataSheet下载
... AGC amplifier which operates from DC to 35 GHz. Typical small signal gain is 12dB with 3dB AGC range. Typical input and output return losses are >10dB. The TGA4832 provides 18 dBm of output power at 1 dB gain compression. Drain bias may be applied through the output port for best efficiency or throu ...
... AGC amplifier which operates from DC to 35 GHz. Typical small signal gain is 12dB with 3dB AGC range. Typical input and output return losses are >10dB. The TGA4832 provides 18 dBm of output power at 1 dB gain compression. Drain bias may be applied through the output port for best efficiency or throu ...
Application Note
... In lighting applications for fluorescent lamps the choice of the starter switch to be used is always very important for the designers: the cost, reliability, ruggedness, and ease to be driven must always be kept in mind. This is especially important in lighting circuits where the designer has to opt ...
... In lighting applications for fluorescent lamps the choice of the starter switch to be used is always very important for the designers: the cost, reliability, ruggedness, and ease to be driven must always be kept in mind. This is especially important in lighting circuits where the designer has to opt ...
net - Open Circuit Design
... NET is a macro-based language for describing networks of sized transistors. Names in NET refer to nodes, which presumably get interconnected by the user through transistors. A node name has two forms (n width length) n is the name of the network node, length and width specify a transistor size -- th ...
... NET is a macro-based language for describing networks of sized transistors. Names in NET refer to nodes, which presumably get interconnected by the user through transistors. A node name has two forms (n width length) n is the name of the network node, length and width specify a transistor size -- th ...
MK3724
... IDT manufactures the largest variety of VCXO based timing devices for all applications. Consult IDT to eliminate VCXOs, crystals, and oscillators from your board. The frequency of the on-chip VCXO is adjusted by an external control voltage connected to VIN. Because VIN is a high impedance input, it ...
... IDT manufactures the largest variety of VCXO based timing devices for all applications. Consult IDT to eliminate VCXOs, crystals, and oscillators from your board. The frequency of the on-chip VCXO is adjusted by an external control voltage connected to VIN. Because VIN is a high impedance input, it ...
Soft Semiconductor Devices
... Acta Crystallographica C. 57, 939 (2001). (Right) The structure of the photosynthetic reaction center of Rhodobacter sphaeroides. Evolved over two billion years, this molecular circuit is the backbone of photosynthesis. The protein scaffold has been removed for clarity. Data is from Ermler, et al. S ...
... Acta Crystallographica C. 57, 939 (2001). (Right) The structure of the photosynthetic reaction center of Rhodobacter sphaeroides. Evolved over two billion years, this molecular circuit is the backbone of photosynthesis. The protein scaffold has been removed for clarity. Data is from Ermler, et al. S ...
Data Sheet WHITE LED STEP-UP CONVERTER AP3032 General
... Data Sheet WHITE LED STEP-UP CONVERTER ...
... Data Sheet WHITE LED STEP-UP CONVERTER ...
Active Components
... • Suppressor Grid. • Reduces “splashback” of electrons from plate to screen grid. • At or near cathode potential. • Often directly connected to cathode. • Low current. ...
... • Suppressor Grid. • Reduces “splashback” of electrons from plate to screen grid. • At or near cathode potential. • Often directly connected to cathode. • Low current. ...
Chapter 1 Principles of Solar Cell Operation
... Figure 1 (Continued) transmits most of the incident light to the absorber layer (Cu(In, Ga)Se2 or CdTe) where virtually all electronhole pairs are produced. The top contact is formed by a transparent conducting oxide. These solar cells are typically a few micrometers thick (Chapters Ic-2 and Ic-3). ...
... Figure 1 (Continued) transmits most of the incident light to the absorber layer (Cu(In, Ga)Se2 or CdTe) where virtually all electronhole pairs are produced. The top contact is formed by a transparent conducting oxide. These solar cells are typically a few micrometers thick (Chapters Ic-2 and Ic-3). ...
DATA SHEET BCX17; BCX18 PNP general purpose transistors
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
Data Sheet (current)
... 400ns for the Reset. During the timing cycle when the output is high, the further application of a trigger pulse will not effect the circuit so long as the trigger input is returned high at least 10µs before the end of the timing interval. However the circuit can be reset during this time by the app ...
... 400ns for the Reset. During the timing cycle when the output is high, the further application of a trigger pulse will not effect the circuit so long as the trigger input is returned high at least 10µs before the end of the timing interval. However the circuit can be reset during this time by the app ...
RMPA5255 4.9–5.9 GHz WLAN Linear Power Amplifier Module
... 2. Power Control bias current is included in the total quiescent current. 3. Measured from Device On signal turn on, (Logic Low) to the point where RF POUT stabilizes to 0.5dB. 4. POUT measured at PIN corresponding to power detection threshold. ...
... 2. Power Control bias current is included in the total quiescent current. 3. Measured from Device On signal turn on, (Logic Low) to the point where RF POUT stabilizes to 0.5dB. 4. POUT measured at PIN corresponding to power detection threshold. ...
A Broadband 10-GHz Track-and-Hold in Si/SiGe HBT Technology , Student Member, IEEE,
... final stage of downconversion prior to the analog-to-digital conversion as shown in Fig. 1. The sub-sampling stage has the most exacting requirements on linearity and noise, in addition to the extremely wide bandwidth requirements. At the same time, the increasing bandwidths of these systems put a g ...
... final stage of downconversion prior to the analog-to-digital conversion as shown in Fig. 1. The sub-sampling stage has the most exacting requirements on linearity and noise, in addition to the extremely wide bandwidth requirements. At the same time, the increasing bandwidths of these systems put a g ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.