CSPEMI201A 数据资料DataSheet下载
... pi−style filters (C−R−C) that reduce EMI/RFI emissions while at the same time providing ESD protection. This part is custom−designed to interface with a speaker port on a cellular telephone or similar device. Each high quality filter provides more than 35 dB attenuation in the 800−2700 MHz range. Th ...
... pi−style filters (C−R−C) that reduce EMI/RFI emissions while at the same time providing ESD protection. This part is custom−designed to interface with a speaker port on a cellular telephone or similar device. Each high quality filter provides more than 35 dB attenuation in the 800−2700 MHz range. Th ...
A Broadband 10-GHz Track-and-Hold in Si/SiGe HBT Technology , Student Member, IEEE,
... final stage of downconversion prior to the analog-to-digital conversion as shown in Fig. 1. The sub-sampling stage has the most exacting requirements on linearity and noise, in addition to the extremely wide bandwidth requirements. At the same time, the increasing bandwidths of these systems put a g ...
... final stage of downconversion prior to the analog-to-digital conversion as shown in Fig. 1. The sub-sampling stage has the most exacting requirements on linearity and noise, in addition to the extremely wide bandwidth requirements. At the same time, the increasing bandwidths of these systems put a g ...
Circuits with Transistors Contents 1 Transistors
... A class B power amplifier is an amplifier in which the transistor is polarized at the blockage point, in such a way that will operate in the linear region only half of the cycle (180o ). The advantage of this kind of setups is that the efficiency is bigger than in a class A amplifier, on the other h ...
... A class B power amplifier is an amplifier in which the transistor is polarized at the blockage point, in such a way that will operate in the linear region only half of the cycle (180o ). The advantage of this kind of setups is that the efficiency is bigger than in a class A amplifier, on the other h ...
EES Spec Sheet - Elliott Electric Supply
... Molded-in terminal identification letters Triple combination mounting screws, multiterminated design, accepts #8 to #14 solid or stranded conductors Seam between front cover and back cover is far from contact working area ...
... Molded-in terminal identification letters Triple combination mounting screws, multiterminated design, accepts #8 to #14 solid or stranded conductors Seam between front cover and back cover is far from contact working area ...
AP1121
... 3. See thermal regulation specifications for changes in output voltage due to heating effects. Line and load regulation are measured at a constant junction temperature by low duty cycle pulse testing. Load regulation is measured at the output lead = 1/18” from the package. 4. Line and load regulatio ...
... 3. See thermal regulation specifications for changes in output voltage due to heating effects. Line and load regulation are measured at a constant junction temperature by low duty cycle pulse testing. Load regulation is measured at the output lead = 1/18” from the package. 4. Line and load regulatio ...
FST3257 Quad 2:1 Multiplexer / Demultiplexer Bus Switch FST3257 — Quad 2:
... Quiescent Supply Current ...
... Quiescent Supply Current ...
DATA SHEET BF820; BF822 NPN high-voltage transistors
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
AL1696 Description Features Pin Assignments Applications
... overall LED driver solution’s size and optimize bom cost. The three different MOSFET options can cover most of 3~12W dimmable applications. The AL1696 internal MOSFET’s on time is limited by tON_MAX which is set through RT pin and internal 0.4V reference. The MOSFET will be turned off either its on- ...
... overall LED driver solution’s size and optimize bom cost. The three different MOSFET options can cover most of 3~12W dimmable applications. The AL1696 internal MOSFET’s on time is limited by tON_MAX which is set through RT pin and internal 0.4V reference. The MOSFET will be turned off either its on- ...
Practical Industrial Electronics for Engineers and Technicians
... direct current in one direction only. In other words, the diode exhibits a very low resistance when it is forward-biased and an extremely high resistance, when it is reverse-biased. Similarly in Chapter 7 we learned that an ohmmeter applies a known voltage from an internal source (batteries) to the ...
... direct current in one direction only. In other words, the diode exhibits a very low resistance when it is forward-biased and an extremely high resistance, when it is reverse-biased. Similarly in Chapter 7 we learned that an ohmmeter applies a known voltage from an internal source (batteries) to the ...
AN-6203 Applying SG6203 to Control a Synchronous Rectifier of a
... should be considered. The added synchronous MOSFET introduces a stray capacitor (CDS of MOSFET), which leads to a larger turn-off spike. This condition becomes even serious when the converter is operated under CCM. To overcome this side effect, re-design the transformer to reduce the turn-off voltag ...
... should be considered. The added synchronous MOSFET introduces a stray capacitor (CDS of MOSFET), which leads to a larger turn-off spike. This condition becomes even serious when the converter is operated under CCM. To overcome this side effect, re-design the transformer to reduce the turn-off voltag ...
Precision, Low-Side Current Measurement (Rev
... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
Abstract - Heidelberger Life
... flight the electrons collide with the gas atom electrons in an inelastic fashion. As a result of this interaction, electrons from the gas atoms are ionized and additional electrons are produced. These electrons again accelerate and a chain reaction is initiated. This electron avalanche upon arriving ...
... flight the electrons collide with the gas atom electrons in an inelastic fashion. As a result of this interaction, electrons from the gas atoms are ionized and additional electrons are produced. These electrons again accelerate and a chain reaction is initiated. This electron avalanche upon arriving ...
AC Induction Motor Control
... liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Freescale Semiconductor data sheets and/or specifications can a ...
... liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters which may be provided in Freescale Semiconductor data sheets and/or specifications can a ...
AN4067, Selecting L and C Components in the Power Stage of the
... disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating ...
... disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Freescale Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating ...
Sodium thiourea bromide
... functional substitution, inherently high nonlinearity and high damage resistance etc., A major drawback of crystalline organic materials are difficult in growing bulk size, optical quality single crystals and also, the fragile nature of these crystals makes them for difficult for the process in devi ...
... functional substitution, inherently high nonlinearity and high damage resistance etc., A major drawback of crystalline organic materials are difficult in growing bulk size, optical quality single crystals and also, the fragile nature of these crystals makes them for difficult for the process in devi ...
Flicker Noise in GaN/Al Ga N Doped Channel Heterostructure Field
... OLID-STATE power sources have been significantly improved in recent decades. However, with the continuous demand for higher current and voltage handling capacity, higher frequency band, and increased packing density, the Si-based devices seem to be approaching their theoretical limits of performance ...
... OLID-STATE power sources have been significantly improved in recent decades. However, with the continuous demand for higher current and voltage handling capacity, higher frequency band, and increased packing density, the Si-based devices seem to be approaching their theoretical limits of performance ...
GAZI UNIVERSITY FACULTY OF ENGINEERING DEPARTMENT OF
... File processing. Pointers and dynamic memory usage. The algorithms for solving fundamental mathematical problems, and implementation of these algorithms by using C++ programming language and a numerical computing environment (MATLAB). EEE 104E Logic Circuit Design (3+2) 4 Introduction to digital con ...
... File processing. Pointers and dynamic memory usage. The algorithms for solving fundamental mathematical problems, and implementation of these algorithms by using C++ programming language and a numerical computing environment (MATLAB). EEE 104E Logic Circuit Design (3+2) 4 Introduction to digital con ...
Circuits for multiple valued logic—A tutorial and appreciation
... gate is input~output incompatible, or at least subject to some question. If, for example, we had chosen our input logic values to correspond to +1.4, +0.7 and 0, the resulting outputs would be 0.7, 0.0 and -0.7. Thus, though partially compatible, the signals have also been partially down cycled. The ...
... gate is input~output incompatible, or at least subject to some question. If, for example, we had chosen our input logic values to correspond to +1.4, +0.7 and 0, the resulting outputs would be 0.7, 0.0 and -0.7. Thus, though partially compatible, the signals have also been partially down cycled. The ...
AP2337 1.0A SINGLE CHANNEL CURRENT-LIMITED LOAD SWITCH Description
... has tripped (reached the reverse current trip threshold), the current rises until IROCP level. When the fault exists for more than 600us, output device is disabled and shutdown. This is called the "Deglitch time from reverse current trigger to MOSFET turn off”. Recovery from IROCP occurs when the ou ...
... has tripped (reached the reverse current trip threshold), the current rises until IROCP level. When the fault exists for more than 600us, output device is disabled and shutdown. This is called the "Deglitch time from reverse current trigger to MOSFET turn off”. Recovery from IROCP occurs when the ou ...
TI_MSP430_Crystal Recommendations
... frequency for the microcontroller’s sleep mode, as well as your other circuitry that may require a timing reference. We can help you match the right crystal and you’ll have a reliable and accurate timing source. Micro Crystal has worked with TI to help you choose an ideal crystal for your circuit ap ...
... frequency for the microcontroller’s sleep mode, as well as your other circuitry that may require a timing reference. We can help you match the right crystal and you’ll have a reliable and accurate timing source. Micro Crystal has worked with TI to help you choose an ideal crystal for your circuit ap ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.