Ambiguity of the Peak Power Rating of TVS Devices
... Figure 4. Input to Ground Voltage and Power Dissipation Comparison for ESD1014 and a Competitor’s Product ...
... Figure 4. Input to Ground Voltage and Power Dissipation Comparison for ESD1014 and a Competitor’s Product ...
BLDC Motor Control - NXP Semiconductors
... Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright license granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th ...
... Information in this document is provided solely to enable system and software implementers to use Freescale Semiconductor products. There are no express or implied copyright license granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in th ...
(LHS), A Novel Organic NLO Material
... The HR- SEM analysis is very useful to inspect the nature and surface morphology of the grown crystal. Highly transparent region of the crystal was used for the surface analysis. The SEM images of LHS crystal taken in two different magnifications are provided in Fig. 4. Fig. 4a shows the existence o ...
... The HR- SEM analysis is very useful to inspect the nature and surface morphology of the grown crystal. Highly transparent region of the crystal was used for the surface analysis. The SEM images of LHS crystal taken in two different magnifications are provided in Fig. 4. Fig. 4a shows the existence o ...
AND8424 - Unidirectional versus Bidirectional Protection
... Protection products such as transient voltage suppressors (TVS) are often described as unidirectional and bidirectional. This terminology has often led to confusion. The most common misconception is that unidirectional devices only provide protection for positive or negative stresses, not both. This ...
... Protection products such as transient voltage suppressors (TVS) are often described as unidirectional and bidirectional. This terminology has often led to confusion. The most common misconception is that unidirectional devices only provide protection for positive or negative stresses, not both. This ...
PE613010 - Peregrine Semiconductor
... date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification: The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended ...
... date. Peregrine reserves the right to change specifications at any time without notice in order to supply the best possible product. Product Specification: The datasheet contains final data. In the event Peregrine decides to change the specifications, Peregrine will notify customers of the intended ...
active field distributors
... zone 2/22. It can integrate up to 4 PA (PROFIBUS PA) or FF (FOUNDATION Fieldbus H1) field devices via shortcircuit-proof spur line connections into a fieldbus segment (line/ring) with automatic bus termination. This fieldbus segment can be connected to a single or redundant PROFIBUS DP via a PA or F ...
... zone 2/22. It can integrate up to 4 PA (PROFIBUS PA) or FF (FOUNDATION Fieldbus H1) field devices via shortcircuit-proof spur line connections into a fieldbus segment (line/ring) with automatic bus termination. This fieldbus segment can be connected to a single or redundant PROFIBUS DP via a PA or F ...
Hour 1 Atoms to frequency with pictures
... the level of the voltage by selecting how many turns of wire are in each coil. This is called a transformer. DC, AC and Frequency The circumstance we have described so far is a very simplified concept of a circuit. We have two wires with a voltage across them, and are trying to take a close look at ...
... the level of the voltage by selecting how many turns of wire are in each coil. This is called a transformer. DC, AC and Frequency The circumstance we have described so far is a very simplified concept of a circuit. We have two wires with a voltage across them, and are trying to take a close look at ...
Ultra-Thin Silicon based Piezoelectric Capacitive Tactile Sensor
... high resolution, resistant to chemicals and durable to external force [5]. Over the past two and a half decades, the pursuit to meet above needs and improvements in tactile sensing capability has resulted in many kind of touch sensors, exploring numerous modes of transductions including piezoresisti ...
... high resolution, resistant to chemicals and durable to external force [5]. Over the past two and a half decades, the pursuit to meet above needs and improvements in tactile sensing capability has resulted in many kind of touch sensors, exploring numerous modes of transductions including piezoresisti ...
ZXCT1023EV1 User Guide Issue 1
... small value sense resistors necessary at higher currents. The wide input voltage range of 20V down to as low as 2.5V makes it suitable for a range of applications. It requires no additional components, thus making it a versatile device with minimal component count. The ZXCT1023 in the TDFN1218-4L pa ...
... small value sense resistors necessary at higher currents. The wide input voltage range of 20V down to as low as 2.5V makes it suitable for a range of applications. It requires no additional components, thus making it a versatile device with minimal component count. The ZXCT1023 in the TDFN1218-4L pa ...
R 1 - Lyle School of Engineering
... so that specific combinations of v1 and v2 produce 0.9 or 0.5 volts at the amplifier input v – Both input resistors x and y are made equal so the behavior of the device will be symmetrical with respect to the two input voltages – Small resistors produce an OR gate (one input alone can switch the out ...
... so that specific combinations of v1 and v2 produce 0.9 or 0.5 volts at the amplifier input v – Both input resistors x and y are made equal so the behavior of the device will be symmetrical with respect to the two input voltages – Small resistors produce an OR gate (one input alone can switch the out ...
elizabethtown community and technical
... 3. Why do static charges accumulate on insulator materials only? 4. What is an electroscope? 5. An electroscope has been charged with a negative charge. An object with an unknown charge is brought close to the electroscope. The leaves of the electroscope come closer together. Does the object have a ...
... 3. Why do static charges accumulate on insulator materials only? 4. What is an electroscope? 5. An electroscope has been charged with a negative charge. An object with an unknown charge is brought close to the electroscope. The leaves of the electroscope come closer together. Does the object have a ...
Quartz Crystal Microbalance with Dissipation (QCM
... structural properties of adsorbed molecular layers. Different materials can easily be compared and one can ascertain if the Sauerbrey relation will accurately approximate the adsorbed mass or not. Furthermore, the QCM-D technology allows quantitative analysis of the thickness, shear elastic modulus, ...
... structural properties of adsorbed molecular layers. Different materials can easily be compared and one can ascertain if the Sauerbrey relation will accurately approximate the adsorbed mass or not. Furthermore, the QCM-D technology allows quantitative analysis of the thickness, shear elastic modulus, ...
DAC, Diodes and Triacs
... • A diode is created when a p-type semiconductor is joined with and n-type semiconductor by the addition of thermal energy. • When both materials are joined, the thermal energy causes positive carriers in the p-type material to diffuse into the n-type region and negative carriers in the n-type mater ...
... • A diode is created when a p-type semiconductor is joined with and n-type semiconductor by the addition of thermal energy. • When both materials are joined, the thermal energy causes positive carriers in the p-type material to diffuse into the n-type region and negative carriers in the n-type mater ...
EMI4184 数据资料DataSheet下载
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
2SD2696
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
AN10361 Philips BISS loadswitch solutions and the SOT666 BISS loadswitch demo board
... The loadswitch circuit in Fig 1 consists of six components and uses bipolar transistors. If a positive voltage is applied to the base of the control transistor Tr2 through R1, it switches the pass transistor Tr1. A small base current of about a Milliampere switches up to a few Amperes. The voltage d ...
... The loadswitch circuit in Fig 1 consists of six components and uses bipolar transistors. If a positive voltage is applied to the base of the control transistor Tr2 through R1, it switches the pass transistor Tr1. A small base current of about a Milliampere switches up to a few Amperes. The voltage d ...
CIRCUIT FUNCTION AND BENEFITS
... use the "Circuits from the Lab" in the design of your product, no other license is granted by implication or otherwise under any patents or other intellectual property by application or use of the "Circuits from the Lab". Information furnished by Analog Devices is believed to be accurate and reliabl ...
... use the "Circuits from the Lab" in the design of your product, no other license is granted by implication or otherwise under any patents or other intellectual property by application or use of the "Circuits from the Lab". Information furnished by Analog Devices is believed to be accurate and reliabl ...
DATA SHEET BSR13; BSR14 NPN switching transistors Product specification
... designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indem ...
... designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indem ...
US6M2 - Rohm
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
... Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to applicati ...
GE Bushing Potential Device
... A limits established by NEMA No. SG-4 - 1990. Potential devices contain both capacitance and inductance as essential elements in their resonant circuit network. Therefore, if burdens with comparatively large non-linear reactive components are used, the circuit characteristics may be affected. Burden ...
... A limits established by NEMA No. SG-4 - 1990. Potential devices contain both capacitance and inductance as essential elements in their resonant circuit network. Therefore, if burdens with comparatively large non-linear reactive components are used, the circuit characteristics may be affected. Burden ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.