 
									
								
									Current Source Biasing
									
... simultaneously with the same device parameters (parameters from chip to chip will vary) • As a result, different bias techniques are employed than in discrete designs • One common technique is current source biasing, which allows the designer to take advantage of matched devices • We will begin by l ...
                        	... simultaneously with the same device parameters (parameters from chip to chip will vary) • As a result, different bias techniques are employed than in discrete designs • One common technique is current source biasing, which allows the designer to take advantage of matched devices • We will begin by l ...
									218KB - NZQA
									
... magnetised and attracts the moving arm. (ii) As the moving arm is pulled away from the contact screw, the hammer strikes the bell, and the circuit is incomplete. And the current flow stops. (iii) The soft iron core is no longer magnetised, and so the moving arm is pulled back to its original positio ...
                        	... magnetised and attracts the moving arm. (ii) As the moving arm is pulled away from the contact screw, the hammer strikes the bell, and the circuit is incomplete. And the current flow stops. (iii) The soft iron core is no longer magnetised, and so the moving arm is pulled back to its original positio ...
									IGBT (Insulated Gate Bipolar Transistor) 1 Differences Between
									
... these applications the adaptation of a (freewheeling) diode is essential, because after switching off the IGBT the current is driven on by the load, which is inductive in most cases. By attaching suitable diodes, this current flow is enabled. When the IGBT is turned on again, the current flown diode ...
                        	... these applications the adaptation of a (freewheeling) diode is essential, because after switching off the IGBT the current is driven on by the load, which is inductive in most cases. By attaching suitable diodes, this current flow is enabled. When the IGBT is turned on again, the current flown diode ...
									AP3171 N E W P R O D U C T Description Features Pin
									
... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
                        	... indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more U ...
									TRANSISTOR SWITCHING - University of Michigan
									
... shown. When the transistor is turned ON the diode blocks current flow through the added branch and the turn-on operation is as described before. On turn-off however the inductive voltage generated increases the collector voltage to the point where the diode is turned ON and what was collector curren ...
                        	... shown. When the transistor is turned ON the diode blocks current flow through the added branch and the turn-on operation is as described before. On turn-off however the inductive voltage generated increases the collector voltage to the point where the diode is turned ON and what was collector curren ...
									NCT65 - Remote Trip Point Temperature Sensor with
									
... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
                        	... ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/ ...
									Elec17 Appendix
									
... infinite resistance is represented by OL" on the display. With this much resistance, no current can move through. Usually, this indicates that the circuit is broken with no complete path for current flow. Input − Generally used to refer to data or sensor information given which is received by an EC ...
                        	... infinite resistance is represented by OL" on the display. With this much resistance, no current can move through. Usually, this indicates that the circuit is broken with no complete path for current flow. Input − Generally used to refer to data or sensor information given which is received by an EC ...
									NCP1422LEDGEVB NCP1422 High Current LED Driver Evaluation Board User's Manual
									
... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
                        	... are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marki ...
									2SD1834
									
... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
                        	... The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose of introducing ROHM's products (hereinafter "Products"). If you wish to use any such Product, please be sure to refer to the specifications, which can be obtained from RO ...
									Understanding Basic Analog Passive Devices
									
... some point in a circuit. When tolerances stack up or when the specifications for a component can not be predicted accurately, pots are used to adjust out the tolerances. This adjustment enables the designer to obtain the correct circuit parameter regardless of tolerances. The overuse of potentiomete ...
                        	... some point in a circuit. When tolerances stack up or when the specifications for a component can not be predicted accurately, pots are used to adjust out the tolerances. This adjustment enables the designer to obtain the correct circuit parameter regardless of tolerances. The overuse of potentiomete ...
									Comparison of advantages and disadvantages of electronic
									
... voltage (SCR 2), TRIAC 3), GTO 4)-thyristors, MOSFET 5), IGBT 6)) or a current bipolartransistor. Fig. 6 shows a typical TRIAC-curve. A TRIAC is high-resistance in both polarities until the respective igniting voltage is reached and will suddenly become low-resistance until the polarity changes agai ...
                        	... voltage (SCR 2), TRIAC 3), GTO 4)-thyristors, MOSFET 5), IGBT 6)) or a current bipolartransistor. Fig. 6 shows a typical TRIAC-curve. A TRIAC is high-resistance in both polarities until the respective igniting voltage is reached and will suddenly become low-resistance until the polarity changes agai ...
									Application Note AN-940
									
... This is equivalent to a “make before break” set of contacts and there is a finite amount of charge that is lost at each switching operation. The inverter building block of the C-MOS logic family is easily recognizable in this circuit configuration. A source follower totem pole is shown in Figure 6. ...
                        	... This is equivalent to a “make before break” set of contacts and there is a finite amount of charge that is lost at each switching operation. The inverter building block of the C-MOS logic family is easily recognizable in this circuit configuration. A source follower totem pole is shown in Figure 6. ...
									Optically addressable field effect nano- environments for chemical imaging
									
... Light addressable interrogation of field effect chemical sensing devices, such as in the scanning light pulse technique (SLPT[1]) offer a versatile platform for the study of sensing mechanisms and the generation of high resolution chemical images, which are an alternative to collections of discrete ...
                        	... Light addressable interrogation of field effect chemical sensing devices, such as in the scanning light pulse technique (SLPT[1]) offer a versatile platform for the study of sensing mechanisms and the generation of high resolution chemical images, which are an alternative to collections of discrete ...
									AND9129 - Understanding a Digital Transisotr Datasheet
									
... is desired to be OFF. The design requirements also state that the maximum output voltage of the micro controller is 4.2 V. A Digital Transistor needs to be selected that can provide a maximum IC of 20 mA when the input voltage is 4.2 V. It also has to provide an IC of 10 mA with an input voltage of ...
                        	... is desired to be OFF. The design requirements also state that the maximum output voltage of the micro controller is 4.2 V. A Digital Transistor needs to be selected that can provide a maximum IC of 20 mA when the input voltage is 4.2 V. It also has to provide an IC of 10 mA with an input voltage of ...
									Structural basis for bending of organic crystals{
									
... wherein the packing patterns are similar in three dimensions, will often have highly cross-linked structures (naphthalene, benzoic acid, D-glucose). These crystals would break rather than bend when subjected to a mechanical stress. In contrast, metals, which are isotropic but do not have cross-linki ...
                        	... wherein the packing patterns are similar in three dimensions, will often have highly cross-linked structures (naphthalene, benzoic acid, D-glucose). These crystals would break rather than bend when subjected to a mechanical stress. In contrast, metals, which are isotropic but do not have cross-linki ...
									Evaluates:  MAX1698 MAX1698 Evaluation Kit General Description Features
									
... and tested circuit board that contains a boost switching-regulator current source and array of white LEDs. As configured, the circuit is set up to drive 3 banks of 3 series LED arrays at 20mA each; however, a wide variety of other configurations are possible. The IC can be powered from a separate +2 ...
                        	... and tested circuit board that contains a boost switching-regulator current source and array of white LEDs. As configured, the circuit is set up to drive 3 banks of 3 series LED arrays at 20mA each; however, a wide variety of other configurations are possible. The IC can be powered from a separate +2 ...
Semiconductor device
Semiconductor devices are electronic components that exploit the electronic properties of semiconductor materials, principally silicon, germanium, and gallium arsenide, as well as organic semiconductors. Semiconductor devices have replaced thermionic devices (vacuum tubes) in most applications. They use electronic conduction in the solid state as opposed to the gaseous state or thermionic emission in a high vacuum.Semiconductor devices are manufactured both as single discrete devices and as integrated circuits (ICs), which consist of a number—from a few (as low as two) to billions—of devices manufactured and interconnected on a single semiconductor substrate, or wafer.Semiconductor materials are useful because their behavior can be easily manipulated by the addition of impurities, known as doping. Semiconductor conductivity can be controlled by introduction of an electric or magnetic field, by exposure to light or heat, or by mechanical deformation of a doped monocrystalline grid; thus, semiconductors can make excellent sensors. Current conduction in a semiconductor occurs via mobile or ""free"" electrons and holes, collectively known as charge carriers. Doping a semiconductor such as silicon with a small amount of impurity atoms, such as phosphorus or boron, greatly increases the number of free electrons or holes within the semiconductor. When a doped semiconductor contains excess holes it is called ""p-type"", and when it contains excess free electrons it is known as ""n-type"", where p (positive for holes) or n (negative for electrons) is the sign of the charge of the majority mobile charge carriers. The semiconductor material used in devices is doped under highly controlled conditions in a fabrication facility, or fab, to control precisely the location and concentration of p- and n-type dopants. The junctions which form where n-type and p-type semiconductors join together are called p–n junctions.
 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									 
									