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Introduction to Fundamental Crystal Oscillators
Introduction to Fundamental Crystal Oscillators

... With overtone operation of crystals, the overtone frequency is not an exact multiple of the fundamental frequency and the circuit design must ensure that the crystal does in fact operate at the overtone frequency. In order to be certain of correct operation, it is preferable to specify series resona ...
Experiment
Experiment

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28 NA • iEEE SpEctrum • dEcEmbEr 2008 Authorized licensed use

... about 10 years, I was given carte blanche to pursue any topic we wanted. We decided to take on Moore’s Law. At the time, the dot-com bubble was still rapidly inflating its way toward a resounding pop, and the existing semiconductor road map didn’t extend past 2010. The critical feature size for the ...
UM3222E,UM3232E High ESD-Protected, Low Power, 3.3V to 5.5V
UM3222E,UM3232E High ESD-Protected, Low Power, 3.3V to 5.5V

... The receivers convert RS-232 signals to CMOS-logic output levels. The UM3222E receivers have inverting three-state outputs. Drive /EN high to place the receiver(s) into a high impedance state. Receivers can be either active or inactive in shutdown. ...
TGS2313 数据资料DataSheet下载
TGS2313 数据资料DataSheet下载

... Organic attachment can be used in low-power applications. Curing should be done in a convection oven; proper exhaust is a safety concern. Microwave or radiant curing should not be used because of differential heating. Coefficient of thermal expansion matching is critical. ...
LH0004 LH0004C High Voltage Operational
LH0004 LH0004C High Voltage Operational

... Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any time and to discontinue any product or service without notice. Customers should obtain the latest relevant ...
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Presentation: Comparison of Strategies for Redundancy to

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1/f noise - Cypress Semiconductor

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DFM400XXM45-TS001 - Dynex Semiconductor

... Due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application. The user must evaluate the suitability of the product and the completeness of the product data f ...
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AL8400 /AL8400Q Description Applications Pin Assignments

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FST3125 — 4-Bit Bus Switch FST3125 — 4- B it

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MOSFET Failure Modes in the Zero-Voltage-Switched Full

... A new “L” series MOSFET family with low onresistance, fast recovery body diode and more ruggedness has been studied with the phase-shifted full-bridge ZVS converter. The low on-resistance reduces the conduction loss so that the device will work at a lower junction temperature or reduce the number of ...
Inventor - Hobbielektronika
Inventor - Hobbielektronika

... A general object of the present invention is to provide a snubber circuit which can provide two levels of current flow respectively well suited to control ringing and turn on. SUMMARY OF THE INVENTION In fulfillment of the foregoing object and in accordance with the present invention, a snubber circ ...
Fast-switching all-printed organic electrochemical transistors Linköping University Post Print
Fast-switching all-printed organic electrochemical transistors Linköping University Post Print

... and drain electrodes, the transistor channel and the gate electrode all are based on PEDOT:PSS. A layer of electrolyte represents the ionic connection between the transistor channel and the gate electrode. The lateral transistor structure enables manufacturing using only two printing steps in which ...
Amplifier Transistors
Amplifier Transistors

... suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters whi ...
RFMD Datasheet Template
RFMD Datasheet Template

... Recommended operating range. ...
TIDA-00009 Test Results
TIDA-00009 Test Results

... TI assumes no liability for applications assistance or the design of Buyers’ products. Buyers are responsible for their products and applications using TI components. To minimize the risks associated with Buyers’ products and applications, Buyers should provide adequate design and operating safeguar ...
Electron Guns
Electron Guns

... Field emission = very high current density ~105 A/cm2 (recall ~3 A/cm2 for W thermionic cathodes) Very small emission region (~ 10nm) So brightness = 100s of times greater than thermionic emission at the same voltage ...
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problem grade total 1 2 3 4

... or why not? If ”Yes”, is it too big or too small? (Appropriate explanation expected). ...
DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM
DATASHEET SEARCH SITE | WWW.ALLDATASHEET.COM

... input, complementary TTL output voltage comparator with improved characteristics over the SE529/NE529 for which it is a pin-for-pin replacement. The device has been optimized for greater speed performance and lower input offset voltage. Typically delay varies only 3 ns for over-drive variations of 5 ...
Active Pixel Sensors Fabricated in a Standard 0.18 um CMOS
Active Pixel Sensors Fabricated in a Standard 0.18 um CMOS

... current – even comparable to photocurrents under normal lighting conditions. For a photogate APS the effect of gate current can be even more pronounced, since the photogate area is quite large. One way to mitigate the transistor gate leakage problem is to design all image sensor circuits using the 3. ...
EMI in the Workplace Environment
EMI in the Workplace Environment

... (ICDs), has, in most cases, enabled these medical devices to be immune to external electromagnetic interference (EMI). Most of the common home and workplace items that can generate EMI typically do not interfere with normal operation of implantable medical devices. There are instances where equipmen ...
Flash Core Voltage Supply
Flash Core Voltage Supply

... The only issue with diodes is that they do not protect against nanosecond events that may include some voltage spikes; however, it may be good practice to include these into hardware designs. A suppression diode operates in a similar manner to a Zener diode. Suppression diodes have a higher current- ...
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Gabrielli

SQUID - Superconducting Quantum Interference Devices
SQUID - Superconducting Quantum Interference Devices

... superconductor state: Their resistance jumps zero.  Their magnetic behavior changes. ...
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Semiconductor device



Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
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