 
									
								
									GE Bushing Potential Device
									
... A limits established by NEMA No. SG-4 - 1990. Potential devices contain both capacitance and inductance as essential elements in their resonant circuit network. Therefore, if burdens with comparatively large non-linear reactive components are used, the circuit characteristics may be affected. Burden ...
                        	... A limits established by NEMA No. SG-4 - 1990. Potential devices contain both capacitance and inductance as essential elements in their resonant circuit network. Therefore, if burdens with comparatively large non-linear reactive components are used, the circuit characteristics may be affected. Burden ...
									EMI4183MU 数据资料DataSheet下载
									
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
                        	... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
									LIGHT EMITTING DIODES
									
... The most important part of a light emitting diode (LED) is the semiconductor chip located in the center of the bulb as shown at the right. The chip has two regions separated by a junction. The p region is dominated by positive electric charges, and the n region is dominated by negative electric char ...
                        	... The most important part of a light emitting diode (LED) is the semiconductor chip located in the center of the bulb as shown at the right. The chip has two regions separated by a junction. The p region is dominated by positive electric charges, and the n region is dominated by negative electric char ...
									2. Prediction of Crystal Structures
									
... hundred runs starting from different points. These starting points can be randomly chosen [2], systematically varied [11,12], or calculated previously [10]. A review on different methods and their use to predict possible crystal polymorphs is given by Verwer and Leusen [13]. The following method is ...
                        	... hundred runs starting from different points. These starting points can be randomly chosen [2], systematically varied [11,12], or calculated previously [10]. A review on different methods and their use to predict possible crystal polymorphs is given by Verwer and Leusen [13]. The following method is ...
									AN5082, MagniV in 24 V Applications
									
... Freescale S12 MagniV portfolio simplifies system design and reduces time to market with integrated mixed-signal microcontrollers (MCUs) for automotive and industrial applications. Offering single-die solutions, the S12 MagniV MCUs are complete system-in-package (SiP) solutions built on proven S12 te ...
                        	... Freescale S12 MagniV portfolio simplifies system design and reduces time to market with integrated mixed-signal microcontrollers (MCUs) for automotive and industrial applications. Offering single-die solutions, the S12 MagniV MCUs are complete system-in-package (SiP) solutions built on proven S12 te ...
									MPOD Local user guide (pdf)
									
... “_up” Scintillators 1& 2 up with appropriate voltage and current limits: RAMP speed 50V/s “_down” Scintillators 1& 2 down and switched OFF After powering up any detectors required the monitoring current limits can be set to safe levels by executing the command “./iLimit” In an emergency the crate ca ...
                        	... “_up” Scintillators 1& 2 up with appropriate voltage and current limits: RAMP speed 50V/s “_down” Scintillators 1& 2 down and switched OFF After powering up any detectors required the monitoring current limits can be set to safe levels by executing the command “./iLimit” In an emergency the crate ca ...
									implementation of multi-valued logic gates using full current
									
... and increases severely as the ouput current approaches the maximum output current given by eqn.(13). Moreover, the situation becomes worse with body-bias effect. The fact that Mk has to operate in saturation as current source puts forward larger (W/L)sw values. Hence, the output block area, which i ...
                        	... and increases severely as the ouput current approaches the maximum output current given by eqn.(13). Moreover, the situation becomes worse with body-bias effect. The fact that Mk has to operate in saturation as current source puts forward larger (W/L)sw values. Hence, the output block area, which i ...
									DATA  SHEET BCW60 series NPN general purpose transistors
									
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
                        	... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
									DATA  SHEET BFS20 NPN medium frequency transistor
									
... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
                        	... The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any lice ...
									File - WA Powers
									
... A LabVIEW simulation was run in order to see how an electrical signal flowed to four different LED lights. A bread board circuit was set up and using LabVIEW as a function control and also graphical output simulator, voltage was run through the system. Once the system reached a certain current, the ...
                        	... A LabVIEW simulation was run in order to see how an electrical signal flowed to four different LED lights. A bread board circuit was set up and using LabVIEW as a function control and also graphical output simulator, voltage was run through the system. Once the system reached a certain current, the ...
									NCP5183 - High Voltage High Current High and Low Side Driver
									
... The device featured two independent 4.3 A sink and source drivers. The low side driver (DRVL) supplies a MOSFET whose source is connected to ground. The driver is powered from VCC line. The high side driver (DRVH) supplies a MOSFET whose source is floating from GND to bulk voltage. The floating driv ...
                        	... The device featured two independent 4.3 A sink and source drivers. The low side driver (DRVL) supplies a MOSFET whose source is connected to ground. The driver is powered from VCC line. The high side driver (DRVH) supplies a MOSFET whose source is floating from GND to bulk voltage. The floating driv ...
									Inverter Checks
									
... The most common mode of failure will be an output transistor short between the collector to the emitter. This will be shown by low resistance readings in either direction. When changing an IGBT, change all components in the failed output phase. In some cases there may be two output transistors per p ...
                        	... The most common mode of failure will be an output transistor short between the collector to the emitter. This will be shown by low resistance readings in either direction. When changing an IGBT, change all components in the failed output phase. In some cases there may be two output transistors per p ...
									EMI2124 数据资料DataSheet下载
									
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
                        	... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doe ...
									FPD750 0.5W POWER pHEMT Features Product Description
									
... applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die, and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended, and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. ...
                        	... applied to the attachment surface uniformly and sparingly to avoid encroachment of epoxy on to the top face of the die, and ideally should not exceed half the chip height. For automated dispense Ablestick LMISR4 is recommended, and for manual dispense Ablestick 84-1 LMI or 84-1 LMIT are recommended. ...
									Power dissipation and its linear derating factor, silicon limited drain
									
... parameters that regard the SOA (safe operating area). As it is well kwown in literature, SOA is the area that includes all the ID-VDS operating points where the device works in safety conditions. These important parameters are studied in this technical article. In particular, attention will be focus ...
                        	... parameters that regard the SOA (safe operating area). As it is well kwown in literature, SOA is the area that includes all the ID-VDS operating points where the device works in safety conditions. These important parameters are studied in this technical article. In particular, attention will be focus ...
									Electronic devices and circuits
									
... Tools and techniques for LTI control system analysis and design: root loci, [[Routh-Hurwitz stability criterion]], Bode and [[Nyquist plot]]s. Control system compensators: elements of lead and lag compensation, elements of [[Proportional-Integral-Derivative controller]] (PID). Discretization of con ...
                        	... Tools and techniques for LTI control system analysis and design: root loci, [[Routh-Hurwitz stability criterion]], Bode and [[Nyquist plot]]s. Control system compensators: elements of lead and lag compensation, elements of [[Proportional-Integral-Derivative controller]] (PID). Discretization of con ...
									ZXCT1030 - Diodes Incorporated
									
... labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. C ...
                        	... labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. C ...
									Slide 1
									
... SEMICONDUCTOR (Ga-As) LASERS Introduction : The semiconductor laser is today one of the most important types of lasers with its very important application in fiber optic communication. These lasers use semiconductors as the lasing medium and are characterized by specific advantages such as the capa ...
                        	... SEMICONDUCTOR (Ga-As) LASERS Introduction : The semiconductor laser is today one of the most important types of lasers with its very important application in fiber optic communication. These lasers use semiconductors as the lasing medium and are characterized by specific advantages such as the capa ...
									VLSI Digital System Design
									
... 1.Deposit solder ball on I-O pad 2.Heat die and board to reflow solder 3.Solder surface tension positions die on board ...
                        	... 1.Deposit solder ball on I-O pad 2.Heat die and board to reflow solder 3.Solder surface tension positions die on board ...
									FDD6680AS 30V N-Channel PowerTrench SyncFET
									
... (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
                        	... (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									